6a 800v pdf Datasheet P4 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : MAB8401 1496D MAB8461P 2409D AD6633 ZJ30C OP7702 BB504M
	Product Description
	Full Text Search

6a 800v Datasheet PDF File

For 6a 800v Found Datasheets File :: 746 Search Time::1.562ms
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Infineon Technologies AG
Part No.	IDP12E120
OCR Text	... IF 20 16 12 12A 1.6 6a 1.4 8 4 0 0 1.2 0.5 1 1.5 2 V VF 3 1 -60 -20 20 60 100 160 C Tj ...800v, T j = 125C 800 6 Typ. reverse recovery charge Qrr =f(diF/dt) parameter: VR = 800v, Tj = 12...
Description	Fast Switching Diode
File Size	390.30K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SKB02N12007 SKB02N120
OCR Text	... COLLECTOR CURRENT 8A TC=80C 6a TC=110C 4A 1A 50s 150s 500s 0.1A 20ms DC 2A Ic 0.01A 0A 10Hz 100Hz 1kHz 10...800v, VGE = +15V/0V, RG = 91) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0...
Description	Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
File Size	1,155.61K / 13 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SGP02N12007 SGP02N120 SGD02N120 SGI02N120
OCR Text	... COLLECTOR CURRENT 8A TC=80C 6a TC=110C 4A 1A 50s 150s 500s 0.1A 20ms DC 2A Ic 0.01A 0A 10Hz 100Hz 1kHz 10...800v, VGE = +15V/0V, RG = 91) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0...
Description	Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
File Size	375.94K / 13 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4PH50UDPBF IRG4PH50UDPBF-15
OCR Text	...T J = 125C T J = 25C I F = 1 6a I F = 8 .0 A I R R M - (A ) trr - (ns) IF = 3 2 A 20 I F = 32A I F = 16 A I F = 8 .0A 1...800v 800v 4 X I C @25C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Col...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	678.24K / 11 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FQA7N8006 FQA7N80_F109 FQA7N80 FQA7N80F109
OCR Text	..., ID = 250 A VGS = 10 V, ID = 3.6a VDS = 50 V, ID = 3.6a VDS = 25 V, VGS = 0 V, f = 1.0 MHz (Note 4) Min 800 -----3.0 ------ Typ -0...800v N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics V...
Description	800v N-Channel MOSFET
File Size	763.06K / 9 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SGB02N12007 SGB02N120
OCR Text	... COLLECTOR CURRENT 8A TC=80C 6a TC=110C 4A 1A 50s 150s 500s 0.1A 20ms DC 2A Ic 0.01A 0A 10Hz 100Hz 1kHz 10...800v, VGE = +15V/0V, RG = 91) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0...
Description	Fast IGBT in NPT-technology Lower Eoff compared to previous generation
File Size	433.31K / 11 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SGD02N120 SGP02N120 SGB02N120 SGI02N120
OCR Text	... COLLECTOR CURRENT 8A TC=80C 6a TC=110C 4A 50s 1A 150s 500s 0.1A 20ms DC 2A Ic 0.01A 0A 10Hz 100Hz 1kHz 10kHz 10...800v, VGE = +15V/0V, RG = 91) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0...
Description	Fast S-IGBT in NPT-technology
File Size	389.46K / 13 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
Part No.	QM80DY-3H
OCR Text	...mitter open VEB=7V IC=80A, IB=1.6a -IC=80A (diode forward voltage) IC=80A, VCE=5V Min. -- -- -- -- -- -- 100 -- VCC=800v, IC=80A, IB1=-IB2=1.6a -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (pe...
Description	MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
File Size	89.34K / 5 Page	View it Online	Download Datasheet

				Microsemi, Corp. Advanced Power Technology
Part No.	APT1201R2SFLL APT1201R2BFLLG APT1201R2SFLLG APT1001R6BFLLG
OCR Text	... 2 (v gs = 10v, i d = 6a) zero gate voltage drain current (v ds = 1200v, v gs = 0v) zero gate voltage drain current (v ds = 9...800v, v gs = 15v i d = 12a, r g = 5 ? inductive switching @ 125c v dd = 800v, v gs =...
Description	12 A, 1200 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3 12 A, 1200 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 TO-247, 3 PIN POWER MOS 7 R FREDFET
File Size	158.23K / 5 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	IKW03N120H2 Q67040-S4597 IKB03N120H2 IKP03N120H2 Q67040-S4594 Q67040-S4595 IKB03N120H2E3045A INFINEONTECHNOLOGIESAG-Q67040-S4594
OCR Text	... COLLECTOR CURRENT 8A TC=80C 6a TC=110C 4A 10s 1A 50s 100s 0,1A 500s DC 2A Ic 100Hz 1kHz 10kHz 100kHz 0A 10Hz 0,01A 1V...800v, VGE = +15V/0V, RG = 82) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0...
Description	IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT D2Pak 1200V HighSpeed2 IGBT and 600V HighSpeed IGBT with antiparallel fast recovery EmCon™ diode in only one package. IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT TO247 IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT TO220 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode From old datasheet system
File Size	428.03K / 15 Page	View it Online	Download Datasheet

For 6a 800v Found Datasheets File :: 746 Search Time::1.562ms
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |