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| Part No. |
MT8VDDT1664AG-403A1
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| OCR Text |
...ss table 128mb refresh count 4k row addressing 4k (a0?a11) device bank addressing 4 (ba0, ba1) device configuration 16 meg x 8 column addressing 1k ( a0?a9) module bank addressing 1 ( s0#) part numbers and timing parameters part number pa... |
| Description |
16M X 64 DDR DRAM MODULE, 0.6 ns, DMA184
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| File Size |
335.96K /
16 Page |
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it Online |
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INTEGRATED SILICON SOLUTION INC
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| Part No. |
IS41LV8200A-50J
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| OCR Text |
...ndom ac- cesses within a single row with access cycle time as short as 20 ns per 4-bit word. these features make the is41lv8200a ideally suited for high-bandwidth graphics, digital signal processing, high- performance computing systems, and... |
| Description |
2M X 8 EDO DRAM, 50 ns, PDSO28
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| File Size |
126.75K /
20 Page |
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it Online |
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NANYA TECHNOLOGY CORP
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| Part No. |
NT5DS64M8AF-6K
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| OCR Text |
...are used to select the bank and row to be accessed. the address bits registered coincident with the read or write command are used to select the bank and the starting column locati on for the burst access. the ddr sdram provides for prog... |
| Description |
64M X 8 DDR DRAM, 0.7 ns, PBGA60
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| File Size |
2,293.16K /
76 Page |
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it Online |
Download Datasheet |
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Price and Availability
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