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HER301 MPX100AS RB151 A1103EUA D2150 MAX3455E 128MP AOI478
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  vdss Datasheet PDF File

For vdss Found Datasheets File :: 18484    Search Time::1.422ms    
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    ARF521

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ADPOW
Advanced Power Technology
Part No. ARF521
OCR Text ... = 50% MAXIMUM RATINGS Symbol vdss ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Gate-Source Voltage Total Device Dissipation @ TC = 25C Operating and Storage Junction Temperature Range Lead Tempe...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFETs

File Size 177.15K  /  4 Page

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    IXFC96N15P

IXYS Corporation
Part No. IXFC96N15P
OCR Text vdss = 150 V ID25 = 42 A RDS(on) = 26 m < 200 ns trr N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated ISOPLUS 220TM E153432 Symbol vdss VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC VISOL Weight 1.6 mm (0...
Description PolarHT HiPerFET Power MOSFET ISOPLUS220

File Size 114.23K  /  5 Page

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    IXFR21N100Q

IXYS Corporation
Part No. IXFR21N100Q
OCR Text ...y data sheet IXFR 21N100Q vdss ID25 RDS(on) = 1000 V = 19 A = 0.50 W trr 250 ns Symbol vdss VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions T J = 25C to 150C T J = 25C to 1...
Description HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface)

File Size 34.15K  /  2 Page

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Part No. 2SK3567
OCR Text ...est circuit wave form i ar b vdss v dd v ds r g = 25 ? v dd = 90 v, l = 28.8mh ? ? ? ? ? ? ? ? ? ? ? ? = v dd b vdss b vdss 2 i l 2 1 as drain-source voltage v ds (v) safe operating area single nonrepetit...
Description 3.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 222.92K  /  6 Page

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    TK9A60D

Toshiba Semiconductor
Part No. TK9A60D
OCR Text ... ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1 as test circuit waveform i ar b vdss v dd v ds ? 15 v 15 v e as ? t ch channel temperature (initial) t ch (c) avalanche energy e as (mj) r th ? t w pu...
Description Field Effect Transistor
Power MOSFET (N-ch 500V<vdss≤700V)

File Size 185.87K  /  6 Page

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    TOSHIBA
Part No. TK9A45D
OCR Text ...test circuit waveform i ar b vdss v dd v ds drain-source voltage v ds (v) safe operating area drain current i d (a) 0.01 1 0.1 10 100 10 1000 100 100 s * 1 ms * v dss max 0.001 1 *: single nonrepetitive p...
Description Power MOSFET (N-ch 250V<vdss≤500V)

File Size 207.53K  /  6 Page

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    IRF2804S-7P

IRF[International Rectifier]
Part No. IRF2804S-7P
OCR Text ...valanche Allowed up to Tjmax vdss = 40V G S RDS(on) = 1.6m ID = 160A Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on...
Description AUTOMOTIVE MOSFET

File Size 260.32K  /  10 Page

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    IRF2804 IRF2804L IRF2804S

IRF[International Rectifier]
Part No. IRF2804 IRF2804L IRF2804S
OCR Text ...valanche Allowed up to Tjmax vdss = 40V RDS(on) = 2.0m G S Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance...
Description 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 273.77K  /  12 Page

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    IXYS[IXYS Corporation]
Part No. IXFR44N80P
OCR Text ...trinsic Diode IXFR 44N80P vdss ID25 RDS(on) trr = 800 V = 25 A 190 m ns 250 Symbol vdss VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C...
Description PolarHV HiPerFET Power MOSFET

File Size 96.42K  /  4 Page

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    TK20J60U-F

Toshiba Semiconductor
Part No. TK20J60U-F
OCR Text ...est circuit waveform i ar b vdss v dd v ds r g = 25 v dd = 90 v, l = 1.12 mh ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1 as avalanche energy e as (mj) channel temperature (initial) t ch (c) e as ? t c...
Description Switching Regulator Applications

File Size 248.17K  /  6 Page

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