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NEC, Corp.
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| Part No. |
EA-C10
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| OCR Text |
...duced die size and a reasonable turnaround time. ea-c10 is well-suited for designs that may require rework, because the logic function portion of the design uses gate array primitives created just by the final metal masks. typical applicati... |
| Description |
CMOS Embedded Array (ASIC)(CMOS 嵌入式阵 嵌入式阵列（专用集成电路）的CMOS（嵌入式阵列的CMOS
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| File Size |
54.90K /
8 Page |
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TOSHIBA
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| Part No. |
TC55VL836FF-83
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| OCR Text |
...4-word by 36-bit synchronous no-turnaround static ram description the tc55vl836ff is a synchronous static random access memory (sram) organized as 262,144 words by 36 bits. ntram tm (no-turnaround sram) offers high bandwidth by eliminat... |
| Description |
262,144-WORD BY 36-BIT SYNCHRONOUS NO-turnaround STATIC RAM
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| File Size |
557.21K /
21 Page |
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it Online |
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TOSHIBA
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| Part No. |
TC55VL818FF-83
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| OCR Text |
...8-word by 18-bit synchronous no-turnaround static ram description the tc55vl818ff is a synchronous static random access memory (sram) organized as 524,288 words by 18 bits. ntram tm (no-turnaround sram) offers high bandwidth by eliminat... |
| Description |
524,288-WORD BY 18-BIT SYNCHRONOUS NO-turnaround STATIC RAM
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| File Size |
556.13K /
21 Page |
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it Online |
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Micron Technology, Inc.
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| Part No. |
MT55L256V18F1 MT55L256L18F1
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| OCR Text |
...cription the micron ? zero bus turnaround ? (zbt ? ) sram family employs high-speed, low-power cmos designs using an advanced cmos process. micron?s 4mb zbt srams integrate a 256k x 18, 128k x 32, or 128k x 36 sram core with advanced sync... |
| Description |
2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器)
3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18，流量通过ZBT SRAM的电压（3.3V输入/输出Mb的流通式同步静态存储器
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| File Size |
443.11K /
25 Page |
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it Online |
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Micron Technology, Inc.
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| Part No. |
MT55L512L18P-1
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| OCR Text |
...ing high bandwidth and zero bus turnaround delays. please refer to micron?s web site ( www.micron.com/ datasheets ) for the latest data sheet. general description the micron ? zero bus turnaround ? (zbt ? ) sram family employs high-speed,... |
| Description |
IBM AT-AT NULL MODEM CABL15 FT FF
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| File Size |
490.04K /
30 Page |
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it Online |
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Micron Technology, Inc.
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| Part No. |
MT55L64L32P1 MT55L128L18P
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| OCR Text |
...cription the micron ? zero bus turnaround ? (zbt ? ) sram family employs high-speed, low-power cmos designs using an advanced cmos process. the mt55l128l18p1 and mt55l64l32/36p1 srams integrate a 128k x 18, 64k x 32, or 64k x 36 sram core... |
| Description |
64K x 32,3.3V I/O, ZBT SRAM( 2Mb,3.3V输入/输出，静态RAM)
128K x 18, 3.3V I/O, ZBT SRAM(2Mb,3.3V输入/输出，静态RAM) 128K的18.3V的I / O的ZBT SRAM的（处理器，3.3V的输输出，静态内存）
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| File Size |
396.14K /
23 Page |
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it Online |
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Micron Technology, Inc.
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| Part No. |
MT55L128L32P1 MT55L256V18P1 MT55L256L18P1 MT55L128L36P1 MT55L128V32P1
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| OCR Text |
...cription the micron ? zero bus turnaround ? (zbt ? ) sram family employs high-speed, low-power cmos designs using an advanced cmos process. micron?s 4mb zbt srams integrate a 256k x 18, 128k x 32, or 128k x 36 sram core with advanced sync... |
| Description |
3.3V I/O28K x 32，Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器)
2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器)
3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18，流量通过ZBT SRAM的电压（3.3V输入/输出Mb的流通式同步静态存储器
3.3V I/O28K x 36，Flow-Through ZBT SRAM(3.3V或输输出,4Mb流通式同步静态存储器) 3.3V的I / O28K的36，流量通过ZBT SRAM的电压（3.3V或输输出Mb的流通式同步静态存储器
2.5V I/O28K x 32，Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 2.5VI / O28K的32，流量通过ZBT SRAM的电压（2.5V输入/输出Mb的流通式同步静态存储器
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| File Size |
426.03K /
25 Page |
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it Online |
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