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Texas Instruments |
| Part No. |
OPA858QDSGRQ1
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| Description |
Automotive 5.5-GHz gain bandwidth, decompensated transimpedance amplifier with FET input 8-WSON -40 to 125
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| Tech specs |
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Official Product Page
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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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| Part No. |
CLY2 Q62702-L96
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| Description |
GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz) 砷化镓场效应管(功放为频率高千兆赫移动电话) From old datasheet system
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| File Size |
52.08K /
7 Page |
View
it Online |
Download Datasheet
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Texas Instruments |
| Part No. |
OPA858IDSGT
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| Description |
5.5 GHz Gain Bandwidth Product, Decompensated Transimpedance Amplifier with FET Input 8-WSON -40 to 125
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| Tech specs |
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Official Product Page
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Texas Instruments |
| Part No. |
OPA858IDSGR
|
| Description |
5.5 GHz Gain Bandwidth Product, Decompensated Transimpedance Amplifier with FET Input 8-WSON -40 to 125
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| Tech specs |
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Get Free Sample |
Official Product Page
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Siemens Semiconductor G...
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| Part No. |
Q62702-A1006
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| Description |
Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers, phase detectors and modulators)
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| File Size |
47.37K /
3 Page |
View
it Online |
Download Datasheet
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Siemens Semiconductor G...
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| Part No. |
Q62702-A1017
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| Description |
Silicon Dual Schottky Diode (High barrier diode for balanced mixers, phase detectors and modulators)
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| File Size |
48.39K /
3 Page |
View
it Online |
Download Datasheet
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