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  rg-210 u Datasheet PDF File

For rg-210 u Found Datasheets File :: 1417    Search Time::1.734ms    
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    HGTP12N60C3 HGT1S12N60C3 HGT1S12N60C3S

Harris, Corp.
HARRIS[Harris Corporation]
Fairchild Semiconductor
Part No. HGTP12N60C3 HGT1S12N60C3 HGT1S12N60C3S
OCR Text ... VCE = VGE VGE = 20V TJ = 150oC RG = 25 VGE = 15V L = 100H Gate-Emitter Threshold Voltage Gate-Emitter Leakage Current Switching SOA V...210 380 900 - 55 71 400 275 1.2 V nC nC ns ns ns ns J J oC/W Current Turn-On Delay Time Cu...
Description 24A, 600V, uFS Series N-Channel IGBTs 4A00V的,的ufs系列N沟道IGBT
24A/ 600V/ uFS Series N-Channel IGBTs

File Size 131.11K  /  6 Page

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    IRFU214B IRFR214B IRFU214BTUFP001 IRFR214BTMFP001

http://
Intersil Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. IRFu214B IRFR214B IRFu214BTuFP001 IRFR214BTMFP001
OCR Text ... 5) VDD = 125 V, ID = 2.8 A, RG = 25 (Note 4, 5) -------- 6.0 30 25 30 8.1 1.4 3.5 22 70 60 70 10.5 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous D...
Description 250V N-Channel MOSFET
250V N-Channel B-FET / Substitute of IRFu214 & IRFu214A
250V N-Channel B-FET / Substitute of IRFR214 & IRFR214A

File Size 644.81K  /  9 Page

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    IRFU3505 IRFR3505

IRF[International Rectifier]
Part No. IRFu3505 IRFR3505
OCR Text ...- VDD = 28V --- ID = 30A ns --- RG = 6.8 --- VGS = 10V D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS ...
Description AuTOMOTIVE MOSFET

File Size 580.87K  /  11 Page

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    IRLR_U2905 U2905 IRLR2905 IRLR/U2905 IRLR2905PBF IRLR2905TRL IRLR2905TRR IRLU2905 IRLU2905PBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRLR_u2905 u2905 IRLR2905 IRLR/u2905 IRLR2905PBF IRLR2905TRL IRLR2905TRR IRLu2905 IRLu2905PBF
OCR Text ...- 84 --- ID = 25A ns --- 26 --- RG = 3.4, VGS = 5.0V --- 15 --- R D = 1.1, See Fig. 10 Between lead, --- 4.5 --- nH 6mm (0.25in.) G from pa...210 320 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ...
Description HEXFET Power MOSFET HEXFET功率MOSFET
HEXFET® Power MOSFET
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package

File Size 133.52K  /  10 Page

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    IXTQ82N25P IXTK82N25P IXTT82N25P

IXYS[IXYS Corporation]
Part No. IXTQ82N25P IXTK82N25P IXTT82N25P
OCR Text ... 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Maximum Ratings 250 250 20 82 ...210 29 VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A RG = 4 (External) 20 78 22 142 VGS= 10 V, VDS = 0.5 VD...
Description    PolarHT Power MOSFET
Discrete MOSFETs: Standard N-channel Types

File Size 606.20K  /  5 Page

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    MTP12P10 MTP12P10_D ON2547

MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTP12P10 MTP12P10_D ON2547
OCR Text ...(VDD = 25 V, ID = 0.5 Rated ID, RG = 50 ) See Figures 12 and 13 td(on) tr td(off) tf Qg Qgs Qgd -- -- -- -- 33 (Typ) 16 (Typ) 17 (Typ) 50 15...210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN ...
Description From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS
TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHM

File Size 190.83K  /  6 Page

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    MTP55N06 MTP55N06Z MTP55N06Z_D ON2627 ON2626

Motorola, Inc.
MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTP55N06 MTP55N06Z MTP55N06Z_D ON2627 ON2626
OCR Text ..., Peak IL = 55 Apk, L = 0.3 mH, RG = 25 ) Thermal Resistance -- Junction-to-Case Thermal Resistance -- Junction-to-Ambient Maximum Lead Temp...210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN ...
Description From old datasheet system
TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm

File Size 139.95K  /  6 Page

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    MTP8N50E MTP8N50E_D ON2651 ON2650

Motorola, Inc.
MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTP8N50E MTP8N50E_D ON2651 ON2650
OCR Text ..., PEAK IL = 8.0 Apk, L = 16 mH, RG = 25 W) Thermal Resistance - Junction-to-Case - Junction-to-Ambient Maximum Lead Temperature for Solderin...210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN ...
Description From old datasheet system
TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS(on) = 0.8 OHM

File Size 154.26K  /  6 Page

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    NTP125N02R NTB125N02R NTB125N02RT4

ONSEMI[ON Semiconductor]
Part No. NTP125N02R NTB125N02R NTB125N02RT4
OCR Text ...0 Vdc, IL = 15.5 Apk, L = 1 mH, RG = 25 W) Maximum Lead Temperature for Soldering Purposes, 1/8 from Case for 10 Seconds Symbol VDSS VGS RqJ...210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 GATE DRAIN SOuRC...
Description Power MOSFET 125 A / 24 V N-Channel TO-220 / D2PAK
Power MOSFET 125 A/ 24 V N-Channel TO-220/ D2PAK
Power MOSFET 125 A, 24 V N-Channel TO-220, D2PAK
Power MOSFET 125 A 24 V N-Channel TO-220 D2PAK

File Size 68.88K  /  6 Page

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    NTP65N02 NTP65N02R NTB65N02R NTB65N02RT4

ONSEMI[ON Semiconductor]
Part No. NTP65N02 NTP65N02R NTB65N02R NTB65N02RT4
OCR Text ...GS = 5 Vdc, IL = Apk, L = 1 mH, RG = 25 W) Thermal Resistance Junction-to-Case Junction-to-Ambient (Note 1) Junction-to-Ambient (Note 2) Max...210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 GATE DRAIN SOuRCE DR...
Description Power MOSFET 65 A / 24 V N-Channel TO-220 / D2PAK
Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK
Power MOSFET 65 A 24 V N-Channel TO-220 D2PAK

File Size 47.08K  /  4 Page

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