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http://
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| Part No. |
FMH20N60S1
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| OCR Text |
... note*1 pulsed drain current i dp 60 a gate-source voltage v gs 30 v repetitive and non-repetitive maximum avalanche current i ar 6.6 a not...10a v gs =10v - 0.161 0.19 gate resistance r g f=1mhz, open drain - 3.7 - forward transconductance... |
| Description |
N-Channel enhancement mode power MOSFET
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| File Size |
309.41K /
7 Page |
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http://
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| Part No. |
FMV20N60S1
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| OCR Text |
... note*1 pulsed drain current i dp 60 a gate-source voltage v gs 30 v repetitive and non-repetitive maximum avalanche current i ar 6.6 a not...10a v gs =10v - 0.161 0.19 gate resistance r g f=1mhz, open drain - 3.7 - forward transconductance... |
| Description |
rN-Channel enhancement mode power MOSFET
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| File Size |
339.66K /
7 Page |
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it Online |
Download Datasheet |
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TY Semiconductor Co., Ltd
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| Part No. |
2SK3294
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| OCR Text |
...e voltage v gss 30 v i d 20 a i dp * 60 a power dissipation t c =25 100 t a =25 1.5 channel temperature t ch 150 storage temperature t stg -...10a 6.0 s drain to source on-state resistance r ds(on) v gs =10v,i d =10a 120 160 m input capacitanc... |
| Description |
Gate voltage rating -30 V Low on-state resistance RDS(on) = 160 m MAX. (VGS = 10 V, ID = 10 A)
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| File Size |
76.05K /
1 Page |
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it Online |
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TY Semiconductor Co., Ltd
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| Part No. |
2SK3377
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| OCR Text |
...e voltage v gss 20 v i d 20 a i dp * 50 a power dissipation t c =25 30 t a =25 1.0 channel temperature t ch 150 storage temperature t stg -5...10a 5 10 s r ds(on)1 v gs =10v,i d =10a 35 44 m r ds(on)2 v gs =4.0v,i d =10a 54 78 m input capacita... |
| Description |
Low on-resistance RDS(on)1 = 44 m MAX. (VGS = 10 V, ID = 10 A)
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| File Size |
148.69K /
1 Page |
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it Online |
Download Datasheet |
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