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  cres Datasheet PDF File

For cres Found Datasheets File :: 4510    Search Time::0.953ms    
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    FMG1G75US60L

FAIRCHILD[Fairchild Semiconductor]
Part No. FMG1G75US60L
OCR Text ...amic Characteristics Cies Coes cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---7056 672 180 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(of...
Description IGBT
Molding Type Module

File Size 653.33K  /  9 Page

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    GA600HD25S

IRF[International Rectifier]
Part No. GA600HD25S
OCR Text ... Eon Eoff (1) Ets (1) Cies Coes cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switchin...
Description 250V DC-1 kHz (Standard) Single IGBT in a Dual INT-A-Pak package
Standard Speed IGBT

File Size 625.24K  /  10 Page

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    CM100DY-28H

POWEREX[Powerex Power Semiconductors]
Part No. CM100DY-28H
OCR Text ...Time Fall Time Symbol Cies Coes cres td(on) tr td(off) tf trr VEC Qrr IE = 100A, diE/dt = -300A/s IE = 100A, VGE = 0V IE = 100A, diE/dt = -300A/s VCC = 800V, IC = 100A, VGE1 = VGE2 = 15V, RG = 3.1 VGE = 0V, VCE = 10V Test Conditions Min. - ...
Description Dual IGBTMOD 100 Amperes/1400 Volts

File Size 67.61K  /  4 Page

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    CM150DY-28H

Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Part No. CM150DY-28H
OCR Text ...Time Fall Time Symbol Cies Coes cres td(on) tr td(off) tf trr VEC Qrr IE = 150A, diE/dt = -300A/s IE = 150A, VGE = 0V IE = 150A, diE/dt = -300A/s VCC = 800V, IC = 150A, VGE1 = VGE2 = 15V, RG = 2.1 VGE = 0V, VCE = 10V Test Conditions Min. - ...
Description Dual IGBTMOD 150 Amperes/1400 Volts

File Size 69.57K  /  4 Page

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    CM200DY-28H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM200DY-28H
OCR Text ...Time Fall Time Symbol Cies Coes cres td(on) tr td(off) tf trr Qrr IE = 200A, diE/dt = -400A/s IE = 200A, diE/dt = -400A/s VCC = 800V, IC = 200A, VGE1 = VGE2 = 15V, RG = 1.6 VGE = 0V, VCE = 10V Test Conditions Min. - - - - - - - - - Typ. - -...
Description IGBT Modules:1400V
HIGH POWER SWITCHING USE INSULATED TYPE

File Size 49.59K  /  4 Page

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    CM300DY-28H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM300DY-28H
OCR Text ...Time Fall Time Symbol Cies Coes cres td(on) tr td(off) tf trr Qrr IE = 300A, diE/dt = -600A/s IE = 300A, diE/dt = -600A/s VCC = 800V, IC = 300A, VGE1 = VGE2 = 15V, RG = 1.0 VGE = 0V, VCE = 10V Test Conditions Min. - - - - - - - - - Typ. - -...
Description IGBT Modules:1400V
HIGH POWER SWITCHING USE INSULATED TYPE

File Size 49.35K  /  4 Page

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    CM50DY-28H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM50DY-28H
OCR Text ...Time Fall Time Symbol Cies Coes cres td(on) tr td(off) tf trr Qrr IE = 50A, diE/dt = -100A/s IE = 50A, diE/dt = -100A/s VCC = 800V, IC = 50A, VGE1 = VGE2 = 15V, RG = 6.3 VGE = 0V, VCE = 10V Test Conditions Min. - - - - - - - - - Typ. - - - ...
Description IGBT Modules:1400V
MEDIUM POWER SWITCHING USE INSULATED TYPE

File Size 48.00K  /  4 Page

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    CM75DY-28H

Mitsubishi Electric Sem...
Powerex Power Semiconductors
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Part No. CM75DY-28H
OCR Text ...Time Fall Time Symbol Cies Coes cres td(on) tr td(off) tf trr Qrr IE = 75A, diE/dt = -150A/s IE = 75A, diE/dt = -150A/s VCC = 800V, IC = 75A, VGE1 = VGE2 = 15V, RG = 4.2 VGE = 0V, VCE = 10V Test Conditions Min. - - - - - - - - - Typ. - - - ...
Description HIGH POWER SWITCHING USE INSULATED TYPE
IGBT Modules:1400V

File Size 47.54K  /  4 Page

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    IXST35N120B IXSH35N120B

IXYS[IXYS Corporation]
Part No. IXST35N120B IXSH35N120B
OCR Text ...Outline (IXSH) gfs Cies Coes cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Note 2 9 mJ ns ns mJ ns ns mJ 0.42 K/W TO-268 Outline (IXST) (TO-247) 0.25 K/W ...
Description IGBT

File Size 81.21K  /  2 Page

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    MSAGX75F60A

MICROSEMI[Microsemi Corporation]
Part No. MSAGX75F60A
OCR Text ...GES ICES VCE(sat) gfs Cies Coes cres td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Qg Qge Qgc CONDITIONS VGS = 0 V, I C = 250 A VCE = VGE, IC = 250 A VGE = 20V DC, VCE = 0 VCE =0.8*BVCES VGE = 0 V VGE= 15V, I C= 50A I C= ...
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

File Size 45.08K  /  2 Page

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