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SI106 DS1858 VTM1EGD 45DB321D LM317 1N4007FF OH10011 2SA115
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    HFB50HI20

International Rectifier
Part No. HFB50HI20
OCR Text ...eakdown Voltage Forward Voltage see Fig. 1 Min. Typ. Max. Units 200 -- -- -- -- -- -- -- -- -- -- -- -- 8.7 -- 1.34 1.28 1.7 1.69 10 100 330 -- A A pF nH V V Test Conditions IR = 100A IF = 50A, TJ = -55C IF = 50A, TJ = 25C IF = 1...
Description Ultrafast, Soft Recovery Diode

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    IPB021N06N3G IPP024N06N3G IPI024N06N3G

Infineon Technologies AG
Part No. IPB021N06N3G IPP024N06N3G IPI024N06N3G
OCR Text ... chip is able to carry 256A. 3) see figure 3 for more detailed information 4) see figure 13 for more detailed information Rev. 2.2 page 1 2009-12-11 IPB021N06N3 G IPI024N06N3 G IPP024N06N3 G Parameter Symbol Condit...
Description OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec.
OptiMOS? Power-Transistor Features Ideal for high frequency switching and sync. rec.

File Size 476.81K  /  11 Page

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    IPB023N04NG IPP023N04NG

Infineon Technologies AG
Part No. IPB023N04NG IPP023N04NG
OCR Text ...|R DS(on)max, I D=90 A 75 see figure 3 for more detailed information see figure 13 for more detailed information Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PC...
Description OptiMOS?? Power-Transistor
OptiMOS? Power-Transistor

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Part No. PT65502L508 PT65503L508 PT65702L254 PT65706 PT65106L254
OCR Text ...raight pitch code (see truth tables) positions .100" (2,54) .200"(5,08) binary coded decimal 10 pt65101 pt65101l254 pt65101l508 comp. of binary coded dec. 10 pt65102 pt65102l254 pt65102l508 binary coded hexadecim...
Description ROTARY CODED SWITCH-10POSITIONS, BCD COMPLEMENT, LATCHED, 0.4A, 24VDC, THROUGH HOLE-RIGHT ANGLE
ROTARY CODED SWITCH-16POSITIONS, BINARY CODED HEXADECIMAL, LATCHED, 0.4A, 24VDC, THROUGH HOLE-RIGHT ANGLE
ROTARY CODED SWITCH-16POSITIONS, BCH COMPLEMENT, LATCHED, 0.4A, 24VDC, THROUGH HOLE-STRAIGHT
ROTARY CODED SWITCH-16POSITIONS, BCH COMPLEMENT, LATCHED, 0.4A, 24VDC, THROUGH HOLE-RIGHT ANGLE

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    IPB029N06N3G IPP032N06N3G IPI032N06N3G

Infineon Technologies AG
Part No. IPB029N06N3G IPP032N06N3G IPI032N06N3G
OCR Text ...he chip is able to carry 188 A. see figure 3 for more detailed information see figure 13 for more detailed information Rev. 2.2 page 1 2009-12-11 IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G Parameter Symbol Conditions mi...
Description OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec.
OptiMOS? Power-Transistor Features Ideal for high frequency switching and sync. rec.

File Size 476.51K  /  11 Page

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    IPF135N03LG IPD135N03LG IPS135N03LG IPU135N03LG

Infineon Technologies AG
Part No. IPF135N03LG IPD135N03LG IPS135N03LG IPU135N03LG
OCR Text ...|R DS(on)max, I D=30 A 22 see figure 3 for more detailed information see figure 13 for more detailed information Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PC...
Description OptiMOS 3 Power-Transistor Features Optimized technology for DC/DC converters

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    2SB631 2SB631K 2SD600 2SD600K

SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Part No. 2SB631 2SB631K 2SD600 2SD600K
OCR Text ...(-)50mA IC=(-)500mA, IB=(-)50mA see specified Test Circuit see specified Test Circuit see specified Test Circuit Ratings min 60* 20 (110) 130 (30)20 (-)0.15 (-)0.85 (80) 100 (100) 500 (600) 700 (-)0.4 (-)1.2 MHz MHz pF V V ns ns ns ns ns ns...
Description NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications
100V/120V/ 1A Low-Frequency Power Amplifier Applications
100V/120V/ 1A Low-Frequency Power Amp Applications
PNP/NPN Epitaxial Planar Silicon Transistors
100V/120V, 1A Low-Frequency Power Amp Applications
PNP Epitaxial Planar Silicon Transistor for 100V/120V, 1A Low-Frequency Power Amplifier Applications(用于100V/120VA低频功率放大器应用的PNP硅外延平面型晶体

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