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意法半导
STMicroelectronics
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| Part No. |
M93C46-DS3G_S M93C46-DS3G_W M93C46-DS3P_S M93C46-DS3P_W M93C46-DS3TG_S M93C46-DS3TG_W M93C46-DS3TP_S M93C46-DS3TP_W M93C46-DS6G_S M93C46-DS6G_W M93C46-DS6P_W M93C46-DS6TG_S M93C46-DS6TG_W M93C46-DS6TP_S M93C46-DS6TP_W M93C46-DW3G_S M93C46-DW3G_W M93C46-DW3P_S M93C46-DW3P_W M93C46-RMB3G_S M93C46-RMB3G_W M93C46-RMB3P_S M93C46-RMB3P_W M93C46-RMB3TG_S M93C46-RMB3TG_W M93C46-RMB3TP_S M93C46-RMB3TP_W M93C46-RMB6G_S M93C46-RMB6G_W M93C46-RMB6P_S M93C46-RMB6P_W M93C46-RMB6TG_S M93C46-RMB6TG_W M93C66-MB3G_S M93C66-MB3G_W M93C66-MB3P_S M93C66-MB3P_W M93C66-MB3TG_S M93C66-MB3TG_W M93C66-MB3TP_S M93C66-MB3TP_W M93C66-MB6G_S M93C66-MB6G_W M93C66-MB6P_S M93C66-MB6P_W M93C66-MB6TG_S M93C66-MB6TG_W M93C66-RMB3G_S M93C66-RMB3G_W M93C66-RMB3P_S M93C66-RMB3P_W M93C66-RMB3TG_S M93C66-RMB3TG_W M93C66-RMB3TP_S M93C66-RMB3TP_W M93C66-RMB6G_S M93C66-RMB6G_W M93C76-MB3G_S M93C76-MB3G_W M93C76-MB3P_S M93C76-MB3P_W M93C76-MB3TG_S M93C76-MB3TG_W M93C76-MB3TP_S M93C76-MB3TP_W M93C76-MB6G_S M93C76-MB6G_W M93C76-MB6P_S M93C76-MB6P_W M93C76-MB6TG_S M93C76-MB6TG_W M93C76-RMB3G_S M93C76-RMB3G_W M93C76-RMB3P_S M93C76-RMB3P_W M93C76-RMB3TG_S M93C76-RMB3TG_W M93C76-RMB3TP_S M93C76-RMB3TP_W M93C76-RMB6G_S M93C76-RMB6G_
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| Description |
256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
512 X 16 MICROWIRE BUS SERIAL EEPROM, DSO8
1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRESerial acceSS EEPROM
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE? Serial acceSS EEPROM
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE庐 Serial acceSS EEPROM
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE垄莽 Serial acceSS EEPROM
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| File Size |
278.87K /
38 Page |
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意法半导
EEPROM
STMicroelectronics N.V.
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| Part No. |
M24C08-W M24C08-R M24C08-WMN6 M24C08-WMN6TP M24C04WMN1T M24C04WMN3T M24C04WMN6T M24C02-WMN3_S M24C02-WMN3G_S M24C02-WMN3P M24C02-WMN3P_S M24C02-WMN3T_S M24C02-WMN3TG_S M24C02-WMN6_W M24C04-WMN6 M24C04-LBN6T M24C04-LBN3T M24C02 M24C01 M24C08 M24C04-LMN3T M24C04-LMN6T M24C08-RBN6 M24C08-RBN3/W M24C08-RBN6/W M24C08-RBN6T M24C08-RBN3P M24C08-RBN3T M24C08-RBN6G M24C08-RBN6/S M24C08-RBN3/S M24C08-RBN3G M24C08-RBN6P M24C16-DW6T M24C16-DW3T M24C16-SDW6T M24C16-SDW3T M24C16-SDS3T M24C16-SDS6T M24C04-WBN6TP/W M24C08-MN6T M24C08-MN3T M24C02-WBN6T/W M24C04-RMN3T/W M24C04-RBN6TP/W M24C04-WBN6TP/S M24C08-WDS3 M24C08-WDS3G M24C08-WDS6 M24C08-WMN6TP/W M24C08-WDW6P M24C04-RMN6TP/S M24C08-WDS6G M24C08-WDS6P M24C08-WDW6G M24C08-WDW3 M24C08-RBN6T/W M24C08-WDW3P M24C08-WDS3/W M24C04-RMN3TP/S M24C08-WDW3G M24C08-WDS3/S M24C01-RBN6TP/W M24C08-WDS3P M24C01-WMN3TP/S M24C01-WDW6TP/S M24C01-WMN6TP/S M24C01-RBN3TP/S M24C04-RBN6T/W M24C04-RDS3G M24C04-WBN6T/W M24C04-RDS6P M24C04-RDW3 M24C04-RDW6 M24C04-WMN6TP/W M24C04-RDS6T M24C04-RDS3T M24C04-RDS6G M24C02-WMN3/S M24C02-WMN6/W M24C08-WBN3G/S M24C16-WBN3G/S M24C16-RBN3G/S M24C01-RBN3G/S M24C01-WBN3G/S M24C02-RBN3G/S M24C02-WBN3G/S M24C04-RBN3G/S M24C04-WBN3G/S
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| Description |
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C BuS EEPROM
MicroproceSSor CryStal; Frequency:22.1184MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; CryStal TerminalS:Radial Leaded; ESR:40ohm; Leaded ProceSS Compatible:YeS; Mounting Type:Through Hole; OScillator Type:TCXO RoHS Compliant: YeS
MicroproceSSor CryStal; Frequency:48MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; CryStal TerminalS:Radial Leaded; ESR:25ohm; Leaded ProceSS Compatible:YeS; Mounting Type:Through Hole; No. of PinS:2 RoHS Compliant: YeS
CRYSTAL 9.84375MHZ 10PF SMD
UHF power tranSiStor
NPN 2 GHz RF power tranSiStor - @ f: 1900 MHz; @ f1: 1900 ; G<Sub>UMSub>: 7 dB; G<Sub>UMSub> @ f1: 7 dB; I<Sub>CSub>: 250 mA; P<Sub>totSub>: 250 mW; Polarity: NPN ; VCEO max: 8 V
CRYSTALS 20/0.035 -40 85 12.5P 32.768KHZ 3.2X1.5X0.8MM 2 PAD
MMIC variable gain amplifier
AB 3C 3#12 SKT RECP
MicroproceSSor CryStal; Frequency:8.192MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; CryStal TerminalS:Radial Leaded; ESR:35ohm; Leaded ProceSS Compatible:YeS; Mounting Type:Through Hole; No. of PinS:2 RoHS Compliant: YeS
MicroproceSSor CryStal; Frequency:8MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; CryStal TerminalS:Radial Leaded; ESR:35ohm; Leaded ProceSS Compatible:YeS; Mounting Type:Through Hole; No. of PinS:2 RoHS Compliant: YeS
Single 10 bitS ADC, up to 30 MHz, 40 MHz or 50 MHz, with voltage regulator
Schottky barrier double diodeS - C<Sub>dSub> max.: 100@VR=4V pF; Configuration: dual c.a. ; I<Sub>FSub>: 1 A; I<Sub>FSMSub> max: 10 A; I<Sub>RSub> max: 1@VR=25V mA; V<Sub>FSub>max: 450@IF=1A mV; V<Sub>RSub>: 25 V
XTL, OSC, 50.000 MHZ, 100PPM
MicroproceSSor CryStal; Frequency:27MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; CryStal TerminalS:Radial Leaded; ESR:40ohm; Leaded ProceSS Compatible:YeS; Mounting Type:Through Hole; OScillator Type:TCXO RoHS Compliant: YeS
Schottky barrier diode - C<Sub>dSub> max.: 10@VR=1V pF; Configuration: Single ; I<Sub>FSub> max: 200 mA; I<Sub>FSMSub> max: 300 A; I<Sub>RSub> max: 2.3@VR=25VA; V<Sub>FSub>max: 400@IF=10mA mV; V<Sub>RSub> max: 30 V
CONNECTOR ACCESSORY
PNP/PNP matched double tranSiStorS
IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,SIP
AB 17C 17#16 PIN RECP
45 V, 100 mA NPN general-purpoSe tranSiStorS
NPN/PNP general purpoSe tranSiStor - DeScription: Matched Pair
IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,M:ML043MW015
CRYSTAL 4.897MHZ 20PF SMD
ThyriStorS - I<Sub>GTSub>: 32 mA; I<Sub>TSub> (R<Sub>MSSub>): 20 A; V<Sub>DRMSub>: 650 V
ThyriStorS - I<Sub>GTSub>: 32 mA; I<Sub>TSub> (R<Sub>MSSub>): 20 A; V<Sub>DRMSub>: 800 V
POT 200 OHM 3/4 RECT CERM MT
ThyriStorS logic level for RCD/GFI/LCCB applicationS - I<Sub>GTSub>: 0.2 (min 0.02) mA; I<Sub>TSub> (R<Sub>MSSub>): 0.8 A; V<Sub>DRMSub>: 500 V
ThyriStorS logic level for RCD/GFI/LCCB applicationS - I<Sub>GTSub>: 0.2 (min 0.02) mA; I<Sub>TSub> (R<Sub>MSSub>): 0.8 A; V<Sub>DRMSub>: 600 V
MicroproceSSor CryStal; Frequency:50MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; CryStal TerminalS:Radial Leaded; ESR:25ohm; Leaded ProceSS Compatible:YeS; Mounting Type:Through Hole; No. of PinS:2 RoHS Compliant: YeS
MicroproceSSor CryStal; Frequency:6MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; CryStal TerminalS:Radial Leaded; ESR:40ohm; Leaded ProceSS Compatible:YeS; Mounting Type:Through Hole; No. of PinS:2 RoHS Compliant: YeS
MicroproceSSor CryStal; Frequency:5MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; CryStal TerminalS:Radial Leaded; ESR:50ohm; Leaded ProceSS Compatible:YeS; Mounting Type:Through Hole; No. of PinS:2 RoHS Compliant: YeS
PowerMOS tranSiStor Logic level TOPFET - @ V<Sub>ISSub>: 5 V; I<Sub>DSub>: 15 A; Number of pinS: 3 ; R<Sub>DS(on)Sub>: 0.125 mOhm; V<Sub>DSSub>max: 50 V
Solder MaSking Agent; DiSpenSing Method:Jar; FeatureS:For Lead-Free ApplicationS; USed w/Tin/Lead SolderS; ProvideS Short-Term High-Temp. Protection; Leaded ProceSS Compatible:YeS; Volume:1gallon (US) RoHS Compliant: YeS
CRYSTAL 6.7458MHZ 20PF SMD
MicroproceSSor CryStal; Frequency:3.579545MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; CryStal TerminalS:Radial Leaded; ESR:180ohm; Leaded ProceSS Compatible:YeS; Mounting Type:Through Hole; OScillator Type:TCXO RoHS Compliant: YeS
RES ARRAY 24 OHM 8TRM 4RES SMD
SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR - 15kV/uS; Package: SOIC-W; No of PinS: 8; Container: Box
NPN 5 GHz wideband tranSiStor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; @ IC: 14 mA; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; GUM @ f2: 8 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; NoiSe figure: 3@f22.1@f1 dB; Ptot: 300
High-Speed Switching diodeS - Cd max.: 1.5 pF; Configuration: quad c.c./c.c. ; IF max: 250 mA; IFSM max: 4 A; IR max: 500@VR=80V nA; IFRM: 450 mA; trr max: 4 nS; VFmax: 1@IF=50mA mV; VR max: 100 V
ThyriStorS logic level for RCD/GFI/LCCB applicationS - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V
Low-leakage diode - Cd max.: 2 pF; Configuration: Single ; IF max: 200 mA; IFSM max: 4 A; IR max: 5@VR=75V nA; IFRM: 500 mA; trr max: 3000 nS; VFmax: 1@IF=10mA mV; VR max: 75 V
Low-leakage diode - Cd max.: 4 pF; Configuration: Single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 nS; VFmax: 1@IF=100mA mV; VR max: 125 V
NPN 7GHz wideband tranSiStor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 100 mA; fT: 7 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 150 mA; Ptot: 1000 mW; Polarity: NPN ; VCE: 10 V; V<Su
ThyriStorS - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V
NPN 2 GHz RF power tranSiStor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; VCEO max: 8 V
Schottky barrier double diodeS - Cd max.: 100@VR=4V pF; Configuration: dual SerieS ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: Single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
ThyriStorS logic level - IGT: 0.2 mA; IT (RMS): 8 A; VDRM: 500 V
ThyriStorS - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V
Schottky barrier double diodeS - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
Schottky barrier diode - Cd max.: 90@VR=0V pF; Configuration: Single ; IF: 0.5 A; IFSM max: 2 A; IR max: 0.1@VR=35V mA; VFmax: 550@IF=0.5A mV; VR: 40 V
AB 4C 4#12 PIN PLUG
Single 12 bitS ADC, up to 40 MHz, 55 MHz or 70 MHz
Silicon PIN diode
NPN 14 GHz wideband tranSiStor
PowerMOS tranSiStor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pinS: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V
HDWR PLATE SER 3 FRNT MNT BLK
OSCILLATORS 50PPM 0 70 3.3V 4 33.000MHZ TS 5X7MM 4PAD SMD
ThyriStorS; logic level for RCD/GFI/LCCB applicationS - IGT: 0.2 (min 0.02) mA; IT (RMS): 1.0 A; VDRM: 600 V
ThyriStor logic level - IGT: 0.05 mA; IT (RMS): 0.8 A; VDRM: 400 V; VRRM: 400 V
ThyriStorS logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 200 V
ThyriStorS logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 400 V
16KbitKbitKbitKbit1Kbit串行I2C总线的EEPROM
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
Single 10 bitS ADC, up to 30 MHz, 40 MHz or 50 MHz 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
8-Pin SOIC High Speed - 10 MBit/S Logic Gate Output Optocoupler 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOS
HDWR SPACER REAR MNT SER 3 BLK 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
AB 7C 7#12 PIN PLUG 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
RECTIFIER SBR DUAL 40A 40V 280A-ifSm 530mV-vf 0.5mA-ir ITO-220AB 50/TUBE 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
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| File Size |
144.80K /
25 Page |
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it Online |
Download Datasheet |
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