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avalanche-rugged Datasheet PDF File

For avalanche-rugged Found Datasheets File :: 4083 Search Time::6.344ms
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				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BYX134G
OCR Text	...xcellent stability * Guaranteed avalanche energy absorption capability. APPLICATIONS * Car ignition systems * Automotive applications with e...Rugged glass package, using a high temperature alloyed construction. The SOD61AC2 is hermetically se...
Description	High-voltage car ignition diode
File Size	41.25K / 8 Page	View it Online	Download Datasheet

				http:// PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
Part No.	BYX135GL
OCR Text	...xcellent stability * Guaranteed avalanche energy absorption capability. APPLICATIONS * Car ignition systems * Automotive applications with e...Rugged glass package, using a high temperature alloyed construction. The SOD119AD is hermetically se...
Description	High-voltage car ignition diode(高压汽车点火二极
File Size	36.85K / 4 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BYX135G
OCR Text	...xcellent stability * Guaranteed avalanche energy absorption capability. APPLICATIONS * Car ignition systems * Automotive applications with e...Rugged glass package, using a high temperature alloyed construction. The SOD61AD2 is hermetically se...
Description	Hook-Up Wire; Conductor Size AWG:18; No. Strands x Strand Size:16 x 30; Jacket Color:Dark Blue; Approval Bodies:UL, CSA; Approval Categories:UL AWM Style 3173; CSA Type CL1251; Conductor Material:Copper RoHS Compliant: Yes High-voltage car ignition diode
File Size	41.24K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRLW1520A IRLW_I520A IRLW/I520A
OCR Text	Avalanche Rugged Technology s Rugged Gate Oxide Technology s Lower Input Capacitance s Improved Gate Charge s Extended Safe Operating Area s 175 Operating Temperature s Lower Leakage Current : 10 A (Max.) @ VDS = 100V s Lower RDS(ON) : 0.17...
Description	Advanced Power MOSFET
File Size	231.40K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier] FAIRCHILD[Fairchild Semiconductor]
Part No.	IRLW630A IRLI630A IRLI630
OCR Text	Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 150C Operating Temperature Lower Leakage Current: 10A (Max.) @ VDS = 200V Lower RDS(ON): 0.335 (Typ.) ...
Description	N-CHANNEL MOSFET From old datasheet system ADVANCED POWER MOSFET
File Size	223.49K / 7 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXTA1N100 IXTP1N100
OCR Text	Avalanche Energy Rated IXTA 1N100 IXTP 1N100 VDSS ID25 RDS(on) = 1000 V = 1.5 A = 11 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EA...Rugged polysilicon gate cell structure Fast switching times Symbol Test Conditions Characteristic ...
Description	Discrete MOSFETs: Standard N-channel Types High Voltage MOSFET
File Size	45.67K / 2 Page	View it Online	Download Datasheet

				MICROSEMI[Microsemi Corporation]
Part No.	MX043G MX043J MX043
OCR Text	...dth limited by TJmax Repetitive Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode) Pulse Source Current (...
Description	Radiation Hardended MOSFET RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	182.90K / 4 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
Part No.	SFW9510 SFI9510 SFW SFW9510TM
OCR Text	Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175 C Operating Temperature n Lower Leakage Current : 10 A (Max.) @ VDS = -100V n Low RDS(ON) : 0.9...
Description	100V P-Channel A-FET Advanced Power MOSFET
File Size	226.67K / 7 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRLW530A IRLWI530A IRLI530A IRLW530ATM
OCR Text	Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175C Operating Temperature Lower Leakage Current: 10A (Max.) @ VDS = 100V Lower RDS(ON): 0. 101 (Typ.)...
Description	100V N-Channel Logic Level A-FET ADVANCED POWER MOSFET
File Size	271.41K / 9 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
Part No.	SFW12955 SFW2955
OCR Text	Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = -60V Low RDS(ON) : 0.22 (Typ.) 1 ...
Description	Advenced Power MOSFET 9.4 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB Advanced Power MOSFET
File Size	247.15K / 7 Page	View it Online	Download Datasheet

For avalanche-rugged Found Datasheets File :: 4083 Search Time::6.344ms
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