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ETC Motorola, Inc ON Semiconductor
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| Part No. |
MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E
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| OCR Text |
...tics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching... |
| Description |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
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| File Size |
275.97K /
10 Page |
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