di-760 pdf Datasheet P4 Full Text Search --- IC-ON-LINE


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di-760 Datasheet PDF File

For di-760 Found Datasheets File :: 664 Search Time::1.407ms
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				IRF[International Rectifier]
Part No.	IRFP450A
OCR Text	...J = 25C, IF = 14A --- 3.9 5.8 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFP450A 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 10 I D , Drain-to-S...
Description	Power MOSFET(Vdss=500V, Rds(on)max=0.40ohm, Id=14A)
File Size	97.76K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFP450LC
OCR Text	..., V GS = 0V TJ = 25C, I F = 14A di/dt = 100A/s S+LD) Intrinsic turn-on time is negligible (turn-on is dominated by L Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 14A, di/dt 130A/s,...
Description	Power MOSFET(Vdss=500V, Rds(on)=0.40ohm, Id=14A)
File Size	289.37K / 8 Page	View it Online	Download Datasheet

				IRF International Rectifier
Part No.	IRGPC50FD2
OCR Text	...s LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (t...760 520 14 13 3000 340 40 50 105 4.5 8.0 112 420 250 160 Max. Units Conditions 170 IC = 39A 30 nC VC...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V,Ic=39A)
File Size	395.73K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFR5410 IRFU5410 IRFRU5410 IRFR5410TRL IRFR5410TRR
OCR Text	...J = 25C, IF = -8.4A 650 970 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 6.4mH R...
Description	-100V Single P-Channel HEXFET Power MOSFET in a I-Pak package -100V Single P-Channel HEXFET Power MOSFET in a D-Pak package Power MOSFET(Vdss=-100V, Rds(on)=0.205ohm, Id=-13A) HEXFET? Power MOSFET
File Size	212.33K / 10 Page	View it Online	Download Datasheet

				ON Semiconductor MOTOROLA[Motorola, Inc] Motorola, Inc.
Part No.	MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D
OCR Text	....5 7.5 -- -- -- nH (IS = 4.0 A, di/dt = 100 A/s) VSD ton trr -- -- -- -- ** -- 1.4 -- 760 Vdc ns (VDS = 400 V, ID = 4.0 A, VGS = 10 V) (VDD = 250 V, ID 4.0 A, RG = 12 , RL = 62 , VGS(on) = 10 V) td(on) tr td(off) tf Qg Qgs Qgd -- -- -- -- ...
Description	TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
File Size	254.33K / 8 Page	View it Online	Download Datasheet

				意法半导 STMicroelectronics
Part No.	STN3NE06 4877
OCR Text	... -65 to 150 150 (1) ISD 12 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX Unit V V V A A A W W/ o C V/ns o o C C (*) Pulse width li...760 100 30 1000 140 45 Max. Un it S pF pF pF 2/9 STN3NE06 ELECTRICAL CHARACTERISTICS (continu...
Description	N-Channel 60V-0.08Ω-3A - SOT-223 STripFETTM Power MOSFET(Ｎ沟道功率ＭＯＳＦＥ N - CHANNEL 60V - 0.08ohm- 3A - SOT-223 STripFET POWER MOSFET N - CHANNEL 60V - 0.08W - 3A - SOT-223 STripFET] POWER MOSFET From old datasheet system
File Size	93.42K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF820AL IRF820AS IRF820ASTRL IRF820ASTRR
OCR Text	...25C, I F = 2.5A --- 760 1140 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF820AS/L 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 I D , Drain-to-Source ...
Description	500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 500V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A) Power MOSFET(Vdss=500V/ Rds(on)max=3.0ohm/ Id=2.5A)
File Size	131.42K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF820A IRF820APBF
OCR Text	...25C, I F = 2.5A --- 760 1140 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF820A 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 I D , Drain-to-Source Cur...
Description	500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A) Power MOSFET(Vdss=500V/ Rds(on)max=3.0ohm/ Id=2.5A)
File Size	98.33K / 8 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	MCC310 MCC310-08IO1 MCC310-12IO1 MCC310-14IO1 MCC310-16IO1 MCC310-18IO1 MCD310-08IO1 MCD310-12IO1 MCD310-16IO1 MCD310-18IO1 MCD310-14IO1
OCR Text	...5C VR = 0 TVJ = TVJM VR = 0 (di/dt)cr TVJ = TVJM repetitive, IT = 960 A f =50 Hz, tP =200 ms VD = 2/3 VDRM IG = 1 A non repetitive, IT...760 275 0.112 0.056 0.152 0.076 12.7 9.6 50 mA mA V V mW V V mA mA V mA mA mA ms ms mC A K/W K/W K/W...
Description	Thyristor Modules Thyristor/Diode Modules Thyristor and Rectifiers Modules
File Size	165.69K / 4 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	MCC312 MCC312-12IO1 MCC312-14IO1 MCC312-16IO1 MCC312-18IO1 MCD312-12IO1 MCD312-14IO1 MCD312-16IO1 MCD312-18IO1
OCR Text	...5C VR = 0 TVJ = TVJM VR = 0 (di/dt)cr TVJ = TVJM repetitive, IT = 960 A f =50 Hz, tP =200 ms VD = 2/3 VDRM IG = 1 A, non repetitive, I...760 275 0.12 0.06 0.16 0.08 mA V V mW V V mA mA V mA mA IGD, TVJ = 140C 4: PGM = 20 W 5: PGM = 60 W...
Description	Thyristor Modules Thyristor/Diode Modules Thyristor and Rectifiers Modules
File Size	91.85K / 4 Page	View it Online	Download Datasheet

For di-760 Found Datasheets File :: 664 Search Time::1.407ms
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