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For mbe Found Datasheets File :: 435 Search Time::2.844ms
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				Tyco Electronics
Part No.	AM42-0007-DIE
OCR Text	...bricated on a mature 0.5 micron mbe based GaAs process. The AM42-0007DIE employs a fully matched chip with integral bias networks and output power detector. This GaAs MMIC power amplifier is ideally suited for used as an output stage or dri...
Description	GaAs MMIC VSAT Power Amplifier 2W 14.0 - 14.5GHz
File Size	504.09K / 2 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) Agilent(Hewlett-Packard)
Part No.	AMMC-5024
OCR Text	...orm gate lengths of 0.15 mm and mbe technology assures precise semiconductor layer control. Absolute Maximum Ratings [1] Symbol Vdd Idd Vg1 Ig1 Vg2 Ig2 Pin Tch Tb Tstg Tmax Parameters/Conditions Positive Drain Voltage Total Drain C...
Description	AMMC-5024 · 30 KHz - 40 GHz GaAs MMIC Traveling Wave Amplifier Agilent AMMC-5024 30 KHz - 40 GHz Traveling Wave Amplifier
File Size	179.27K / 10 Page	View it Online	Download Datasheet

				AVAGO TECHNOLOGIES LIMITED
Part No.	AMMC-5024 AMMC-5024-W10 AMMC-5024-W50
OCR Text	...orm gate lengths of 0.15 mm and mbe technology assuresprecisesemiconductorlayercontrol.Forimproved reliabilityandmoistureprotection,thedieispassivated attheactiveareas. Applications * Communicationsystems * Microwaveinstrumentation * Optica...
Description	30 KHz-40GHz Traveling Wave Amplifier 30 KHz?40 GHz Traveling Wave Amplifier
File Size	224.91K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF620SPBF
OCR Text	...O AS S EMBLY L OT CODE PAR T NU mbe R F 530S DAT E CODE YE AR 0 = 2000 WE EK 02 L INE L OR INT E RNAT IONAL RE CT IF IE R LOGO AS S E MBL Y LOT CODE PART NUMB E R F 530S DAT E CODE P = DE S IGNAT E S LE AD-F RE E PRODUCT (OPT IONAL) YE ...
Description	HEXFET POWER MOSFET (VDSS=200V , RDS(on)=0.80Ω , ID=5.2A ) HEXFET POWER MOSFET (VDSS=200V , RDS(on)=0.80ヘ , ID=5.2A )
File Size	1,817.41K / 9 Page	View it Online	Download Datasheet

				Alpha Industries Inc Alpha Industries, Inc. ALPHA[Alpha Industries] http://
Part No.	AA022N1-00
OCR Text	...T technology, and is based upon mbe layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged reliable part with through-substrate via holes and gold-based back...
Description	214 GHz GaAs MMIC Low Noise Amplifier 21-24 GHz GaAs MMIC Low Noise Amplifier
File Size	116.66K / 2 Page	View it Online	Download Datasheet

				Alpha Industries Inc ALPHA[Alpha Industries] Alpha Industries, Inc.
Part No.	AA022P1-00
OCR Text	...T technology, and is based upon mbe layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged reliable part with through-substrate via holes and gold-based back...
Description	183 GHz GaAs MMIC Power Amplifier 18-23 GHz GaAs MMIC Power Amplifier Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Aluminum; Series:GT; No. of Contacts:26; Connector Shell Size:28; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
File Size	137.51K / 2 Page	View it Online	Download Datasheet

				Alpha Industries Inc ALPHA[Alpha Industries] Alpha Industries, Inc.
Part No.	AA022P2-00
OCR Text	...T technology, and is based upon mbe layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged reliable part with through-substrate via holes and gold-based back...
Description	213 GHz GaAs MMIC Medium Power Amplifier 21-23 GHz GaAs MMIC Medium Power Amplifier Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:26; Connector Shell Size:28; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
File Size	124.07K / 2 Page	View it Online	Download Datasheet

				Alpha Industries Inc ALPHA[Alpha Industries] Alpha Industries, Inc.
Part No.	AA026P1-00
OCR Text	...T technology, and is based upon mbe layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based bac...
Description	259 GHz GaAs MMIC Driver Amplifier 25-29 GHz GaAs MMIC Driver Amplifier Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:35; Connector Shell Size:28; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
File Size	96.88K / 2 Page	View it Online	Download Datasheet

For mbe Found Datasheets File :: 435 Search Time::2.844ms
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