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  s21e2 Datasheet PDF File

For s21e2 Found Datasheets File :: 216    Search Time::1.875ms    
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    TOSHIBA[Toshiba Semiconductor]
Part No. MT6L58AE
OCR Text ...on gain Symbol ICBO IEBO hFE fT s21e2 (1) s21e2 (2) NF (1) NF (2) Cre Test Condition VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 5 mA VCE = 3 V, IC = 5 mA VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 3 V, IC = 7 mA, f = 2 GHz VCE = 1 V, IC...
Description TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS

File Size 86.26K  /  3 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. MT6L57AT
OCR Text ...on gain Symbol ICBO IEBO hFE fT s21e2 (1) s21e2 (2) NF (1) NF (2) Cre Test Condition VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 5 mA VCE = 3 V, IC = 5 mA VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 3 V, IC = 7 mA, f = 2 GHz VCE = 1 V, IC...
Description VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS

File Size 86.77K  /  3 Page

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    PANASONIC[Panasonic Semiconductor]
Part No. MSG33002
OCR Text ...d) Symbol ICBO ICEO IEBO hFE fT s21e2 NF Cob Conditions VCB = 9 V, IE = 0 VCE = 6 V, IB = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 6 mA VCE = 3 V, IC = 20 mA, f = 2 GHz VCE = 3 V, IC = 20 mA, f = 2 GHz VCE = 3 V, IC = 6 mA, f = 2 GHz VCB = 3 V, ...
Description SIGE HBT TYPE FOR LOW-NOISE RF AMPLIFIER

File Size 84.75K  /  4 Page

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    UPA835 UPA835TC UPA835TC-T1

NEC Corp.
NEC[NEC]
Part No. UPA835 UPA835TC UPA835TC-T1
OCR Text ... 100 14.00 Insertion Power Gain s21e2 (dB) 12.00 10.00 8.00 6.00 4.00 2.00 100 Collector Current IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 18.00 VCE = 3 V 16.00 f = 1 GHz 14.00 12.00 10.00 8.00 6.00 4.00 2.00 0.00 1 10 Collect...
Description NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

File Size 69.71K  /  12 Page

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    SBFP540M

Sanyo Semicon Device
Part No. SBFP540M
OCR Text ... voltage operation. High Gain : s21e2=18.5dB typ (f=1.8GHz). Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipa...
Description Ultrahigh-Frequency Transistors
UHF to C Band Low Noise Amplifier, Low Phase Noise Oscillation Applications

File Size 58.74K  /  16 Page

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    55GN01S

Sanyo Semicon Device
Sanyo Electric Co.,Ltd.
Part No. 55GN01S
OCR Text ...y : fT= 5.5GHz typ. High gain : s21e2=10dB typ (f=1GHz). Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltag...
Description    UHF Wide-band Low-noise Amplifier Applications
Pico-GET Series
From old datasheet system

File Size 31.13K  /  6 Page

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    55GN01C

Sanyo Semicon Device
Sanyo Electric Co.,Ltd.
Part No. 55GN01C
OCR Text ...y : fT= 5.5GHz typ. High gain : s21e2=9.5dB typ (f=1GHz). Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipatio...
Description    UHF Wide-band Low-noise Amplifier Applications
Pico-GET Series

File Size 37.79K  /  6 Page

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    2SC6025

Sanyo Semicon Device
Part No. 2SC6025
OCR Text ...VCE=1V). fT=21GHz typ (VCE=3V). s21e2=12.5dB typ (f=2GHz). * * Low-noise use : High cut-off frequency : : Low operating voltage. High gain : Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Co...
Description    NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications

File Size 60.39K  /  15 Page

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    2SC6024

Sanyo Semicon Device
Part No. 2SC6024
OCR Text ... operating voltage. High gain : s21e2=12.5dB typ (f=2GHz). Ultraminiature and thin flat leadless package (1.4mm!0.8mm!0.6mm). Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Vo...
Description UHF to C Band Low-Noise Amplifier and OSC Applications

File Size 54.82K  /  15 Page

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    2SC6023

Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
Part No. 2SC6023
OCR Text ...VCE=1V). fT=22GHz typ (VCE=3V). s21e2=14dB typ (f=2GHz). * * Low-noise use : High cut-off frequency : : Low operating voltage. High gain : Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Coll...
Description NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications

File Size 58.23K  /  15 Page

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For s21e2 Found Datasheets File :: 216    Search Time::1.875ms    
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