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MMA7340L 100307 LBN07083 ISL5100A ZMY11 DAN202U MMA7340L 44025
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  self-leaded Datasheet PDF File

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    AD9501 AD9501JN AD9501JP AD9501JQ AD9501SQ

AD[Analog Devices]
Part No. AD9501 AD9501JN AD9501JP AD9501JQ AD9501SQ
OCR Text ...med delay (t D) = 0 ns. Maximum self-resetting trigger rate is limited to 6.9 MHz with 100 ns programmed delay. If t D= 0 ns and external RE...Leaded Chip Carrier; Q = Cerdip. DIE LAYOUT AND MECHANICAL INFORMATION MECHANICAL INFORMATION ...
Description Digitally Programmable Delay Generator

File Size 174.39K  /  12 Page

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    K4M281633F K4M281633F-C K4M281633F-F1L K4M281633F-G K4M281633F-L K4M281633F-N K4M281633F-RE

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4M281633F K4M281633F-C K4M281633F-F1L K4M281633F-G K4M281633F-L K4M281633F-N K4M281633F-RE
OCR Text ...Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) * DQM for masking. * Auto refresh. * ...Leaded, -BXXX : Lead Free). Mobile-SDRAM GENERAL DESCRIPTION The K4M281633F is 134,217,728 bi...
Description 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 200万16 × 4银行54FBGA移动SDRAM

File Size 111.99K  /  12 Page

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    K4M28163LF K4M28163LF-C K4M28163LF-L K4M28163LF-N K4M28163LF-R1L K4M28163LF-R75 K4M28163LF-RE K4M28163LF-S K4M28163LF-BR

SAMSUNG[Samsung semiconductor]
Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4M28163LF K4M28163LF-C K4M28163LF-L K4M28163LF-N K4M28163LF-R1L K4M28163LF-R75 K4M28163LF-RE K4M28163LF-S K4M28163LF-BR750
OCR Text ...Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) * DQM for masking. * Auto refresh. * ...Leaded, -BXXX : Lead Free). Mobile-SDRAM GENERAL DESCRIPTION The K4M28163LF is 134,217,728 bi...
Description 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 200万16 × 4银行4FBGA移动SDRAM
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54

File Size 112.71K  /  12 Page

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    K4M28163PF K4M28163PF-F75 K4M28163PF-R K4M28163PF-RBGF75 K4M28163PF-RG K4M28163PF-RF750 K4M28163PF-BF900 K4M28163PF-BF75

Samsung Electronic
Samsung Semiconductor Co., Ltd.
Data Device, Corp.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. K4M28163PF K4M28163PF-F75 K4M28163PF-R K4M28163PF-RBGF75 K4M28163PF-RG K4M28163PF-RF750 K4M28163PF-BF900 K4M28163PF-BF750 K4M28163PF-BG750
OCR Text ...Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) -. DS (Driver Strength) * DQM for mas...Leaded, -BXXX : Lead Free). Mobile-SDRAM GENERAL DESCRIPTION The K4M28163PF is 134,217,728 bi...
Description 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 200万16 × 4银行4FBGA移动SDRAM
8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 0.80 MM PITCH, LEAD FREE, FBGA-54
8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, FBGA-54
8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 0.80 MM PITCH, FBGA-54

File Size 111.60K  /  12 Page

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    HI-8010 HI-8010J-85 HI-8010PQI HI-8010PQT HI-8010SM-32 HI-8010SM-36 HI-8110 HI-8110J-85 HI-8110PQI HI-8110PQT HI-8110SM-

HOLT INTEGRATED CIRCUITS INC
Holt Integrated Circuits, Inc.
HOLTIC[Holt Integrated Circuits]
Part No. HI-8010 HI-8010J-85 HI-8010PQI HI-8010PQT HI-8010SM-32 HI-8010SM-36 HI-8110 HI-8110J-85 HI-8110PQI HI-8110PQT HI-8110SM-32 HI-8110SM-36 HI-8010SERIES HI-8110SERIES
OCR Text ...f 2 modes; externally driven or self-oscillating. When the LCDO input is externally driven with the LCDOOPT input open circuit (Figure 2), t...LEADED CHIP CARRIER 40 48 HOLT INTEGRATED CIRCUITS 3-7 HI-8010/HI-8110 Series SYMBOL VS...
Description 256 MACROCELL 3.3 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN LIQUID CRYSTAL DISPLAY DRIVER, PQFP52
CMOS High Voltage LCD Display Driver (30-38 Segments) CMOS高电压液晶显示驱动程序(30-38段)
CMOS HIGH VOLTAGE DISPLAY DRIVER

File Size 379.41K  /  8 Page

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    HI-8020 HI-8020J-85 HI-8020S-61 HI-8020S-63 HI-8020SM-62 HI-8020SM-64 HI-8120SM-62 HI-8120S-63 HI-8120S-61 HI-8120J-85 H

Holt Integrated Circuits, Inc.
HOLTIC[Holt Integrated Circuits]
Part No. HI-8020 HI-8020J-85 HI-8020S-61 HI-8020S-63 HI-8020SM-62 HI-8020SM-64 HI-8120SM-62 HI-8120S-63 HI-8120S-61 HI-8120J-85 HI-8120SM-64 HI-8120
OCR Text ...f 2 modes; externally driven or self-oscillating. When the LCDO input is externally driven with the LCDOOPT input open circuit (Figure 2), t...LEADED CHIP CARRIER 40 48 HOLT INTEGRATED CIRCUITS 3-13 HI-8020/HI-8120 PACKAGE DIMENSIONS ...
Description CMOS HIGH VOLTAGE DISPLAY DRIVER LIQUID CRYSTAL DISPLAY DRIVER, CQCC48
CMOS HIGH VOLTAGE DISPLAY DRIVER LIQUID CRYSTAL DISPLAY DRIVER, PQCC44
256 MACROCELL 3.3 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN LIQUID CRYSTAL DISPLAY DRIVER, CQCC48
128 MACROCELL 3.3 VOLT ZERO POWER ISP CP - NOT RECOMMENDED for NEW DESIGN LIQUID CRYSTAL DISPLAY DRIVER, CQCC48

File Size 270.46K  /  6 Page

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    HY57V28162 HY57V281620ELT HY57V281620ELT-5 HY57V281620ETP-5 HY57V281620ETP-6 HY57V281620ETP-H HY57V281620ELT-7 HY57V2816

HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
Part No. HY57V28162 HY57V281620ELT HY57V281620ELT-5 HY57V281620ETP-5 HY57V281620ETP-6 HY57V281620ETP-H HY57V281620ELT-7 HY57V281620ELTP-7 HY57V281620ELTP-H HY57V281620ET HY57V281620ET-5 HY57V281620ET-7 HY57V281620ETP-7 HY57V281620ELT-6 HY57V281620ELT-H HY57V281620ELTP-5 HY57V281620ELTP-6 HY57V281620ET-6 HY57V281620ET-H
OCR Text ...3 Clocks * * * Auto refresh and self refresh 4096 Refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or full page f...Leaded. HY57V281620ELT Series: Low power, Leaded. HY57V281620ETP Series: Normal power, Lead Free. HY...
Description SDRAM - 128Mb
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O 8M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54

File Size 119.76K  /  13 Page

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    K4M513233E K4M513233E-F1H K4M513233E-F1L K4M513233E-F75 K4M513233E-L K4M513233E-MC K4M513233E-MEC K4M513233E-MC1L0

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4M513233E K4M513233E-F1H K4M513233E-F1L K4M513233E-F75 K4M513233E-L K4M513233E-MC K4M513233E-MEC K4M513233E-MC1L0
OCR Text ...Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) * DQM for masking. * Auto refresh. * ...Leaded, -EXXX : Lead Free). Mobile-SDRAM GENERAL DESCRIPTION The K4M513233E is 536,870,912 bi...
Description 16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 4米32Bit的4银行0FBGA移动SDRAM

File Size 138.60K  /  12 Page

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    K4M51323LE-F1L K4M51323LE-L K4M51323LE-M K4M51323LE-MC K4M51323LE-EL800

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4M51323LE-F1L K4M51323LE-L K4M51323LE-M K4M51323LE-MC K4M51323LE-EL800
OCR Text ...Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) * DQM for masking. * Auto refresh. * ...Leaded, -EXXX : Lead Free). Mobile-SDRAM GENERAL DESCRIPTION The K4M51323LE is 536,870,912 bi...
Description 16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 4米32Bit的4银行0FBGA移动SDRAM

File Size 138.94K  /  12 Page

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    MBD110DWT1 MBD330D MBD770DWT1 MBD330DWT1

MOTOROLA[Motorola, Inc]
Part No. MBD110DWT1 MBD330D MBD770DWT1 MBD330DWT1
OCR Text ...pad geometry, the packages will self align when subjected to a solder reflow process. SOT-363 0.5 mm (min) 1.9 mm SOT-363 POWER DISSIPATION The power dissipation of the SOT-363 is a function of the pad size. This can vary from th...
Description Dual Schottky Barrier Diodes

File Size 180.57K  /  8 Page

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