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For cdss Found Datasheets File :: 50    Search Time::2.079ms    
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    INFINEON[Infineon Technologies AG]
Part No. BG5130R
OCR Text ...8 G p 45 1 1.3 F 35 dB 24 Gp dB cdss 1.6 Cg1ss 2.7 pF g fs 41 mS typ. max. Unit 3 2006-04-13 BG5130R Total power dissipation Ptot = (TS) Drain current ID = (IG1) VG2S = 3V 300 30 mW mA P tot 200 20 150 ID ...
Description DUAL - N-Channel MOSFET Tetrode

File Size 199.48K  /  10 Page

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    BG3123 BG3123R

INFINEON[Infineon Technologies AG]
Part No. BG3123 BG3123R
OCR Text ...8 1.8 1.4 1.6 Gp 25 24 32 30 dB cdss 1.3 1.1 dB Cg1ss 1.9 1.5 gfs 30 25 pF Values typ. max. mS Unit AC Characteristics V DS = 5V, V G2S = 4V, (ID = 14 mA) (verified by random sampling) 3 Feb-27-2004 BG3123... Total power dissip...
Description RF-MOSFET - Package: SOT363
DUAL N-Channel MOSFET Tetrode

File Size 181.16K  /  8 Page

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    Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BF2040 Q62702-F1775
OCR Text ... = 1 MHz Output capacitance cdss - 2.3 - VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 1 MHz Noise figure F - 2 - dB VDS = 5 V, ID = 15 mA, f = 800 MHz Semiconductor Group Semiconductor Group 22 Jun-05-1998 ...
Description Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)

File Size 15.27K  /  2 Page

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    BF2030 Q62702-F1773

Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BF2030 Q62702-F1773
OCR Text ... = 1 MHz Output capacitance cdss - 2.1 - VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 1 MHz Noise figure F - 2 - dB VDS = 5 V, ID = 10 mA, f = 800 MHz Semiconductor Group Semiconductor Group 22 Mar-16-1998 ...
Description Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)

File Size 15.31K  /  2 Page

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    BF2030W Q62702-F1774

Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BF2030W Q62702-F1774
OCR Text ... = 1 MHz Output capacitance cdss - 1.1 - VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 1 MHz Noise figure F - 2 - dB VDS = 5 V, ID = 10 mA, f = 800 MHz Semiconductor Group Semiconductor Group 22 Jun-05-1998 ...
Description Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)

File Size 15.29K  /  2 Page

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    BG3130 BG3130R

INFINEON[Infineon Technologies AG]
Part No. BG3130 BG3130R
OCR Text ... Gp F 45 1.3 1.7 Gp 24 31 dB dB cdss 1.1 gfs Cg1ss Values typ. 33 1.9 max. mS pF Unit AC Characteristics V DS = 5V, V G2S = 4V, (ID = 14 mA) (verified by random sampling) 3 Feb-27-2004 BG3130... Total power dissipation Ptot = (...
Description RF-MOSFET - Package:SOT363
RF-MOSFET - Package: SOT363
DUAL N-Channel MOSFET Tetrode

File Size 166.03K  /  6 Page

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    BL8531H

Samsung semiconductor
Part No. BL8531H
OCR Text ...the on-chip clamp. The internal cdss take two samples of the incoming pixel data; the first samples are taken during the reset time while the second samples are taken during data portion of the input pixels. When STRTLN is low, the internal...
Description AFE FOR CCD/CIS SIGNAL PROCESSOR

File Size 148.04K  /  30 Page

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    3SK222

NEC
Part No. 3SK222
OCR Text ...fs| 15 19.5 nA nA mS Ciss cdss Crss 3.6 1.0 4.3 1.5 0.02 5.0 2.0 0.03 pF pF pF GPS NF1 NF2 21.0 23.0 1.2 1.0 2.0 2.0 dB dB dB VDS = 6 V, VG2S = 4 V, ID = 10 mA f = 200 MHz VDS = 6 V, VG2S = 4 V, ID = 10 mA f...
Description    RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD

File Size 56.80K  /  6 Page

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    Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. Q62702-F1771 BF2000
OCR Text ... Unit gfs Cg1ss Cg2ss Cdg1 cdss G ps G ps F F G ps 28 40 mS pF VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 1 kHz Gate 1 input capacitance VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 1 MHz Gate 2 input capacitance VDS = 5 V, I...
Description From old datasheet system
Silicon N Channel MOSFET Tetrode

File Size 18.16K  /  3 Page

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    SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. Q62702-F1772 BF2000W
OCR Text ... Unit gfs Cg1ss Cg2ss Cdg1 cdss G ps G ps F F G ps 28 40 mS pF VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 1 kHz Gate 1 input capacitance VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 1 MHz Gate 2 input capacitance VDS = 5 V, I...
Description From old datasheet system
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz)
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET

File Size 18.44K  /  3 Page

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