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  held effect power transistor Datasheet PDF File

For held effect power transistor Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    IRFD112 IRFD113

GE Solid State
Part No. IRFD112 IRFD113
Description (IRFD112 / IRFD113) power-MOSFET FIELD effect power transistor

File Size 135.03K  /  2 Page

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    MTD6N15 MTD6N15-1 MTD6N15T4 MTD6N15T4G

ON Semiconductor
Part No. MTD6N15 MTD6N15-1 MTD6N15T4 MTD6N15T4G
Description power Field effect transistor DPAK for Surface Mount
TMOS power 150V .3R

File Size 88.70K  /  8 Page

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    ERICSSON power MODULES AB
Ericsson Microelectronics
Part No. PTF10020
Description 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF power, MOSFET
125 Watts/ 860-960 MHz GOLDMOS Field effect transistor
125 Watts, 86060 MHz GOLDMOS Field effect transistor

File Size 313.64K  /  6 Page

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    MRF21180R6 MRF21180

Freescale (Motorola)
MOTOROLA[Motorola Inc]
Motorola, Inc
Part No. MRF21180R6 MRF21180
Description 2170 MHz, 170 W, 28 V Lateral N-Channel RF power MOSFET
RF power Field effect transistor

File Size 516.52K  /  12 Page

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    ADVANCED SEMICONDUCTOR INC
Part No. MRF137
Description UHF BAND, Si, N-CHANNEL, RF power, MOSFET
From old datasheet system
RF power FIELD-effect transistor

File Size 16.28K  /  1 Page

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    PTF181301 PTF181301A

INFINEON[Infineon Technologies AG]
Part No. PTF181301 PTF181301A
Description LDMOS RF power Field effect transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦,1805年至1880年兆
LDMOS RF power Field effect transistor 130 W/ 1805-1880 MHz

File Size 63.03K  /  4 Page

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    MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MRF9210 MRF9210R3
Description MRF9210 880 MHz, 200 W, 26 V Lateral N-Channel RF power MOSFET
RF power Field effect transistor

File Size 477.80K  /  8 Page

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    MRF9002R2

Motorola, Inc
Part No. MRF9002R2
Description MRF9002R2 1.0 GHz, 2 W, 26 V Lateral N-Channel Broadband RF power MOSFET
RF power Field effect transistor Array

File Size 576.52K  /  12 Page

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    Motorola Mobility Holdings, Inc.
Part No. MTW10N40E
Description TMOS E-FET power FIELD effect transistor 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, power, MOSFET, TO-247

File Size 71.13K  /  2 Page

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    New Jersey Semi-Conductor P...
Part No. MTP2N80
Description power Field effect transistor

File Size 94.17K  /  2 Page

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