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  id-5.3a Datasheet PDF File

For id-5.3a Found Datasheets File :: 64    Search Time::1.453ms    
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    IRFP044N

International Rectifier, Corp.
Power MOSFET
IRF[International Rectifier]
Part No. IRFP044N
OCR Text ...S = 55V RDS(on) = 0.020 G ID = 53A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with th...
Description Power MOSFET(Vdss=55V, Rds(on)=0.020ohm, Id=53A) 功率MOSFET(减振钢板基本\u003d 55V的,的Rds(on)\u003d 0.020ohm,身份证\u003d 53A条)
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package

File Size 101.37K  /  8 Page

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    IRF[International Rectifier]
Part No. IRFIZ48N IRFIZ48 IRFIZ48NPBF
OCR Text ...G VDSS = 55V RDS(on) = 0.016 ID = 36A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced process...53A I D , Drain-to-Source Current (A) 2.0 100 TJ = 175C 10 1.5 TJ = 25C 1.0 ...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=36A)

File Size 107.92K  /  8 Page

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    IRF1010Z IRF1010ZL IRF1010ZS

IRF[International Rectifier]
Part No. IRF1010Z IRF1010ZL IRF1010ZS
OCR Text ...riety of other applications. ID = 75A TO-220AB IRF1010Z D2Pak IRF1010ZS Max. 94 66 75 360 140 0.90 20 TO-262 IRF1010ZL Units ...53A 75A ID RG VGS 20V D.U.T IAS tp + V - DD 150 A 0.01 100 Fig 12a. Unc...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET

File Size 298.51K  /  12 Page

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    IRF[International Rectifier]
Part No. IRFZ46NSPBF IRFZ46NLPBF
OCR Text ...for lowprofile applications. ID = 53A S D 2 P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous...
Description    HEXFET Power MOSFET

File Size 671.32K  /  10 Page

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    IRFP064V

International Rectifier
Part No. IRFP064V
OCR Text ... = 60V RDS(on) = 5.5m G S ID = 130A Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techn...53A 92A 130A RG 20V D .U .T IA S tp 0 .01 + - VD D A 300 Fig 12a. Unclamped Indu...
Description From old datasheet system
Power MOSFET(Vdss=60V, Rds(on)=5.5mohm, Id=130A)

File Size 152.71K  /  8 Page

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    IRFIZ48NPBF

International Rectifier
Part No. IRFIZ48NPBF
OCR Text ... RDS(on) = 0.016 D G S ID = 40A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing t...53A I D , Drain-to-Source Current (A) 2.0 100 TJ = 175C 10 1.5 TJ = 25C 1.0 ...
Description POWER MOSFET

File Size 268.80K  /  9 Page

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    IRFP4368PBF

International Rectifier
Part No. IRFP4368PBF
OCR Text ...ET D VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggednes...53A BOTTOM 195A TOP 4.0 Energy (J) 3.0 1000 2.0 500 1.0 0.0 10 20 30 40 50 60 ...
Description HEXFET Power MOSFET

File Size 275.42K  /  8 Page

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    SUP53P06-20 SUP53P06-20-E3

Vishay Siliconix
Part No. SUP53P06-20 SUP53P06-20-E3
OCR Text ... - 4.5 V TO-220AB FEATURES ID (A)a - 53 - 42 Qg (Typ.) 76 nC * TrenchFET(R) Power MOSFET * 100 % UIS Tested RoHS COMPLIANT AP...53a - 46.8 9.2b - 8.1b - 150 - 45 101 69 a Unit V A mJ A 2.1b 104.2a 66.7a 3.1b 2.0b - ...
Description P-Channel 60-V (D-S) MOSFET

File Size 130.83K  /  6 Page

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    SI1450DH-T1-E3 SI1450DH08 SI1450DH-08

Vishay Siliconix
Part No. SI1450DH-T1-E3 SI1450DH08 SI1450DH-08
OCR Text ...GS = 1.8 V 0.069 at VGS = 1.5 V ID (A)a 4.0a 4.0a 4.0 4.0 a a FEATURES Qg (Typ) * TrenchFET(R) Power MOSFET: 1.5 V Rated * 100 % Rg ...53a 3.62a 15 2.3 1.3c 2.78 1.78 1.56b, c 1.0b, c - 55 to 150 260 Unit V Continuous Drain Current ...
Description N-Channel 8-V (D-S) MOSFET

File Size 117.56K  /  7 Page

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    SI1450DH

Vishay Siliconix
Part No. SI1450DH
OCR Text ...GS = 1.8 V 0.069 at VGS = 1.5 V ID (A)a 4.0a 4.0a 4.0 4.0 a a FEATURES Qg (Typ) * TrenchFET(R) Power MOSFET: 1.5 V Rated * 100 % Rg ...53a 3.62a 15 2.3 1.3c 2.78 1.78 1.56b, c 1.0b, c - 55 to 150 260 Unit V Continuous Drain Current ...
Description N-Channel 8-V (D-S) MOSFET

File Size 118.33K  /  7 Page

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For id-5.3a Found Datasheets File :: 64    Search Time::1.453ms    
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