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8A080T0 C229D 3AX103V3 35300 BZM55B18 317AK MEGA3 FDB2502P
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  id-5.1a Datasheet PDF File

For id-5.1a Found Datasheets File :: 9421    Search Time::2.109ms    
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    2SJ578

SANYO[Sanyo Semicon Device]
Part No. 2SJ578
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% 1 : Gate 2 : Drain 3 : Source SANYO : PCP Conditions Ratings -60 20 -1 -4 1.3 3.5 150 -55 to +150 Unit V V A A W W C C Mounted on a ceramic board (250mm...
Description Ultrahigh-Speed Switching Applications

File Size 41.15K  /  4 Page

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    2SJ580

Sanyo Semicon Device
Part No. 2SJ580
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (250mm2!0.8mm) Tc=25C Conditions Ratings Unit -60 20 --1.8 --7.2 1.5 3.5 150 V V A A W W C C --55 to +150 Electrical Characteristics ...
Description Ultrahigh-Speed Switching Applications

File Size 29.05K  /  4 Page

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    US5U29

Rohm
Part No. US5U29
OCR Text ...ous Pulsed Symbol VDSS VGSS ID IDP IS ISP Tch Limits -20 12 1 4 -0.4 -4 150 Unit V V A A A A C PW 10s DUTY CYCLE 1% PW 10s DUTY ...5 0.5 Max. 10 - -1 -2.0 390 430 800 - - - - - - - - - - - Unit A V A V m m m S pF pF pF ns ns ...
Description Small switching (-20V, -1.5A)

File Size 85.47K  /  5 Page

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    2SJ597

SANYO[Sanyo Semicon Device]
Part No. 2SJ597
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions Ratings --60 20 --4 --16 1 15 150 --55 to +150 Unit...5 --4.0 ID -- VDS V 0.0 . --4 0V Drain Current, ID -- A --8 ID -- VGS VDS= --10V =-25 ...
Description P-Channel Silicon MOSFET DC / DC Converter Applications

File Size 30.93K  /  4 Page

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    US5U291 US5U29

ROHM[Rohm]
Part No. US5U291 US5U29
OCR Text ...tinuous Pulsed Symbol VDSS VGSS ID IDP 1 IS ISP 1 Tch PD 3 VRM VR IF IFSM Tj PD Limits -20 12 1 4 -0.4 -4 150 0.7 25 20 0.7 3.0 150 0.5 1.0 -55 to +150 Unit V V A A A A C W / ELEMENT V V A A C W / ELEMENT W / TOTAL C 2 3 PD 3 Tstg ...
Description 2.5V Drive Pch SBD MOS FET

File Size 76.27K  /  5 Page

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    CET
Part No. CEB02N7 CEP02N7
OCR Text ...0V 700V RDS(ON) 6.6 6.6 6.6 6.6 ID 1.9A 1.9A 1.9A 1.9A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). H...5.4 -55 to 150 1.9 6 e e A A W W/ C mJ A mJ C Maximum Power Dissipation @ TC = 25 C - Derate ...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 125.86K  /  4 Page

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    CEM4279

Chino-Excel Technology
Part No. CEM4279
OCR Text ... otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg N-Channel 40 P-Channel -40 Units V V A A W C 20 6.1 24 2.0 -55 to 150 20 -4.3 -17 ...5 Units C/W Details are subject to change without notice . 1 Rev 2. 2007.Jan http://www.cetsem...
Description Dual Enhancement Mode Field Effect Transistor (N and P Channel)

File Size 489.65K  /  7 Page

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    CET
Part No. CEB02N6A CEI02N6A CEF02N6A CEP02N6A
OCR Text ...0V 650V RDS(ON) 7.5 7.5 7.5 7.5 ID 1.5A 1.5A 1.5A 1.5A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 packa...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 126.50K  /  4 Page

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    CET
Part No. CEB01N6 CEF01N6 CEP01N6
OCR Text ...V 650V 650V RDS(ON) 15 15 15 15 ID 1A 1A 1A 1A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power a...5 62.5 Limit 4.5 65 Units C/W C/W Rev 1. 2005.December 1 http://www.cetsemi.com CEP01N6...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 85.12K  /  4 Page

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    2SK975

HITACHI[Hitachi Semiconductor]
Part No. 2SK975
OCR Text ...duty cycle 1% Symbol VDSS VGSS ID I D(pulse)* I DR Pch Tch Tstg 1 Ratings 60 20 1.5 4.5 1.5 900 150 -55 to +150 Unit V V A A A mW C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source br...
Description Silicon N-Channel MOS FET

File Size 40.51K  /  8 Page

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