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  vdgr Datasheet PDF File

For vdgr Found Datasheets File :: 5153    Search Time::1.218ms    
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    ITF86172SK8T

INTERSIL[Intersil Corporation]
Part No. ITF86172SK8T
OCR Text .... . . . . . . . . . . . . . . . vdgr -30 V SemiGate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS 20 V conduc- Drain Current tor, NContinuous (TA= 25oC, VGS = 10V) ...
Description 10A/ 30V/ 0.016 Ohm/ P-Channel/ Logic Level/ Power MOSFET
10A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET
10A 30V 0.016 Ohm P-Channel Logic Level Power MOSFET

File Size 173.61K  /  12 Page

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    ITF86182SK8T

INTERSIL[Intersil Corporation]
Part No. ITF86182SK8T
OCR Text .... . . . . . . . . . . . . . . . vdgr -30 V conduc- Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS 20 V tor, PDrain Current Continuous (TA= 25oC, VGS =...
Description 11A/ 30V/ 0.0115 Ohm/ P-Channel/ Logic Level/ Power MOSFET
11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET

File Size 172.94K  /  12 Page

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    IXTQ64N25 IXTQ64N25P IXTT64N25P

IXYS[IXYS Corporation]
Part No. IXTQ64N25 IXTQ64N25P IXTT64N25P
OCR Text ...V = 64 A = 48 m Symbol VDSS vdgr VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Maximum Ratings 250 250 20 V V V A A A mJ J V/ns W C C C C TO-3P (IXTQ) ...
Description Discrete MOSFETs: Standard N-channel Types
PolarHT Power MOSFET

File Size 573.67K  /  5 Page

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    RFP70N03 RF1S70N03 RF1S70N03SM

FAIRCHILD[Fairchild Semiconductor]
Part No. RFP70N03 RF1S70N03 RF1S70N03SM
OCR Text .... . . . . . . . . . . . . . . . vdgr Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Continuous Drain Current RMS Continuous. . . . . . . . . . . . . . . . . ...
Description 70A/ 30V/ Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

File Size 588.19K  /  6 Page

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    RFP70N06 RFG70N06 RF1S70N06 RF1S70N06SM

FAIRCHILD[Fairchild Semiconductor]
Part No. RFP70N06 RFG70N06 RF1S70N06 RF1S70N06SM
OCR Text .... . . . . . . . . . . . . . . . vdgr Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description 70A/ 60V/ Avalanche Rated/ N-Channel Enhancement-Mode Power MOSFETs
70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs

File Size 90.34K  /  6 Page

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    TPC8102

TOSHIBA[Toshiba Semiconductor]
Part No. TPC8102
OCR Text ...t = 10 s) (Note 2b) Symbol VDSS vdgr VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating -30 -30 20 -6 -24 2.4 1.0 47 -6 0.24 150 -55 to 150 Unit V V V A W W mJ A mJ C C JEDEC JEITA TOSHIBA 2-6J1B Drain power dissipation Drain power di...
Description TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (MOSVI)

File Size 469.72K  /  7 Page

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    TPC8106-H

TOSHIBA[Toshiba Semiconductor]
Part No. TPC8106-H
OCR Text ...t = 10 s) (Note 2b) Symbol VDSS vdgr VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating -30 -30 20 -10 -40 2.4 1.0 130 -10 0.24 150 -55 to 150 Unit V V V A W W mJ A mJ C C JEDEC JEITA TOSHIBA 2-6J1B Weight: 0.080 g (typ.) Drain pow...
Description SILICON P CHANNEL MOS TYPE

File Size 510.73K  /  7 Page

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    TPC8107

TOSHIBA[Toshiba Semiconductor]
Part No. TPC8107
OCR Text ...e temperature range Symbol VDSS vdgr VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating -30 -30 20 -13 -52 1.9 Unit V V V A JEDEC JEITA TOSHIBA 2-6J1B Drain power dissipation W 1.0 W Weight: 0.080 g (typ.) 219 -13 0.19 ...
Description Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)

File Size 215.18K  /  7 Page

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    TPC8108

TOSHIBA[Toshiba Semiconductor]
Part No. TPC8108
OCR Text ...e temperature range Symbol VDSS vdgr VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating -30 -30 20 -11 -44 1.9 Unit V V V A JEDEC JEITA TOSHIBA 2-6J1B Drain power dissipation W 1.0 W Weight: 0.080 g (typ.) 157 -11 0.19 ...
Description Silicon P Channel MOS Type (U-MOSIII)

File Size 340.81K  /  7 Page

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    BSS138-7 BSS138

DIODES[Diodes Incorporated]
Part No. BSS138-7 BSS138
OCR Text ...otherwise specified Symbol VDSS vdgr Continuous Continuous VGSS ID Pd RqJA Tj, TSTG BSS138 50 50 20 200 300 417 -55 to +150 Units V V V mA mW C/W C Characteristic Drain-Gate Voltage RGS 20KW Gate-Source Voltage Drain Current Power Di...
Description    N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 90.17K  /  5 Page

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For vdgr Found Datasheets File :: 5153    Search Time::1.218ms    
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