800v 0.5a pdf Datasheet P4 Full Text Search --- IC-ON-LINE


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800v 0.5a Datasheet PDF File

For 800v 0.5a Found Datasheets File :: 2009 Search Time::2.016ms
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				Infineon Technologies AG
Part No.	IDP09E120 IDP09E12009
OCR Text	...tics reverse recovery time v r =800v, i f =9a, d i f /d t =750a/s, t j =25c v r =800v, i f =9a, d i f /d t =750a/s, t j =125c v r =800...0 5 10 15 a 25 i f 1 power dissipation p tot = f ( t c ) parameter: t j 150 c 25 50 7...
Description	Fast Switching Diode
File Size	341.74K / 8 Page	View it Online	Download Datasheet

				Advanced Power Technolo... Advanced Power Technology
Part No.	APT25GN120SG APT25GN120BG APT25GN120B APT25GN120S
OCR Text	...Inductive Switching (25C) VCC = 800v VGE = 15V I C = 150A VGE = 15V MIN TYP MAX UNIT pF V nC 1800 105 85 9.5 155 10 85 75 22 17 280 135 T...0 7 TJ = +25C Turn-on Switching Energy (Diode) 6 mJ Inductive Switching (125C) VCC = 800v ...
Description	IGBT
File Size	192.95K / 6 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APTM120UM95F-ALN
OCR Text	...itching @ 125C VGS = 15V VBus = 800v ID = 103A R G =0.8 Inductive switching @ 25C VGS = 15V, VBus = 800v ID = 103A, R G = 0.8 Inductive switching @ 125C VGS = 15V, VBus = 800v ID = 103A, R G = 0.8 Min Typ 30.9 4.6 0.78 1122 144 720 20...
Description	Single Switch MOSFET Power Module
File Size	296.97K / 6 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT20GF120SRDQ1G APT20GF120BRDQ1 APT20GF120BRDQ1G APT20GF120SRDQ1
OCR Text	...Inductive Switching (25C) VCC = 800v VGE = 15V RG = 4.3 I C = 15A VGE = 15V MIN TYP MAX UNIT pF V nC 1090 125 65 10.5 100 12 65 64 10 9 1...0 V GE = 15V 80 70 IC, COLLECTOR CURRENT (A) 60 50 40 30 20 10 0 APT20GF120B_SRDQ1(G) 15...
Description	FAST IGBT & FRED
File Size	442.29K / 9 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT45GP120JDF2
OCR Text	...ction loss ? 50 khz operation @ 800v, 16a ? low gate charge ? 20 khz operation @ 800v, 30a ? ultrafast tail current shutoff ? rbsoa rated p...0 750 3000 100 characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i...
Description	MOSFET
File Size	206.50K / 9 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT45GP120B2DF2
OCR Text	...tion loss ? 100 khz operation @ 800v, 16a ? low gate charge ? 50 khz operation @ 800v, 28a ? ultrafast tail current shutoff ? rbsoa rated p...0 750 3000 100 characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i...
Description	MOSFET
File Size	197.15K / 9 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AOTF5N100
OCR Text	...al gate charge v gs =10v, v ds =800v, i d =5a dynamic parameters v ds =5v, i d =250 m a v ds =800v, t j =125c v ds =0v, v gs =30v v drain-...0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured wit...
Description	1000V,4A N-Channel MOSFET
File Size	336.02K / 6 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APT1201R4BFLLG
OCR Text	...tive switching @ 25c v dd = 800v, v gs = 15v i d = 9a, r g = 5 ? inductive switching @ 125c v dd = 800v, v gs = 15v i d ...0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junc...
Description	POWER MOS 7 FREDFET
File Size	247.31K / 5 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SGB07N120 SGB07N12007
OCR Text	...gy e ts t j =25 c, v cc =800v, i c =8a, v ge =15v/0v, r g =47 ? , l 1) =180nh, c 1) =40pf energy losses include ?tail? and diode reverse recovery. - 1.0 1.35 mj switching characteristic, inductive load, at t j =150 ...
Description	Fast IGBT in NPT-technology lower Eoff compared to previous generation
File Size	437.70K / 11 Page	View it Online	Download Datasheet

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