| |
|
 |
NEC Electronics NEC Corp. NEC[NEC]
|
| Part No. |
03P6MG 03P4MG 03P4MG-T
|
| OCR Text |
...Temperature TA (C)
Figure 7. igs vs. Example of Characteristics
10
Figure 8. GT vs. Example of Characteristics
1.0 TA = 25C
Supply Gate Trigger Current igs (mA)
TA = 25C
Gate Trigger Voltage GT (V)
1000
5
igs RGK 1... |
| Description |
300 mA HIGH-WITHSTANDING-VOLTAGE MOLD SCR 300mA high-withstanding-voltage mold SCR
|
| File Size |
153.39K /
6 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
Agilent (Hewlett-Packard) ETC[ETC]
|
| Part No. |
ATF-521P8-TR2 ATF-521P8-TR1 ATF-521P8-BLK
|
| OCR Text |
...ngs [1] Symbol
VDS VGS VGD IDS igs Pdiss Pin max. TCH TSTG ch_b
Parameter
Drain - Source Voltage [2] Gate - Source Voltage [2] Gate Drain Voltage [2] Drain Current [2] Gate Current Total Power Dissipation [3] RF Input Power Channel Tem... |
| Description |
ATF-521P8 · Single Voltage E-pHEMT Low Noise 42 dBm OIP3 in LPCC High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package
|
| File Size |
244.22K /
24 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
HP[Agilent(Hewlett-Packard)]
|
| Part No. |
ATF-54143-TR2 ATF-54143-BLK ATF-54143-TR1
|
| OCR Text |
...
VDS VGS VGD IDS Pdiss Pin max. igs TCH TSTG jc
120
0.7V
Parameter
Drain - Source Voltage [2] Gate - Source Voltage [2] Gate Drain Voltage [2] Drain Current [2] Total Power Dissipation [3] RF Input Power Gate Source Current Channel Te... |
| Description |
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
|
| File Size |
146.82K /
16 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
| Part No. |
ATF-541M4-TR2 ATF-541M4 ATF-541M4-BLK ATF-541M4-TR1 DEMO-ATF-5X1M4A
|
| OCR Text |
...ngs [1] Symbol
VDS VGS VGD IDS igs Pdiss Pin max. TCH TSTG jc
Parameter
Drain-Source Voltage [2] Gate-Source Voltage [2] Gate Drain Voltage [2] Drain Current [2] Gate Current [5] Total Power Dissipation [3] RF Input Power[5] Channel Te... |
| Description |
ATF-541M4 · Single Voltage E-pHEMT Low Noise 36 dBm OIP3 in MiniPak DEMO-ATF-5X1M4A · Demonstration circuit board for ATF-541M4 and ATF-551M4 (2 GHz) Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package
|
| File Size |
160.23K /
16 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
SUTEX[Supertex, Inc]
|
| Part No. |
HV732
|
| OCR Text |
... = -25V VGS = -10V, IDS = -1.0A igs = -100A igs = -2.0A --IDS = -1.0mA VGS = 0V, VDS = -25V, f = 1Mhz
Output N-Channel MOSFET, TXN
Symbol IOUT RON RGS VGS VGSF VGS(th) CISS COSS Parameter Output saturation current Channel resistance Gat... |
| Description |
High Speed 【100V 2A Integrated Ultrasound Pulser
|
| File Size |
249.65K /
10 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
| Part No. |
STU9NC90ZI STU8NC90Z STU8NC90ZI 7291
|
| OCR Text |
...VDS VDGR VGS ID ID IDM (1) PTOT igs VESD(G-S) dv/dt(q) VISO Tstg Tj Parameter STU8NC90Z Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25C Drain Current (continuos) at T... |
| Description |
7 A, 900 V, 1.38 ohm, N-CHANNEL, Si, POWER, MOSFET N-CHANNEL 900V - 1.1ohm - 7.6A Max220/I-Max220 Zener-Protected PowerMESH?III MOSFET N-CHANNEL 900V - 1.1ohm - 7.6A Max220/I-Max220 Zener-Protected PowerMESH⑩III MOSFET N-CHANNEL 900V - 1.1ohm - 7.6A Max220/I-Max220 Zener-Protected PowerMESHIII MOSFET OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN From old datasheet system
|
| File Size |
411.78K /
10 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|