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http:// RENESAS[Renesas Electronics Corporation] Renesas Electronics Corporation.
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| Part No. |
R1RP0416DSB-2PR R1RP0416D R1RP0416DGE-2LR R1RP0416DGE-2PR R1RP0416DSB-2LR
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| OCR Text |
...= -2.0 V for pulse width (under shoot) 6 ns. 2. VT (max) = VCC + 2.0 V for pulse width (over shoot) 6 ns.
Recommended DC Operating Conditions
(Ta = 0 to +70C)
Parameter Supply voltage Symbol VCC* VSS* Input voltage Notes: 1. 2. 3. 4.... |
| Description |
Memory>Fast SRAM>Asynchronous SRAM 4M High Speed SRAM (256-kword X 16-bit) From old datasheet system
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| File Size |
92.93K /
15 Page |
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it Online |
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RENESAS[Renesas Electronics Corporation]
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| Part No. |
R1RW0404DGE-2PR R1RW0404D R1RW0404DGE-2LR REJ03C0115-0100Z
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| OCR Text |
...= -2.0 V for pulse width (under shoot) 6 ns. 2. VT (max) = VCC + 2.0 V for pulse width (over shoot) 6 ns.
Recommended DC Operating Conditions
(Ta = 0 to +70C)
Parameter Supply voltage Input voltage Notes: 1. 2. 3. 4. Symbol VCC* VSS*... |
| Description |
Memory>Fast SRAM>Asynchronous SRAM 4M HIGH SPEED SRAM (1-MWORD X 4-BIT)
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| File Size |
77.35K /
13 Page |
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it Online |
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Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
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| Part No. |
R1RW0408DGE-2PR R1RW0408D R1RW0408DGE-2LR
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| OCR Text |
...= -2.0 V for pulse width (under shoot) 6 ns. 2. VT (max) = VCC + 2.0 V for pulse width (over shoot) 6 ns.
Recommended DC Operating Conditions
(Ta = 0 to +70C)
Parameter Supply voltage Symbol VCC* VSS* Input voltage Notes: 1. 2. 3. 4.... |
| Description |
4M High Speed SRAM (512-kword x 8-bit) Memory>Fast SRAM>Asynchronous SRAM
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| File Size |
79.55K /
14 Page |
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it Online |
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SRAM Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
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| Part No. |
R1RW0416DSB-2PR R1RW0416D R1RW0416DGE-2LR R1RW0416DGE-2PR R1RW0416DSB-2LR
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| OCR Text |
...= -2.0 V for pulse width (under shoot) 6 ns. 2. VT (max) = VCC + 2.0 V for pulse width (over shoot) 6 ns.
Recommended DC Operating Conditions
(Ta = 0 to +70C)
Parameter Supply voltage Symbol VCC* VSS* Input voltage Notes: 1. 2. 3. 4.... |
| Description |
4M High Speed SRAM (256-kword x 16-bit) Memory>Fast SRAM>Asynchronous SRAM
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| File Size |
93.37K /
16 Page |
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it Online |
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APEX[Apex Microtechnology]
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| Part No. |
SA305
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| OCR Text |
...PS (CONT) PER HALF BRIDGE * NO "shoot THROUGH" CURRENT
APPLICATIONS
* 3 PHASE BRUSHLESS DC MOTORS * 3 INDEPENDENT SOLENOID ACTUATORS
DESCRIPTION
The SA305 is an integrated, fully protected, 3 phase brushless DC motor driver IC. Thre... |
| Description |
PULSE WIDTH MODULATION AMPLIFIER
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| File Size |
474.98K /
6 Page |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STCF01PMR STCF01
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| OCR Text |
... the device suitable for single shoot and multiple shoot operation modes.
8/16
STCF01
7 Typical Operating Characteristics
7
Typical Operating Characteristics
(TJ = -40C to 85C, VI = 3.6V, CI = 2.2F, CO = 4.7F, L = 10H, RLC =... |
| Description |
Step-up Converter for Cell Phone Camera Flash LEDs
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| File Size |
419.05K /
16 Page |
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it Online |
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Taiwan Semiconductor Co... TSC[Taiwan Semiconductor Company, Ltd]
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| Part No. |
TS3405CS TS3405 TS34041
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| OCR Text |
... also monitored by the adaptive shoot-through protection circuitry to determine when the upper MOSFET can be turned on. The sourcing Rds(on) is 15 and the sink Rds(on) is 7. Ugate can handle high voltage up to maximum 20V. This pin represen... |
| Description |
Single Synchronous Buck PWM Controller
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| File Size |
171.73K /
10 Page |
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it Online |
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Price and Availability
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