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Rohm CO.,LTD.
ROHM[Rohm]
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| Part No. |
RLD-78MA
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| OCR Text |
... manufactured by molecular beam epitaxy. The signalto-noise ratio is stable in comparison to conventional manufacturing techniques. This device is ideal for use in compact disc players. FApplications Compact disc players FFeatures 1) Signal... |
| Description |
AlGaAs laser diodes
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| File Size |
63.51K /
3 Page |
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ROHM[Rohm]
Rohm CO.,LTD.
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| Part No. |
RLD-78MC
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| OCR Text |
... manufactured by molecular beam epitaxy. The characteristics of this laser diode are suitable for use in sensors and bar code readers. FExternal dimensions (Units: mm)
M t y p e
FApplications Sensors Bar code readers Measuring instrumen... |
| Description |
Laser Diodes > For Laser Printers, Sensoers > For Sensors and General Purpose Measuring Equipment
AlGaAs Laser Diodes(铝砷化镓激光二极管)
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| File Size |
52.40K /
2 Page |
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Rohm CO.,LTD.
ROHM[Rohm]
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| Part No. |
RLD-78NP10-B
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| OCR Text |
... manufactured by molecular beam epitaxy. The characteristics of this laser diode are suitable for highspeed laser beam printers. FApplications Laser beam printers High-speed laser beam printers FFeatures 1) One-third dispersion compared wit... |
| Description |
AlGaAs Laser Diodes(铝砷化镓激光二极管)
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| File Size |
63.07K /
3 Page |
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Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
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| Part No. |
RLD-78PP-B RLD-78NP-D
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| OCR Text |
... manufactured by molecular beam epitaxy. The characteristics of these laser diodes are suitable for laser beam printers. FApplications Laser beam printers FFeatures 1) One-third dispersion compared with conventional laser diodes. 2) High-pr... |
| Description |
AlGaAs Laser Diodes(铝砷化镓激光二极管) AlGaAs的激光二极管（铝砷化镓激光二极管
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| File Size |
58.34K /
3 Page |
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Rohm CO.,LTD.
ROHM[Rohm]
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| Part No. |
RLD-78PP-G1 RLD-78NP-G1
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| OCR Text |
...technology using Molecular Beam epitaxy. In addition, they have the appropriate characteristics for sensor application as well.
!Applications Laser beam printers Sensors
!External dimensions (Units : mm)
902 0.40.1
1.0Min.
P T y ... |
| Description |
Title AlGaAs,Double-heterojunction,Visible Laser Diodes(铝砷化镓激光二极管)
Title AlGaAs, double-heterojunction, visible laser diodes
Title AlGaAs/ double-heterojunction/ visible laser diodes
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| File Size |
82.34K /
3 Page |
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Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
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| Part No. |
SFH405 Q62702-P835
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| OCR Text |
...e, fabricated in a liquid phase epitaxy process q High reliability q High radiant intensity q High pulse handling capability q Available in groups q Same package as SFH 305 Applications
q q q q
Wechsellichtbetrieb q Lochstreifenleser q ... |
| Description |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
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| File Size |
32.50K /
4 Page |
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Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
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| Part No. |
SFH409-2 Q62702-P1001 Q62702-P1002 Q62702-P860 SFH409 SFH409-1
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| OCR Text |
...e, fabricated in a liquid phase epitaxy process q High reliability q High pulse handling capability q Available in groups q Same package as SFH 309, SFH 487 Applications
q Photointerrupters q IR remote control of various equipment
Wechs... |
| Description |
From old datasheet system
GaAs Infrared Emitter
Mica Film Capacitor; Capacitance:47pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
CAP MICA 43PF 300V SMD 砷化镓红外发射器
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| File Size |
33.60K /
4 Page |
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SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
SFH487P Q62703-Q517
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| OCR Text |
...e, fabricated in a liquid phase epitaxy process q High reliability q Small tolerance: Chip surface to case surface q High pulse handling capability q Good spectral match to silicon photodetectors q Plane surface q Same package as SFH 309 Ap... |
| Description |
GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm
From old datasheet system
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| File Size |
37.63K /
5 Page |
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RFMD[RF Micro Devices]
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| Part No. |
TA0012
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| OCR Text |
...owth, using MBE (Molecular Beam epitaxy). This is a very accurate and repeatable growth process. Since each layer is placed over the entire wafer at once, no photo-
Copyright 1997-2000 RF Micro Devices, Inc.
TA0012
Vcc1 1 16 BiasR
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| Description |
New High Power, High Efficiency HBT GSM Power Amplifier
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| File Size |
73.22K /
4 Page |
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TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TQHBT3
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| OCR Text |
... Etch Stop for Uniformity MOCVD epitaxy High Density Interconnects; * 2 Global, 1 Local * Over 6 m Total Thickness * Dielectric Encapsulated Metals Thick Metal Interconnects: * Enhanced Thermal Management * Minimum Die Size Effective Base B... |
| Description |
InGaP HBT Foundry Service
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| File Size |
116.93K /
6 Page |
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it Online |
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Price and Availability
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