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UN2111 0015474 1556A 1N5380A CZMK8V2 WL54240 MC33984 P4SMAJ20
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  high-effciency Datasheet PDF File

For high-effciency Found Datasheets File :: 1161    Search Time::3.031ms    
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    CMPA601C025D

Cree, Inc
Part No. CMPA601C025D
OCR Text high electron mobility transistor (hemt) based monolithic microwave integrated circuit (mmic) on a silicon carbide substrate, using a 0.25...effciency @ 6 ghz pae 23.0 30 C % v dd = 28 v, i dq = 2.4 a, p in = 19 dbm power added effciency...
Description 25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier

File Size 382.51K  /  6 Page

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    CMPA5585025F CMPA5585025F-AMP CMPA5585025F-TB

Cree, Inc
Part No. CMPA5585025F CMPA5585025F-AMP CMPA5585025F-TB
OCR Text high electron mobility transistor (hemt) based monolithic microwave integrated circuit (mmic). gan has superior properties compared to sil...effciency 1 30 25 20.5 19 19.5 % note 1 : measured at -30 dbc, 1.6 mhz from carrier, in the cmpa5585...
Description 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier

File Size 1,885.30K  /  19 Page

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    CMPA2735075F CMPA2735075F-TB

Cree, Inc
Part No. CMPA2735075F CMPA2735075F-TB
OCR Text high electron mobility transistor (hemt) based monolithic microwave integrated circuit (mmic). gan has superior properties compared to sil...effciency 1 pae C 54 C % v dd = 28 v, i dq = 700 ma, freq = 2.9 ghz power added effciency 2 pae 45...
Description 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

File Size 1,973.94K  /  10 Page

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    CMPA2735075D

Cree, Inc
Part No. CMPA2735075D
OCR Text high electron mobility transistor (hemt) based monolithic microwave integrated circuit (mmic). gan has superior properties compared to sili...effciency 1 pae 51 59 C % v dd = 28 v, i dq = 800 ma, frequency = 2.9 ghz power added effciency 2...
Description 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

File Size 260.93K  /  7 Page

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    CMPA2560025F-AMP CMPA2560025F-TB CMPA2560025F-15

Cree, Inc
Part No. CMPA2560025F-AMP CMPA2560025F-TB CMPA2560025F-15
OCR Text high electron mobility transistor (hemt) based monolithic microwave integrated circuit (mmic). gan has superior properties compared to sil...effciency 1 pae 34 40 C % v dd = 28 v, i d = 1200 ma, p in = 26 dbm, freq = 4.0 ghz power added e...
Description 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier

File Size 839.29K  /  11 Page

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    CMPA2060025D

Cree, Inc
Part No. CMPA2060025D
OCR Text high electron mobility transistor (hemt) based monolithic microwave integrated circuit (mmic). gan has superior properties compared to sil...effciency, 1 pae1 19 41 C % v dd = 28 v, i dq = 1200 ma, p in = 23 dbm, freq = 2.5 ghz powe...
Description 25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier

File Size 299.29K  /  7 Page

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    CMPA1D1E025F CMPA1D1E025F-AMP

Cree, Inc
Part No. CMPA1D1E025F CMPA1D1E025F-AMP
OCR Text high electron mobility transistor (hemt) based monolithic microwave integrated circuit (mmic) on a silicon carbide (sic) substrate, using ...effciency while meets oqpsk linearity required for satcom applications at 3db backed off psat op...
Description 25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier

File Size 3,850.30K  /  17 Page

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    CMPA0060025F CMPA0060025F-AMP CMPA0060025F-TB

Cree, Inc
Part No. CMPA0060025F CMPA0060025F-AMP CMPA0060025F-TB
OCR Text high electron mobility transistor (hemt) based monolithic microwave integrated circuit (mmic). gan has superior properties compared to sil...effciency @ p in = 32 dbm 63 55 40 31 33 31 28 26 % note 1 : v dd = 50 v, i dq = 500 ma figure 1...
Description 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier

File Size 1,859.58K  /  11 Page

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    CMPA0060025D

Cree, Inc
Part No. CMPA0060025D
OCR Text high electron mobility transistor (hemt) based monolithic microwave integrated circuit (mmic). gan has superior properties compared to sil...effciency, 1 pae1 18 33 C % v dd = 50 v, i dq = 500 ma, p in = 32 dbm, freq = 4.0 ghz power add...
Description 25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier

File Size 474.47K  /  7 Page

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    LT3640-15

Linear Technology
Part No. LT3640-15
OCR Text ...ipple burst mode ? to maintain high effciency and low output ripple. the high voltage channel is a nonsynchronous buck with an internal 2.4a top switch that operates from an input of 4v to 35v; a 36.5v ovlo protects the device to 55v. ...
Description Dual Monolithic Buck Regulator with Power-On Reset and Watchdog Timer

File Size 502.10K  /  24 Page

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For high-effciency Found Datasheets File :: 1161    Search Time::3.031ms    
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