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mobility Datasheet PDF File

For mobility Found Datasheets File :: 592 Search Time::7.875ms
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				Agilent (Hewlett-Packard) Agilent(Hewlett-Packard)
Part No.	MGA-52543-BLK MGA-52543-BLKG MGA-52543-TR1 MGA-52543-TR1G MGA-52543 DEMO-MGA-5X MGA-52543-TR2G
OCR Text	...MT (Pseudomorphic High Electron mobility Transistor) process. It is housed in the SOT-343 (SC70 4-lead) package. This package offers miniature size (1.2 mm by 2.0 mm), thermal dissipation, and RF characteristics. Surface Mount Package SOT-3...
Description	DEMO-MGA-5X · Demonstration circuit board for MGA-52543 and MGA-53543 (2 GHz) MGA-52543 · 5V LNA, 32dBm OIP3, 0.4-6GHz, SOT343(SC-70) Low Noise Amplifier
File Size	193.97K / 15 Page	View it Online	Download Datasheet

				Agilent Technologies
Part No.	MGA-71543-TR1
OCR Text	...MT (Pseudomorphic High Electron mobility Transistor Technology). It is housed in the SOT343 (SC70 4-lead) package. * Bypass switch on chip Loss = -5.6 dB (Id < 5 A) IIP3 = +35 dBm * Adjustable input IP3: 0 to +9 dBm * 2.7 V to 4.2 V operati...
Description	Amplifier, Other - Datasheet Reference From old datasheet system
File Size	231.61K / 24 Page	View it Online	Download Datasheet

				Filtronic Compound Semiconductors
Part No.	LP7512P70
OCR Text	...As) Pseudomorphic High Electron mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances...
Description	PACKAGED ULTRA LOW NOISE PHEMT
File Size	50.22K / 3 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	NE32500 NE27200
OCR Text	...d undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications. FEATURES * Super Low Noise Figure & High Associated Gain NF...
Description	C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
File Size	38.15K / 8 Page	View it Online	Download Datasheet

				FILTRONIC[Filtronic Compound Semiconductors]
Part No.	LP1500SOT223 LP1500SOT2231 LP1500SOT2232 LP1500SOT2233
OCR Text	...As) Pseudomorphic High Electron mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 m by 1500 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The ep...
Description	IC MOSFET DRIVER LS 8A SGL 8SOIC IC MOSFET DRIVER LS 8A SGL 8-DIP IC MOSFET DRVR LS 8A SGL 5TO-263 IC MOSFET DRVR LS 8A SGL 5TO-220 Low Noise/ High Linearity Packaged PHEMT Low Noise, High Linearity Packaged PHEMT
File Size	27.77K / 2 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp. NEC[NEC]
Part No.	NE33284A NE33284A-SL NE33284A-T1 NE33284A-T1A NE33284
OCR Text	... hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for GPS, TVRO and another commercial systems. L 1.78 0.2 1 PACKAGE DIMENSIONS (Unit: mm) FEATURES * Super Low Nois...
Description	L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET L至X波段超低噪声放大器N沟道黄建忠场效应 KJ 6C 6#12 PIN PLUG L至X波段超低噪声放大器N沟道黄建忠场效应
File Size	61.34K / 10 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	NE325S01 NE325S01-T1 NE325S01-T1B
OCR Text	... hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems. PACKAGE DIMENSIONS (Unit: mm) 2.0 0.2 FEATURES * Super Low Noise Figure &...
Description	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
File Size	59.00K / 12 Page	View it Online	Download Datasheet

				N.A.
Part No.	DIB3000
OCR Text	...vior (usage for portability and mobility). Dynamic FFT window positioning gives the circuit the ability to track any change in the channel profile (with post or pre echoes) on a symbol per symbol basis. Accurate channel estimation for high ...
Description	Mobile DVB-T COFDM demodulator
File Size	117.61K / 2 Page	View it Online	Download Datasheet

				Filtronic Compound Semiconductors
Part No.	FPD1500SOT89
OCR Text	...aAs pseudomorphic High Electron mobility Transistor (pHEMT). It utilizes a 0.25 x 1500 m Schottky barrier Gate, defined by highresolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimiz...
Description	LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
File Size	403.26K / 11 Page	View it Online	Download Datasheet

For mobility Found Datasheets File :: 592 Search Time::7.875ms
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