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losses Datasheet PDF File

For losses Found Datasheets File :: 23967 Search Time::1.235ms
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				STMicroelectronics N.V.
Part No.	STTH8006 STTH8006W
OCR Text	...educes switching and conduction losses Description The STTH8006, which is using ST Turbo 2 600V technology, is specially suited for use in switching power supplies, and industrial applications, as rectification and discontinuous mode PF...
Description	Turbo 2 ultrafast high voltage rectifier 涡轮2超快高压整流
File Size	75.49K / 6 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF7807VD1
OCR Text	...p to 5A Output * Low Conduction losses * Low Switching losses * Low Vf Schottky Rectifier Description The FETKYTM family of Co-Pack HEXFETMOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switchi...
Description	Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:SP06; Number of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight FETKY⑩MOSFET肖特基二极管 FETKY MOSFET / SCHOTTKY DIODE FETKY⑩ MOSFET / SCHOTTKY DIODE
File Size	116.12K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7807VD2 IRF7807VD2TR
OCR Text	...p to 5A Output * Low Conduction losses * Low Switching losses * Low Vf Schottky Rectifier Description The FETKYTM family of Co-Pack HEXFETMOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switchi...
Description	30V FETKY - MOSFET and Schottky Diode in a SO-8 package FETKY MOSFET / SCHOTTKY DIODE FETKY⑩ MOSFET / SCHOTTKY DIODE
File Size	113.54K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7807V
OCR Text	losses Low Switching losses S S S G 1 8 7 A D D D D Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduction of conduction...
Description	N Channel Application Specific MOSFET
File Size	126.34K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7807 IRF7807A IRF7807ATR IRF7807TR
OCR Text	...DC-DC Converters Low Conduction losses Low Switching losses S S S G 1 8 7 A D D D D 2 3 6 Description These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and...
Description	8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET Chip-Set for DC-DC Converters 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	238.61K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7811AV IRF7811AVTR
OCR Text	...DC-DC Converters Low Conduction losses Low Switching losses Minimizes Parallel MOSFETs for high current applications S S S G 1 8 7 A A D D D D 2 Description This new device employs advanced HEXFET Power MOSFET technology t...
Description	Si, SMALL SIGNAL, FET, MS-012AA N-Channel Application-Specific MOSFETs
File Size	85.36K / 6 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7811A IRF7809A IRF7811ATR
OCR Text	...DC-DC Converters Low Conduction losses Low Switching losses Minimizes Parallel MOSFETs for high current applications HEXFET(R) Chipset for DC-DC Converters S S S G 1 8 7 A A D D D D 2 Description These new devices employ advan...
Description	PROVISIONAL DATASHEET Chipset for DC-DC Converters 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	124.48K / 4 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	DSEI20-12A
OCR Text	... 94V-0. Extremely low switching losses International standard package JEDEC TO-220 AC q q q q q q q Symbol IFRMS IFAVM x IFRM IFSM Test Conditions TVJ = TVJM TC = 85C; rectangular, d = 0.5 tP < 10 s; rep. rating, pulse width limit...
Description	Fast Recovery Epitaxial Diode
File Size	73.02K / 2 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFU3711ZPBF IRFR3711ZPBF
OCR Text	...ion has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these conduction losses are on...
Description	HEXFET Power MOSFET
File Size	261.11K / 12 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4BC30FD1PBF
OCR Text	... 480V VGE = 15V, RG = 23 Energy losses inlcude "tail" and diode reverse recovery. See Fig. 9, 10, 11, 18 See Fig. 9,10,11,18 IC = 17A, VCC = 480V VGE = 15V, RG = 23 Energy losses inlcude "tail" and diode reverse recovery. Measured 5mm from ...
Description	Fast CoPack IGBT
File Size	415.12K / 11 Page	View it Online	Download Datasheet

For losses Found Datasheets File :: 23967 Search Time::1.235ms
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