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v 500v Datasheet PDF File

For v 500v Found Datasheets File :: 7878 Search Time::1.469ms
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				International Rectifier
Part No.	IRGP450U
OCR Text	...for current vs. frequency curve v ces = 500v v ce(sat) 3.2v @v ge = 15v, i c = 33a e c g n - c h a n n e l description insulated gate bipolar transistors (igbts) from international rectifier have higher usable current densities than ...
Description	500v Discrete IGBT in a TO-3P (TO-247AC) package
File Size	105.66K / 6 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRGP450UD2
OCR Text	...r 5khz) e g n - c h a n n e l c v ces = 500v v ce(sat) 3.2v @v ge = 15v, i c = 33a parameter min. typ. max. units r q jc junction-to-case - igbt ? ? 0.64 r q jc junction-to-case - diode ? ? 0.83 c/w r q cs case-to-sink...
Description	500v Copack IGBT in a TO-3P (TO-247AC) package
File Size	40.39K / 2 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRGP440U
OCR Text	...for current vs. frequency curve v ces = 500v v ce(sat) 3.0v @v ge = 15v, i c = 22a e c g n-channel description insulated gate bipolar transistors (igbts) from international rectifier have higher usable current densities than comparab...
Description	500v Discrete IGBT in a TO-3P (TO-247AC) package
File Size	107.10K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRGP430U
OCR Text	...for current vs. frequency curve v ces = 500v v ce(sat) 3.0v @v ge = 15v, i c = 15a e c g n-channel description insulated gate bipolar transistors (igbts) from international rectifier have higher usable current densities than comparab...
Description	Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体绝缘门双极晶体管（IGBTs）（超快速绝缘栅型双极型晶体管） 500v Discrete IGBT in a TO-3P (TO-247AC) package
File Size	107.90K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRGP430UD2
OCR Text	... curve e g n - c h a n n e l c v ces = 500v v ce(sat) 3.0v @v ge = 15v, i c = 15a parameter min. typ. max. units r q jc junction-to-case - igbt ? ? 1.2 r q jc junction-to-case - diode ? ? 2.5 c/w r q cs case-to-sink, ...
Description	500v Copack IGBT in a TO-3P (TO-247AC) package
File Size	206.83K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRGP420U GP420U
OCR Text	...for current vs. frequency curve v ces = 500v v ce(sat) 3.0v @v ge = 15v, i c = 7.5a e c g n-channel description insulated gate bipolar transistors (igbts) from international rectifier have higher usable current densities than compara...
Description	Insulated Gate Bipolar Transistors (IGBTs)(瓒?揩???缂?????????朵?绠? 500v Discrete IGBT in a TO-3P (TO-247AC) package Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体绝缘门双极晶体管（IGBTs）（超快速绝缘栅型双极型晶体管）
File Size	108.14K / 7 Page	View it Online	Download Datasheet

				ShenZhen FreesCale Electronics. Co., Ltd
Part No.	AOK22N50
OCR Text	v ds i d (at v gs =10v) 22a r ds(on) (at v gs =10v) < 0.26 w symbol the aok22n50 is fabricated using an advanced high voltage mosfe...500v, v gs =0v m a bv dss v gs =10v, i d =11a reverse transfer capacitance v gs =0v, v ds =25v, f=1m...
Description	500v,22A N-Channel MOSFET
File Size	482.49K / 5 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT10035JFLL_03 APT10035JFLL APT10035JFLL03
OCR Text	...HARACTERISTICS UNIT Amps volts v/ns ns 25 100 1.3 18 Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN (Body Diode) (vGS ...500v TJ =+150C TJ =+25C 10 8 vDS=800v 4 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC)...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	90.44K / 5 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT10035JLL_03 APT10035JLL APT10035JLL03
OCR Text	...eak Diode Recovery dv/ dt 5 v/ns THERMAL CHARACTERISTICS Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP ...500v TJ =+150C TJ =+25C 10 8 vDS=800v 4 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC)...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	89.74K / 5 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology]
Part No.	APT10035LFLL APT10035B2FLL APT10035B2FLL_03 APT10035B2FLL03
OCR Text	...HARACTERISTICS UNIT Amps volts v/ns ns 28 112 1.3 18 Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN (Body Diode) (vGS ...500v TJ =+150C TJ =+25C 10 8 vDS=800v 4 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC)...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	88.90K / 5 Page	View it Online	Download Datasheet

For v 500v Found Datasheets File :: 7878 Search Time::1.469ms
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