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  CAB600-BD8 Datasheet PDF File

For CAB600-BD8 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    BD896 BD898

POWER INNOVATIONS LTD
Part No. BD896 BD898
Description POWER TRANSISTOR, TO-220

File Size 207.79K  /  6 Page

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HUA FENG CIRCUIT





    Motorola
Part No. BD805 BD809
Description (BD8xx) Power Transistors

File Size 76.02K  /  1 Page

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    BD825 BD829

Philips Semiconductors
Part No. BD825 BD829
Description NPN power transistors

File Size 60.09K  /  8 Page

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    LBD801-29-XX

LIGITEK electronics co., ltd.
Part No. LBD801-29-XX
Description LIGHT BAR LED DISPLAY

File Size 140.55K  /  8 Page

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    SavantIC
Part No. BD897A
Description (BD895A - BD899A) SILICON POWER TRANSISTOR

File Size 127.96K  /  3 Page

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    Pan Jit International
Part No. BD860S
Description (BD840S - BD8200S) DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

File Size 132.68K  /  3 Page

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    Teridian Semiconductor, Corp.
Part No. BD814 BD844
Description SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):8A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA 晶体管|晶体管|进步党| 80V的五(巴西)总裁| 1.5AI(丙)|02AA

File Size 40.36K  /  1 Page

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    BD839 BD841

Philips Semiconductors
Part No. BD839 BD841
Description (BD839 - BD843) Silicon Planar Epitaxial Power Transistors

File Size 261.23K  /  8 Page

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    BD809 BD810 BD809-D

Motorola, Inc
ON Semiconductor
Part No. BD809 BD810 BD809-D
Description    POWER TRANSISTORS PNP SILICON
Plastic High Power Silicon Transistor
Plastic High Power Silicon PNP Transistor

File Size 49.62K  /  8 Page

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    Analog Devices, Inc.
HIROSE ELECTRIC Co., Ltd.
Part No. BD825-16 BD827-10 BD827-6 BD829-6
Description SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):12A; Peak Non Repetitive Surge Current, Itsm:120A; Gate Trigger Current Max, Igt:20mA
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1.5A I(C) | TO-202 晶体管|晶体管|叩| 45V的五(巴西)总裁| 1.5AI(丙)|02
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-202 晶体管|晶体管|叩| 60V的五(巴西)总裁|甲一(c)|202

File Size 205.03K  /  5 Page

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For CAB600-BD8 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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