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				Anpec Electronics Corporation ETC[ETC] ANPEC[Anpec Electronics Coropration] http://
Part No.	APM4835 APM4835KC-TR APM4835KC-TU
OCR Text	... 6 2700 4 1800 2 900 Coss Crss 0 0 0 10 20 30 40 50 0 6 12 18 24 30 QG - Gate Ch...1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles Carrier Tape & Reel Dimension...
Description	P-Channel Enhancement Mode MOSFET
File Size	125.16K / 9 Page	View it Online	Download Datasheet

				ALPHA Semiconductor Alpha Industries Inc ETC[ETC] ALPHA[Alpha Industries] Alpha Industries, Inc.
Part No.	AS1117 AS1117M1 AS1117M1-X AS1117M3 AS1117M3-X AS1117R AS1117R-X AS1117S AS1117S-X AS1117T AS1117T-X AS1117U AS1117U-X AS1117R-5V AS1117R-2.85V AS1117R-1.5V AS1117R-3.3V AS1117S-3V AS1117M1-3V AS1117U-5V AS1117T-2.5V AS1117T-2.85V AS1117M1-2.85V AS1117M1-5V AS1117M1-2.5V AS1117M3-5V AS1117S-2.5V
OCR Text	...2.970 2.940 3.267 3.234 4.950 4.900 1.238 1.225 Max 1.515 1.530 2.525 2.550 2.879 2.907 3.030 3.060 3.333 3.366 5.050 5.100 1.262 1.270 ...1000 0.01 60 Load Regulation mV Dropout Voltage ( Note 2) Quiescent Current Current Limit T...
Description	800mA low dropout regulator 2,5V 800mA low dropout regulator 3V 800mA low dropout regulator 1,5V 800mA low dropout regulator 5V 800mA Low Dropout Regulator SCSI-II Active Terminator AB 2C 2#16 SKT RECP 800mA low dropout regulator 2,85V 800mA low dropout regulator 3,3V
File Size	75.37K / 11 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	BFG520W BFG520W_X BFG520W/X
OCR Text	...C IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C - IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C 16 s = opt; IC = 5 mA; VCE = 6 V; f =...1000 MHz 2000 MHz 2 1000 MHz 900 MHz 500 MHz 10 1 5 0 1 10 I C (mA) 10 2 0 1 10 I ...
Description	NPN 9GHz wideband transistor(NPN 9G赫兹宽带晶体 NPN 9 GHz wideband transistors
File Size	154.15K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG520/X
OCR Text	...25 C IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C IC = 20 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 C S212 F insertion power gain noise figure ...1000 MHz 20 Gass (dB) 15 handbook, halfpage 5 MRA683 Fmin (dB) 4 IC = 5 mA 20 m...
Description	NPN 9 GHz wideband transistor L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR NPN 9GHz wideband transistor(NPN 9G赫兹宽带晶体
File Size	146.07K / 13 Page	View it Online	Download Datasheet

				Dynex Semiconductor, Ltd. DYNEX[Dynex Semiconductor]
Part No.	DS1104SG27 DS1104SG30 DS1104SG DS1104SG26 DS1104SG28 DS1104SG29 DS1104SG25
OCR Text	...15 1000 0.01 10 I2t 900 Conduction 5 800 Effective thermal resistance Junction to case C/W Double side 0.032 0.034 0.044 0.057 Single side 0.064 0.066 0.076 0.089 0 1 ms 10 1 23 5 10 20 700 50...
Description	Rectifier Diode 1849 A, 2900 V, SILICON, RECTIFIER DIODE
File Size	94.85K / 7 Page	View it Online	Download Datasheet

				DYNEX[Dynex Semiconductor]
Part No.	DS1112SG57 DS1112SG DS1112SG55 DS1112SG56 DS1112SG58 DS1112SG59 DS1112SG60
OCR Text	...e = 100oC Tcase = 100oC 630 990 900 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward ...1000 1500 1000 500 500 0 0.5 1.5 2.5 Instantaneous forward voltage, VF - (V) 3....
Description	Rectifier Diode
File Size	94.33K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA100TS120U
OCR Text	... 4 0 1 10 100 0 0 300 600 900 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance...1000 RG1=15;RG2 = 0 G = Ohm VGE = 15V VCC = 720V 100 IC = 200 A IC = 100 A IC = 50 A 40...
Description	HALF-BRIDGE IGBT INT-A-PAK 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
File Size	268.82K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1405L IRF1405S
OCR Text	... 110 4.5 7.5 5480 1210 280 5210 900 1500 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 5.3 m VGS = 1...1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 I D , Drain-to-Source Current ...
Description	Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A? Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=131A) Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A) Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?) 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	153.38K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1405
OCR Text	... 110 4.5 7.5 5480 1210 280 5210 900 1500 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 5.3 m VGS = 1...1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 I D , Drain-to-Source Current ...
Description	Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A? Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?) Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A) Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=169A)
File Size	114.28K / 9 Page	View it Online	Download Datasheet

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