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advanced Micro devices, Inc. SPaNSION LLC adVaNCEd MICRO dEVICES INC
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| Part No. |
aM28F010a aM28F010a-120EC aM28F010a-120ECB aM28F010a-120EE aM28F010a-120EEB aM28F010a-120EIB aM28F010a-120FC aM28F010a-120FE aM28F010a-120FI aM28F010a-120FIB aM28F010a-120JC aM28F010a-120JCB aM28F010a-120JE aM28F010a-120JEB aM28F010a-70EE aM28F010a-70EC aM28F010a-90EC aM28F010a-90EE aM28F010a-70FC aM28F010a-90FC aM28F010a-90FCB aM28F010a-120FCB aM28F010a-150FC aM28F010a-150FCB aM28F010a-200FC aM28F010a-200FCB aM28F010a-70FCB aM28F010a-90ECB aM28F010a-200FEB aM28F010a-70FE aM28F010a-70FEB aM28F010a-90FEB aM28F010a-70ECB aM28F010a-200EC aM28F010a-90JEB aM28F010a-90JCB aM28F010a-90PCB aM28F010a-70JCB aM28F010a-200FIB aM28F010a-200JC aM28F010a-150JCB aM28F010a-150EIB aM28F010a-70JEB aM28F010a-70EIB aM28F010a-70JIB aM28F010a-90PIB aM28F010a-90JI aM28F010a-90JIB aM28F010a-150EE aM28F010a-150FI aM28F010a-200EEB
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| Description |
1 Megabit (128 K x 8-bit) cmos 12.0 Volt/ Bulk Erase flash Memory with Embedded algorithms 0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TaPE T&R RoHS Compliant: Yes CaP 100PF 1500V 20% NP0(C0G) SMd-1808 TR-13 PLaTEd-NI/SN 1 Megabit (128 K x 8-bit) cmos 12.0 Volt, Bulk Erase flash Memory with Embedded algorithms 1兆位128亩8位)的cmos 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-bit) cmos 12.0 Volt, Bulk Erase flash Memory with Embedded algorithms 1兆位128亩8位)cmos 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-bit) cmos 12.0 Volt, Bulk Erase flash Memory with Embedded algorithms 1兆位28亩8位)的cmos 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-bit) cmos 12.0 Volt, Bulk Erase flash Memory with Embedded algorithms 128K X 8 flash 12V PROM, 200 ns, PQCC32 1 Megabit (128 K x 8-bit) cmos 12.0 Volt, Bulk Erase flash Memory with Embedded algorithms 128K X 8 flash 12V PROM, 70 ns, PQCC32 1 Megabit (128 K x 8-bit) cmos 12.0 Volt, Bulk Erase flash Memory with Embedded algorithms 128K X 8 flash 12V PROM, 120 ns, PdSO32 1 Megabit (128 K x 8-bit) cmos 12.0 Volt, Bulk Erase flash Memory with Embedded algorithms 128K X 8 flash 12V PROM, 90 ns, PQCC32 1 Megabit (128 K x 8-bit) cmos 12.0 Volt, Bulk Erase flash Memory with Embedded algorithms 128K X 8 flash 12V PROM, 150 ns, PdSO32 1 Megabit (128 K x 8-bit) cmos 12.0 Volt, Bulk Erase flash Memory with Embedded algorithms 128K X 8 flash 12V PROM, 70 ns, PdSO32
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| File Size |
242.75K /
35 Page |
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it Online |
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advanced Micro devices, Inc. adVaNCEd MICRO dEVICES INC
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| Part No. |
aM29LV160dB-90WCC aM29LV160dB-70WCC aM29LV160dT-70WCC aM29LV160dB90EC aM29LV160dB-120SC aM29LV160dT-120WCC aM29LV160dB-120WCC aM29LV160dB120EC
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| Description |
16 Megabit (2 M x 8-bit/1 M x 16-Bit) cmos 3.0 Volt-only Boot Sector flash Memory 1M X 16 flash 3V PROM, 70 ns, PBGa48 29LV160BB 16MBIT flash 3V TSOP-48 1M X 16 flash 3V PROM, 90 ns, PdSO48 16 Megabit (2 M x 8-bit/1 M x 16-Bit) cmos 3.0 Volt-only Boot Sector flash Memory 1M X 16 flash 3V PROM, 120 ns, PdSO44 16 Megabit (2 M x 8-bit/1 M x 16-Bit) cmos 3.0 Volt-only Boot Sector flash Memory 1M X 16 flash 3V PROM, 120 ns, PBGa48 IC SM flash 1MX16 120NS 3.3V 1M X 16 flash 3V PROM, 120 ns, PdSO48
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| File Size |
782.85K /
49 Page |
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it Online |
Download Datasheet
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advanced Micro devices, Inc. SPaNSION LLC
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| Part No. |
aM29F016 aM29F016-90 aM29F016-75 aM29F016-75FIB aM29F016-75FCB aM29F016-75EC aM29F016-75SCB aM29F016-120SCB aM29F016-90EI aM29F016-150EC aM29F016-150EIB aM29F016-150FC aM29F016-120FCB aM29F016-90FC aM29F016-120ECB aM29F016-90EC adVaNCEdMICROdEVICESINC-aM29F016-150EI
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| Description |
LM330 3-Terminal Positive Regulator; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail 16-Megabit097152*8-bit)cmos 5.0 Volt-only,sector Erase flash memory LM32 dual Thermal diode Temperature Sensor with SensorPath™ Bus; ; Qty per Container: 1 LM3310 Step-Up PWM dC/dC Converter with Integrated Op-amp and Gate Pulse Modulation Switch; Package: LLP; No of Pins: 24; Qty per Container: 4500; Container: Reel 16兆位097152 × 8位)cmos 5.0伏只,扇区擦除闪 16-Megabit (2,097,152 x 8-bit) cmos 5.0 Volt-only, Sector Erase flash Memory 2M X 8 flash 5V PROM, 120 ns, PdSO44 16-Megabit (2,097,152 x 8-bit) cmos 5.0 Volt-only, Sector Erase flash Memory 2M X 8 flash 5V PROM, 90 ns, PdSO48 16-Megabit (2,097,152 x 8-bit) cmos 5.0 Volt-only, Sector Erase flash Memory 2M X 8 flash 5V PROM, 150 ns, PdSO48 16-Megabit (2,097,152 x 8-bit) cmos 5.0 Volt-only, Sector Erase flash Memory 2M X 8 flash 5V PROM, 120 ns, PdSO48
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| File Size |
224.41K /
36 Page |
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it Online |
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aMd advanced Micro devices, Inc. SPaNSION LLC adVaNCEd MICRO dEVICES INC
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| Part No. |
aM29LV002 aM29LV002B-90RECB aM29LV002B-120FCB aM29LV002B-100FCB aM29LV002B-120EEB aM29LV002B-100EIB aM29LV002B-120EIB aM29LV002B-100EEB aM29LV002B-100ECB aM29LV002B-120ECB aM29LV002B-90REIB aM29LV002B-100FEB aM29LV002T-120FE aM29LV002T-120FEB aM29LV002B-90REEB aM29LV002T-90REIB aM29LV002T-90RFEB aM29LV002B-120FE aM29LV002T-120EI aM29LV002T-120ECB aM29LV002T-120EIB aM29LV002B-100FIB aM29LV002T-120FIB adVaNCEdMICROdEVICESINC-aM29LV002B-120EE aM29LV002B-120FI aM29LV002B-120EF
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| Description |
2 Megabit (256 K x 8-bit) cmos 3.0 Volt-only/ Boot Sector flash Memory Half Bridge driver, LO Out of Phase with RT, Programmable Oscillating Frequency, 1.2us deadtime in a 8-pin dIP package 2 Megabit (256 K x 8-bit) cmos 3.0 Volt-only, Boot Sector flash Memory 2兆位56亩8位).0伏的cmos只,引导扇区闪存 Connector 连接 2 Megabit (256 K x 8-bit) cmos 3.0 Volt-only, Boot Sector flash Memory 256K X 8 flash 3V PROM, 100 ns, PdSO40 2 Megabit (256 K x 8-bit) cmos 3.0 Volt-only, Boot Sector flash Memory 256K X 8 flash 3V PROM, 120 ns, PdSO40 MB 18C 18#20 PIN RECP 256K X 8 flash 3V PROM, 120 ns, PdSO40 2 Megabit (256 K x 8-bit) cmos 3.0 Volt-only, Boot Sector flash Memory 2兆位256亩8位).0伏的cmos只,引导扇区闪存 256K X 8 flash 3V PROM, 90 ns, PdSO40
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| File Size |
244.85K /
34 Page |
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it Online |
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Price and Availability
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