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  oxide-nitride Datasheet PDF File

For oxide-nitride Found Datasheets File :: 124    Search Time::0.812ms    
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    SIP-4781-03-1001FB SIP-4781-03-1001FC SIP-4781-03-1001FD SIP-4781-03-1001FF SIP-4769-11-1001FB SIP-4769-11-1001FC SIP-47

IRC - a TT electronics Company.
Part No. SIP-4781-03-1001FB SIP-4781-03-1001FC SIP-4781-03-1001FD SIP-4781-03-1001FF SIP-4769-11-1001FB SIP-4769-11-1001FC SIP-4769-11-1001FD SIP-4769-11-1001FF SIP-4769-03-1001JB SIP-4769-03-1001JC SIP-4769-03-1001JD SIP-4769-03-1001JF SIP-4769-01-1001JB SIP-4769-01-1001JC SIP-4769-01-1001JD SIP-4769-01-1001JF SIP-4769-01-1001GB SIP-4769-01-1001GC SIP-4769-01-1001GD SIP-4769-01-1001GF SIP-4769-01-1001FB SIP-4769-01-1001FC SIP-4769-01-1001FD SIP-4769-01-1001FF SIP-4769-01-1001DB SIP-4769-01-1001DC SIP-4769-01-1001DD SIP-4769-01-1001DF SIP-4768-02-1001JB SIP-4768-02-1001JC SIP-4768-02-1001JD SIP-4768-02-1001JF SIP-4768-02-1001FB SIP-4768-02-1001FC SIP-4768-02-1001FD SIP-4768-02-1001FF SIP-4768-01-1001JB SIP-4768-01-1001JC SIP-4768-01-1001JD SIP-4768-01-1001JF SIP-4768-01-1001FB SIP-4768-01-1001FC SIP-4768-01-1001FD SIP-4768-01-1001FF SIP-4761-11-1001FB SIP-4761-11-1001FC SIP-4761-11-1001FD SIP-4761-11-1001FF SIP-4761-11-1001DB SIP-4761-11-1001DC SIP-4761-11-1001DD SIP-4761-11-1001DF SIP-4761-03-1001GB SIP-4761-03-1001GC SIP-4761-03-1001GD SIP-4761-03-1001GF SIP-4761-01-1001DB SIP-4761-01-1001DC SIP-4761-01-1001DD SIP-4761-01-1001DF SIP-4761-01-1001FB SIP-4761-01-1001FC SIP-4761-01-1001FD SIP
OCR Text ...ntalum nitride with passivation oxide layer Copper leads electroplated with gold over nickel, hot tinned leads available Lid and ceramic substrate totally filled with an epoxy adhesive Thermal compression bonded lead terminations prov...
Description TaNFilm垄莽 Precision SIP Network Commercial and MIL Qualified
TaNFilm? Precision SIP Network Commercial and MIL Qualified

File Size 252.11K  /  4 Page

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    N.A.
Part No. SC33303440 SC00680912 SC01000912
OCR Text oxide-nitride dielectric Low loss -- typically 0.04 dB in a 50 system Operation through 26 GHz Wide temperature operation Description Skyworks MIS Chip Capacitors are available in a wide range of sizes and capacitance values. They are ...
Description MIS Chip Capacitors

File Size 43.21K  /  3 Page

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    IMP[IMP, Inc]
IMP Inc
Part No. C1227
OCR Text ...oltage VTFP(P) Capacitance Gate Oxide Metal-1 to Poly1 Metal-2 to Metal-1 Vertical NPN Transistor Beta Early Voltage Cut-Off Frequency Symbo...nitride Layout Rules Min Channel Width Min Spacing, Active Region, 5V Poly1 Width/Space Poly2 Wi...
Description ECONOLINE: RSS & RSD - 1kVDC and 3KVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 85%- SMD5, SMD8, SMD10 and SMD12 case styles 30V的高压BiCMOS工艺1.2毫米双金双聚
From old datasheet system
HV BiCMOS 1.2mm 30V Double Metal - Double Poly

File Size 26.81K  /  2 Page

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    ATMEL[ATMEL Corporation]
Part No. AT89C51RD2 AT89C51RD2-SMSIM 89C51ED2 AT89C51ED2 AT89C51ED2-3CSIM AT89C51ED2-IM AT89C51ED2-RDTIM AT89C51ED2-RLTIM AT89C51ED2-SLSIM AT89C51ED2-SMSIM AT89C51RD2-IM AT89C51RD2-RDTIM AT89C51RD2-RLTIM AT89C51RD2-SLSIM
OCR Text ...r Diameter Number Of Masks Gate Oxide (Logic transistors) Material Thickness Gate Oxide (EPROM cell) Material Thickness Silicon Dioxide 6...nitride 21000A 4 Rev. 0 - 2003 July AT89C51RD2 / AT89C51ED2 QualPack 3.2 Product Design 1...
Description FLASH 8-bit C51 Microcontroller
8-bit Flash Microcontroller

File Size 1,370.19K  /  24 Page

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    Laird Technologies, Inc.
Part No. BR1458S/D
OCR Text ... gate processing gate oxide thickness 150? gate terminal phosphorous doped polysilicon (pocl) n+ source drain dopan...nitride over psg oxide electrical characteristics field threshold voltage >12v p...
Description Reliability Report for the LCX Product Family 可靠性报告的回旋支产品系

File Size 168.97K  /  16 Page

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    ADPOW[Advanced Power Technology]
Part No. ARF450
OCR Text ...d mounting surface is beryllium oxide. Beryllium oxide dust is highly toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domes...
Description RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 150V 500W 120MHz
N-CHANNEL ENHANCEMENT MODE

File Size 176.59K  /  4 Page

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    ARF1511

Advanced Power Technology
Part No. ARF1511
OCR Text ... mounting surface is beryllium oxide, beo. beryllium oxide dust is toxic when inhaled. care must be taken during handling and mounting to avoid damage to this area. these devices must never be thrown away with general industri- al o...
Description RF Power Transistors: INDUSTRIAL, SCIENTIFIC, MEDICAL (ISM) & HF COMMUNICATIONS

File Size 79.22K  /  2 Page

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    ARF1505

Advanced Power Technology
Part No. ARF1505
OCR Text ...d mounting surface is beryllium oxide, beo. beryllium oxide dust is toxic when in- haled. care must be taken during handling and mounting to avoid damage to this area . these devices must never be thrown away with general industrial or...
Description RF Power Transistors: INDUSTRIAL, SCIENTIFIC, MEDICAL (ISM) & HF COMMUNICATIONS

File Size 46.71K  /  3 Page

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    MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
Part No. DS3930
OCR Text ...Transistors: Interconnect: Gate Oxide Thickness: D6W-2P2M,HPVt,E2,EPROGVt,TCZ ALOCOS:GOI Passivation w/Nov TEOS oxide-nitride 135 x 115 8000 Aluminum / 1% Silicon / 0.5% Copper 150 A ELECTRICAL CHARACTERIZATION DESCRIPTION ESD SENSIT...
Description RELIABILITY REPORT FOR DS3930, REV A1
RELIABILITY REPORT FOR DS3930, REV A1
RELIABILITY REPORT FOR DS3930/ REV A1

File Size 16.75K  /  4 Page

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    ARF1510

Advanced Power Technology
Part No. ARF1510
OCR Text ...d mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domesti...
Description RF POWER MOSFET

File Size 79.23K  /  2 Page

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