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ST Microelectronics STMicroelectronics N.V. 意法半导
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| Part No. |
M29F200T-55M1R M29F200T-55M3R M29F200T-55N1R M29F200T-55N3R M29F200T-55N6R M29F200T-55M6R M295V200B-120M6R M295V200B-120N6R M295V200T-120N6R M295V200T-120M6R M29F200B-120N6R M29F200B-120M6R M29F200T-120M6R M29F200T-120N6R M29F200B-120N3TR M295V200B-120N3TR M29F200T-120M3TR M295V200T-120M3TR M295V200B-120M3TR M29F200B-120M3TR M295V200T-120N3TR M29F200T-120N3R M295V200T-120M3R M295V200T-120N3R M295V200T-55M3R M295V200T-55N3R M295V200T-70M3R M295V200T-70N3R M29F200T-120M3R M295V200T-90M3R M295V200T-90N3R M295V200B-70N1R M295V200B-70M1R M295V200B-55N6R M295V200T-55N6R M295V200T-90N6TR M295V200T-55N6TR M295V200T-120N6TR M295V200T-70N6TR M29F200T-90N6TR M29F200T-90M6TR M295V200B-120M1R M295V200B-120M1TR M295V200B-120M3R M295V200B-55M1R M295V200B-55M1TR M29F200B-90M3TR M29F200B-70M3TR M29F200B-55M3TR M29F200B-55M3R M29F200T-120M1R M29F200B-90M1R M29F200B-70M1R M29F200T-120N1R M295V200T-70M1R M29F200T-120N6TR M29F200T-55N6TR M29F200T-55N1TR M295V200B-90M3R M295V200B-90M3TR M295V200B-90N3TR M295V200B-55N3R M29F200B-55M6TR M295V200B-70N3TR M295V200T-70N3TR M29F200T-120N3TR M295V200T-55M1TR M295V200B-70M3TR M29F200B-90N6R M29F200T-70M6R M295V200T-90M6TR M295V200T-90M6R M295V200B-120N3R M295V2
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| OCR Text |
...ulti-block protection/temporary unprotection modes erase suspend and resume modes read and program another block during erase suspend low power consumption stand-by and automatic stand-by 100,000 program/erase cycles per block 20 years da... |
| Description |
Single SVS For 3.3V Systems W/Programmable Time Delay 8-PDIP -40 to 125 2兆位56Kb x828KB的x16插槽,启动座单电源闪 Adjustable Single SVS W/Programmable Time Delay 8-PDIP -40 to 125 2兆位56Kb x828KB的x16插槽,启动座单电源闪 2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory Single 2-Input Positive-NOR Gate 5-SOT-23 -40 to 85 2兆位56Kb x828KB的x16插槽,启动座单电源闪 Single 2-Input Positive-OR Gate 5-SOT-23 -40 to 85 2兆位56Kb x828KB的x16插槽,启动座单电源闪 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory 2兆位256Kb x828KB的x16插槽,启动座单电源闪 Single 2-Input Positive-NOR Gate 5-SOT -40 to 85 2兆位56Kb x828KB的x16插槽,启动座单电源闪 Single Inverter Buffer/Driver with Open-Drain Output 5-SOT-23 -40 to 85 2兆位56Kb x828KB的x16插槽,启动座单电源闪 CONNECTOR ACCESSORY 连接器附 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory 2兆位56Kb x828KB的x16插槽,启动座单电源闪 Single Positive-Edge-Triggered D-Type Flip-Flop with Clear and Preset 8-US8 -40 to 85 Single Positive-Edge-Triggered D-Type Flip-Flop 5-SOT-23 -40 to 85 Micropower Supply Voltage Supervisor 8-TSSOP Adjustable Single SVS W/Programmable Time Delay 8-PDIP -40 to 85 Adjustable Single SVS W/Programmable Time Delay 8-TSSOP -40 to 85 Single SVS For 3.3V Systems W/Programmable Time Delay 8-TSSOP Single SVS For 3.3V Systems W/Programmable Time Delay 8-SOIC -40 to 85 Micropower Supply Voltage Supervisor 8-PDIP -40 to 85 Single Power SVS (5v) W/Pgmmable Time Delay & Push-Pull Outputs 8-CDIP -55 to 125 16-Bit Edge-Triggered D-Type Flip-Flop With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 Single 2-Input Positive-NAND Gate 5-SC70 -40 to 85 8-Bit, 0.1 us Dual MDAC, Parallel Input, Fast Control Signalling for DSP 20-SOIC 0 to 70 8-Bit, 0.1 us Dual MDAC, Parallel Input, Fast Control Signalling for DSP, Easy Micro I/F 20-PDIP -25 to 85
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| File Size |
232.32K /
33 Page |
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Eon Silicon Solution
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| Part No. |
EN29LV512
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| OCR Text |
...orted - sector protection and unprotection: hardware locking of sectors to prevent program or erase operations within individual sectors ? high performance program/erase speed - byte program time: 8s typical - sector erase ... |
| Description |
512 Kbit (64K x 8-bit ) Uniform Sector
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| File Size |
466.28K /
35 Page |
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STMicroelectronics N.V. ST Microelectronics 意法半导
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| Part No. |
M29F400T-55M1R M29F400T-55M3R M29F400T-55N1R M29F400T-55N6R M29F400T-55N3R M295V400T-120M3R M295V400T-120N3R M295V400T-55M3R M295V400T-70M3R M295V400T-70N3R M295V400T-90M3R M295V400T-90N3R M295V400T-55N3R M295V400B-70M1R M29F400B M295V400B-70M3R M295V400B-70M3TR M295V400B-70M6TR M295V400B-70M6R M295V400T-120N6TR M295V400T-55N6TR M295V400B-120M3R M295V400B-120M1TR M295V400B-120M1R M29F400B-120M6TR M295V400B-120N6R M29F400B-55M3TR M29F400B-55M1R M29F400B-55N3R M295V400T-70N6TR M295V400B-55M1R M295V400T-70M1R M295V400T-90N1R M295V400T-120M1R M295V400T-55N1TR M295V400T-55N6R M29F400B-90M3TR M29F400B-90M3R M295V400B-90M3TR M295V400T-120N3TR M295V400T-70M3TR M295V400T-90N3TR M295V400B-55N1R M295V400B-90M1R M295V400B-120M6R M29F400B-90M6TR M29F400B-70N1TR M29F400B-90N6TR M295V400B-90N6R M295V400T-70M6TR M295V400B-55N1TR M29F400T-90N6TR M29F400T-120N3R M295V400B-120N3R -M29F400T-55M3TR -M29F400T-55M3R -M295V400T-90N6R -M295V400T-90N6TR -M295V400T-70M1TR -M295V400B-90M1R -M295V400B-55N1R -M295V400B-55N3R -M295V400B-55N6TR -M295V400B-55N6R M29F400B-70M6R
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| OCR Text |
...ulti-block protection/temporary unprotection modes erase suspend and resume modes read and program another block during erase suspend low power consumption stand-by and automatic stand-by 100,000 program/erase cycles per block 20 years da... |
| Description |
Replaced by THS1030 : 10-Bit, 20 MSPS ADC Single Ch., PowerDown/Standby Mode, Low Power 28-SOIC -40 to 85 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory 4兆位512KB的x8256Kb的x16插槽,启动座单电源闪 Excalibur High-Speed Low-Power Precision Operational Amplifier 8-SOIC 4兆位512KB的x856Kb的x16插槽,启动座单电源闪 Precision Low-Power Single Supply Operational Amplifier 8-SOIC -40 to 85 4兆位512KB的x856Kb的x16插槽,启动座单电源闪 Replaced by THS1030 : 10-Bit, 20 MSPS ADC Single Ch., PowerDown/Standby Mode, Low Power 28-SSOP -40 to 85 4兆位512KB的x856Kb的x16插槽,启动座单电源闪 Precision Low-Power Single Supply Operational Amplifier 8-PDIP -40 to 85 4兆位512KB的x856Kb的x16插槽,启动座单电源闪 High-Speed, Low-Power, Precision Dual Operational Amplifier 20-LCCC -55 to 125 4兆位512KB的x856Kb的x16插槽,启动座单电源闪 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory 4兆位512KB的x856Kb的x16插槽,启动座单电源闪 Quad Precision Low-Power Single Supply Operational Amplifier 14-PDIP 4兆位512KB的x856Kb的x16插槽,启动座单电源闪 High-Speed, Low-Power, Precision Dual Operational Amplifier 8-CDIP -55 to 125 4兆位512KB的x856Kb的x16插槽,启动座单电源闪 Single Inverter Gate 5-SOT-23 -40 to 85 4兆位512KB的x856Kb的x16插槽,启动座单电源闪 Single 2-Input Exclusive-OR Gate 5-SOT-23 -40 to 85 4兆位512KB的x856Kb的x16插槽,启动座单电源闪 Single 2-Input Exclusive-OR Gate 5-SC70 -40 to 85 4兆位512KB的x856Kb的x16插槽,启动座单电源闪 Replaced by THS1030 : 10-Bit, 20 MSPS ADC Single Ch., PowerDown/Standby Mode, Low Power 28-SSOP 0 to 70 4兆位512KB的x856Kb的x16插槽,启动座单电源闪 Single Positive-Edge-Triggered D-Type Flip-Flop 5-SOT-23 -40 to 85 Automotive Catalog Excalibur High-Speed Low-Power Precision Operational Amplifiers 8-SOIC -40 to 125 Precision Low-Power Single Supply Operational Amplifier 8-SOIC 0 to 70 4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Single Supply Flash Memory Replaced by THS1030 : 10-Bit, 20 MSPS ADC Single Ch., PowerDown/Standby Mode, Low Power 28-TSSOP -40 to 85 Quad Precision Low-Power Single Supply Operational Amplifier 16-SOIC High-Speed, Low-Power, Precision Dual Operational Amplifier 8-SOIC -55 to 125 Excalibur High-Speed Low-Power Precision Dual Operational Amplifier 8-PDIP CONNECTOR ACCESSORY
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| File Size |
236.29K /
34 Page |
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it Online |
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Spansion Inc. Spansion, Inc.
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| Part No. |
MBM29LV160TM90 MBM29LV160BM90TN MBM29LV160BM90PBT MBM29LV160TM90PBT MBM29LV160TM90TN
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| OCR Text |
...nded command ? temporary sector unprotection temporary sector unprotection via the reset pin this feature allows code changes in previously locked sectors ? in accordance with cfi (c ommon f lash memory i nterface) * : embedded erase tm a... |
| Description |
FLASH MEMORY CMOS 16 M (2M X 8/1M X 16) BIT MirrorFlashTM 闪存的CMOS 16米(2米x 8/1M × 16)位MirrorFlashTM FLASH MEMORY CMOS 16 M (2M X 8/1M X 16) BIT MirrorFlashTM 1M X 16 FLASH 3V PROM, 90 ns, PDSO48
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| File Size |
285.65K /
57 Page |
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it Online |
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