| |
|
 |
New Jersey Semi-Conductor P...
|
| Part No. |
C180 C180D
|
| OCR Text |
...05 fax: (973) 376-8960 i c180 i amplifying gate c180 silicon controlled rectifier is designed for phase control applications. this is an all-diffused pic-pac device, employing the field-proven amplifying gate. features: ? high di/dt ratings... |
| Description |
High Power Silicon Controlled Rectifier
|
| File Size |
117.53K /
2 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
|
| Part No. |
TZ800N12KOC
|
| OCR Text |
...3 si-elemente mit druckkontakt, amplifying-gate si-pellets with pressure contact, amplifying-gate innere isolation aln internal insulation anzugsdrehmoment fr mechanische befestigung toleranz / tolerance 15% m1 6 nm mounting torque anzugsdr... |
| Description |
1500 A, 1200 V, SCR
|
| File Size |
35.17K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
|
| Part No. |
T1989N16TOF T1989N18TOC
|
| OCR Text |
...es si-element mit druckkontakt, amplifying- gate si-pellet with pressure contact, amplifying gate anpre?kraft clamping force f 30...65 kn gewicht weight g typ. 900 g kriechstrecke creepage distance 30 mm feuchteklasse humidity classifi... |
| Description |
4200 A, 1600 V, SCR
4200 A, 1800 V, SCR
|
| File Size |
209.92K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
STMicroelectronics N.V.
|
| Part No. |
TSM221IDT
|
| OCR Text |
...+00 fcn 5 4 vofn 5.000000e+00 * amplifying stage fip 5 19 vofp 2.750000e+02 fin 5 19 vofn 2.750000e+02 rg1 19 5 1.916825e+05 rg2 19 4 1.916825e+05 cc 19 29 2.200000e-08 hztp 30 29 vofp 1.3e+03 hztn 5 30 vofn 1.3e+03 dopm 19 22 mdth 400e-12 ... |
| Description |
Voltage-Feedback Operational Amplifier 电压反馈运算放大
|
| File Size |
79.47K /
11 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
