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Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
CNY17-1F-M CNY17-1FV-M CNY17-1FR2-M
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| OCR Text |
...ma t a = 25?c fig. 5 ctr vs. rbe (unsaturated) (black package) fig. 6 ctr vs. rbe (unsaturated) (white package) r be - base resistance (k ?) r be - base resistance (k ?) normalized ctr ( ctr rbe / ctr rbe(open) ) normalized ctr ( c... |
| Description |
1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER DIP-6
1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER SURFACE MOUNT, DIP-6
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| File Size |
267.38K /
14 Page |
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hitachi
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| Part No. |
2SB1494
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| OCR Text |
...= -0.1 mA, IE = 0 I C = -25 mA, rbe = I C = -200 mA, rbe = I E = -50 mA, IC = 0 VCB = -100 V, IE = 0 VCE = -100 V, rbe = VCE = -4 V, IC = -12 A*1 VCE = -4 V, IC = -25 A*1 I C = -12 A, IB = -24 mA*1 I C = -25 A, IB = -250 mA*1 I C = -12 A... |
| Description |
Silicon PNP Triple Diffused
From old datasheet system
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| File Size |
32.59K /
5 Page |
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hitachi
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| Part No. |
2SD1922
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| OCR Text |
... I C = 10 A, IE = 0 I C = 1 mA, rbe = I C = 0.8 A, rbe = , L = 20 mH I E = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 20 V, rbe = VEB = 5 V, IC = 0 VCE = 2 V, IC = 0.1 A*1 I C = 0.8 A, IB = 80 mA*1 I D = 0.8 A*1
Collector to emitter breakdo... |
| Description |
Silicon NPN Epitaxial
From old datasheet system
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| File Size |
37.70K /
6 Page |
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Vishay
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| Part No. |
MCT5211-X007 MCT5211-X009
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| OCR Text |
...0k vth = 1.5 v tphl tplh vce=5v rbe - base emitter resistor - figure 16.propagationdelays.baseemitterresistor figure 17.propagationdelays.baseemitterresistor imct5210_16 10 7 10 6 10 5 0 10 20 30 40 50 rbe - base emitter resistor - propagat... |
| Description |
Optocouplers
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| File Size |
131.89K /
8 Page |
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Vishay Semiconductors
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| Part No. |
IL66-1
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| OCR Text |
...rlington output, with internal rbe (single, dual, quad channel) il66/ild66/ilq66 vishay semiconductors description il66, ild66, and ilq66 are optically coupled isolators employing gallium arsenide infrared emitters and silicon photodarlin... |
| Description |
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| File Size |
660.83K /
9 Page |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BFN20 Q62702-F1058
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| OCR Text |
...tage Collector-emitter voltage, rbe = 2.7 k Emitter-base voltage Collector current Peak collector current Total power dissipation, TS = 120 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - ... |
| Description |
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
From old datasheet system
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| File Size |
128.75K /
4 Page |
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Optek Technology
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| Part No. |
OPB703W
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| OCR Text |
...npn silicon phototransistor or rbe phototransistor, mounted side-by-s ide on converging optical axes in a black plastic housing and are designed for remote mounting utilizing interconnect wires of ul approved 26 awg, 24? (61.0cm) minimum ... |
| Description |
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| File Size |
355.53K /
9 Page |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
2SA743 2SA743A
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| OCR Text |
...C = -1 mA, IE = 0 I C = -10 mA, rbe = I E = -1 mA, IC = 0 VCE = -50 V, rbe = 1 k VCE = -80 V, rbe = 1 k VCE = -4 V, IC = -50 mA VCE = -4 V, IC = -1 A (pulse) VCE = -4 V, IC = -50 mA I C = -1 A, IB = -0.1 A VCE = -4 V, IC = -30 mA
-0.65 ... |
| Description |
Silicon PNP Transistor
Silicon PNP Epitaxial
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| File Size |
30.46K /
6 Page |
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it Online |
Download Datasheet |
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