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    Advanced Power Electronics
Part No. AP2305AGN
OCR Text ... MODE POWER MOSFET BVDSS RDS(ON) ID -30V 80m - 3.2A Description SOT-23 G D The Advanced Power MOSFETs from APEC provide...off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Curr...
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 99.21K  /  4 Page

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    Advanced Power Electronics
Part No. AP2304GN
OCR Text ... MODE POWER MOSFET BVDSS RDS(ON) ID 25V 117m 2.7A Description SOT-23 G The Advanced Power MOSFETs from APEC provide the de...off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Curr...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 99.43K  /  4 Page

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    Advanced Power Electronics
Part No. AP2304AN
OCR Text ... MODE POWER MOSFET BVDSS RDS(ON) ID 30V 117m 2.5A Description Advanced Power MOSFETs utilized advanced processing techniques to ac...off) tf Ciss Coss Crss Rg Static Drain-Source On-Resistance VGS=10V, ID=2.5A VGS=4.5V, ID=2A V...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 130.97K  /  4 Page

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    ABB SWITZERLAND LTD SEMICONDUCTORS
Part No. 5STF06T1408 5STF06T1208
OCR Text ... = 568 a optimized turn-on and turn-off parameters i tsm = 11.0 ka high operating frequency v to = 2.311 v applications r t = 0.365 m w power switching applications t q = 8.0 s types v rrm , v d...
Description 892 A, 1400 V, SCR
892 A, 1200 V, SCR

File Size 205.82K  /  15 Page

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    Advanced Power Electronics
Part No. AP2302GN
OCR Text ... MODE POWER MOSFET BVDSS RDS(ON) ID 20V 85m 3.2A Description SOT-23 G The Advanced Power MOSFETs from APEC provide the des...off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Curr...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 98.26K  /  4 Page

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    ZXMC3AMC ZXMC3AMCTA

Diodes Incorporated
Part No. ZXMC3AMC ZXMC3AMCTA
OCR Text ...ary device v (br)dss r ds(on) max i d max t a = 25c (notes 4 & 7) q1 30v 120m @ v gs = 10v 3.7a 180m @ v gs = 4.5...off characteristics drain-source breakdown voltage bv dss 30 - - v i d = 250 a, v gs = 0...
Description 30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

File Size 727.69K  /  11 Page

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    2SK2764-01R

FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
Part No. 2SK2764-01R
OCR Text On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 80...Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time R...
Description N-channel MOS-FET

File Size 292.33K  /  2 Page

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    AP2301

Diodes Incorporated
Part No. AP2301
OCR Text ...lity. A 7ms deglitch capability on the open-drain Flag output prevents false over-current reporting and does not require any external compon...OFF GND Available Options Part Number AP2301 AP2311 Channel 1 1 Enable pin (EN) Active Low Act...
Description 2.0A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH

File Size 401.92K  /  18 Page

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    SGS Thomson Microelectronics
Part No. AN1495
OCR Text ...nent magnet rotor and two coils on the stator separated by 90 degrees, as shown in Figure 1. In classical full step operation an equal curre...off for one step period before being turned on in the opposite direction, has been used to double th...
Description MICROSTEPPING STEPPER MOTOR DRIVE USING PEAK DETECTING CURRENT CONTROL

File Size 245.96K  /  20 Page

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