| |
|
 |
Dynex Semiconductor, Ltd.
|
| Part No. |
DIM200PKM33-F000
|
| OCR Text |
...N) = 7.5 IF = 200A, VR = 1800V, dlf/dt = 1600A/s Diode arm Min. Typ. 1950 170 220 1180 225 5 290 80 144 75 Max. Units ns ns mJ ns ns C mJ C A mJ
Tcase = 125 unless stated otherwise. C
Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Pa... |
| Description |
IGBT Chopper Module 200 A, 3300 V, N-CHANNEL IGBT
|
| File Size |
231.79K /
10 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
Hi-Sincerity Mocroelectronics Corp. HSMC[Hi-Sincerity Mocroelectronics]
|
| Part No. |
H01N60S H01N60SJ H01N60SI
|
| OCR Text |
...Recovery Time (VGS=0V, IS=1.1A, dlf/dt=100A/us)
*3 *3
-
190 0.53
1 4 1.4 -
A A V ns nC
Reverse Recovery Charge (VGS=0V, IS=1.1A, dlf/dt=100A/us)
*3: Pulse Test: Pulse Width 300us, Duty Cycle2%
H01N60SI, H01N60SJ
HSM... |
| Description |
N-Channel Power Field Effect Transistor
|
| File Size |
58.77K /
5 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|