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SB330 2N4003 08500 DL400 E0160 MBR20SA SC667EVB D1859
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    SGS Thomson Microelectronics
Part No. AN1068
OCR Text ...rance of 10,000 write/erase cy- cles.to reduce chip size and cost smaller st7 devices use a process that guarantees 100- cycle endurance for flash memory. data retention tests are performed at high temperature to guarantee 20 data retention...
Description MCUS - SELECTING BETWEEN ROM, FASTROM AND FLASH FOR A MICROCONTROLLER

File Size 85.41K  /  8 Page

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    意法半导
Part No. M29F105B
OCR Text ...e up of commands written in cy- cles, can be given to the program/erasecontroller through a command interface (c.i.). for added data protection, program or erase execution starts after 4 or 6 cycles. the first, second, fourth and fifth cycl...
Description 1Mbit (64Kb x16, Block Erase) Single Supply Flash Memory(1Mb闪速存储器)

File Size 204.73K  /  28 Page

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    意法半导
STMicroelectronics N.V.
Part No. M58LW064 M58LW064BT M58LW064A150T6T M58LW064AZA M58LW064A150T1T M58LW064B150ZA6T
OCR Text ...e up of commands written in cy- cles, can be given to the program/erase controller (p/e.c.) by writing to the command interface (c.i.). at power-up or on exit from power down or if v dd is lower than v lko , the command interface is reset t...
Description 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories 64兆位x16和x16/x32,块擦除低压闪存

File Size 326.61K  /  53 Page

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    AS7C251MNTF32A

Alliance Semiconductor Corporation
Part No. AS7C251MNTF32A
OCR Text ...rt r/w low to perform write cy cles. byte write enable controls write access to specific bytes, or can be tied low for full 36 bit writes. write enable signals, along with the write address, are regist ered on a rising edge of th e clock...
Description (AS7C251MNTF32A / AS7C251MNTF36A) 2.5V 1M x 32/36 Flowthrough SRAM

File Size 444.02K  /  18 Page

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    AS7C33128NTF32B

Alliance Semiconductor Corporation
Part No. AS7C33128NTF32B
OCR Text ...rt r/w low to perform write cy cles. byte write enable controls write access to specific bytes, or can be tied low for full 36 bit writes. write enable signals, along with the write address, are regist ered on a rising edge of th e clock...
Description (AS7C33128NTF32B / AS7C33128NTF36B) 3.3V 128K x 32/36 Flowthrough Synchronous SRAM

File Size 446.71K  /  18 Page

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    Electronic Theatre Controls, Inc.
Part No. TU800 TU802 TU804 TU801
OCR Text ...ic curves number of c y cles at 60hz fig.2-max pe ak for w a rd surge cur r e n t i fsm, peak fw d surge curr ent (a) case temperature c fig.1- for w a rd curre nt derating curv e ...
Description 8 AMP Single-Phase Bridge Rectifier

File Size 98.01K  /  4 Page

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    LG
Part No. ICR18650-A3
OCR Text ...cycled per 6.1 and 6.2 for 3 cy cles to obtain recovered capacity. criteria : no leakage, capacity recovery rate 80 % charge temp. discharge temperature -10 o c 0 o c 23 o c 60 o c 23o c 70 % 90 % 100 % 95 % ...
Description Lithium-Ion-Battery

File Size 147.89K  /  8 Page

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    TFS915B

Vectron International, Inc
Part No. TFS915B
OCR Text ...ly , 1 oct a ve per min, 10 c y cles pe r plan, 3 plans; din iec 68 t2 - 6 3. change o f temperatu r e: -55 c t o 125 c / 30 min. each / 1 0 c y cles din iec 68 p a rt 2 ? 14 test n 4. resistance to solde...
Description VI TELEFILTER

File Size 174.07K  /  5 Page

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    SGS Thomson Microelectronics
Part No. AN1087
OCR Text ...t, that is to say, 22 clock cy- cles. however, in most cases this phase is only 16 clock cycles long. on the other hand, the shortest non-interruptable sequence is the last clock cycle of an in- struction (1 clock cycle long). 2.3 exception...
Description ST9 INTERRUPT RESPONSE TIME

File Size 38.57K  /  8 Page

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    HY5Y6B6DLFP-PF HY5Y6B6DLFP-HF

Hynix Semiconductor
Part No. HY5Y6B6DLFP-PF HY5Y6B6DLFP-HF
OCR Text ...ded. after the auto refresh cy cles are completed, a mode register set(mrs) command will be issued to program the specific mode of operation (cas latency, burst length, etc.) and a extended mode register set command will be issued to pr...
Description Mobile SDR - 64Mb

File Size 316.26K  /  27 Page

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