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New Jersey Semi-Conductor Products, Inc.
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| Part No. |
IRF323 IRF320
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| OCR Text |
...ds(on) = 1.8iiand2.5ii ? single pulse avalanche energy rated ? soa is power dissipation limited ? nanosecond switching speeds ? linear trans...8a, vgs = 10v, (figures 8, 9) vds ^ 10v. 'd = 2.0a, (figure 12) vdd = 200v, id = 3.3a, rg = 18u, rl ... |
| Description |
2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs
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| File Size |
133.40K /
3 Page |
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it Online |
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TY Semiconductor Co., Ltd
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| Part No. |
KRF7325
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| OCR Text |
...a 62.5 /w *1 repetitive rating; pulse width limited by max. junction temperature. *2 when mounted on 1 inch square copper board. a 4008-318-...8a*1 24 v gs =-2.5v,i d = -6.2a*1 33 v gs =-1.8v,i d = -3.9a*1 49 gate threshold voltage v gs(th) v ... |
| Description |
Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET
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| File Size |
117.22K /
2 Page |
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it Online |
Download Datasheet
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Price and Availability
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