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  500-1200 Datasheet PDF File

For 500-1200 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    Microsemi, Corp.
Part No. APT20GF120KRG
Description Insulated Gate Bipolar Transistor-NPT Medium Speed; Package: TO-220 [K]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 20; 32 A, 1200 V, N-CHANNEL IGBT, TO-220AB

File Size 71.40K  /  5 Page

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    Advanced Power Technology, Ltd.
Part No. APT25GT120BRG
Description Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 25; 54 A, 1200 V, N-CHANNEL IGBT, TO-247AA

File Size 129.34K  /  6 Page

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    1N957B ON0020 1N958B 1N968B 1N965B 1N963B 1N961B

ON Semiconductor
Part No. 1N957B ON0020 1N958B 1N968B 1N965B 1N963B 1N961B
Description 500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35灏??,10V榻?撼?靛?锛?????绾崇ǔ??????)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,12V齐纳电压,玻璃齐纳稳压二极管) 12 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,15]V齐纳电压,玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,20V齐纳电压,玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,7.5V齐纳电压,玻璃齐纳稳压二极管)
From old datasheet system

File Size 69.77K  /  8 Page

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    Microsemi, Corp.
Part No. APT50GT120B2RDQ2G
Description Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: T-MAX&#153; [B2]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 50; 94 A, 1200 V, N-CHANNEL IGBT, TO-247

File Size 224.58K  /  9 Page

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    Microsemi, Corp.
Part No. APT75GN120J
Description Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP&#174;; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 68; 124 A, 1200 V, N-CHANNEL IGBT

File Size 286.25K  /  6 Page

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    APT35GN120L2DQ2 APT35GN120L2DQ2G

Microsemi, Corp.
Advanced Power Technology
Part No. APT35GN120L2DQ2 APT35GN120L2DQ2G
Description Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: 264 MAX&#153; [L2]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 46; 94 A, 1200 V, N-CHANNEL IGBT

File Size 216.77K  /  9 Page

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    SOLID STATE DEVICES INC
SSDI[Solid States Devices, Inc]
Part No. SDR1212CTJ SDR1210CTJ SDR1212DRJ
Description 12 A, 1200 V, SILICON, RECTIFIER DIODE, TO-257
12AMPS 1000 - 1200 VOLTS 70 nsec ULTRA FAST CENTERTAP RECTIFIER

File Size 56.59K  /  2 Page

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    MUR10120 MUR10120E MUR10120E_D ON2728

Micro Commercial Components, Corp.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MUR10120 MUR10120E MUR10120E_D ON2728
Description SCANSWITCH RECTIFIER 10 AMPERES 1200 VOLTS 10 A, 1200 V, SILICON, RECTIFIER DIODE, TO-220AC
From old datasheet system

File Size 70.63K  /  4 Page

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    APT15GN120BDQ1 APT15GN120BDQ1G

Microsemi, Corp.
Advanced Power Technology
Part No. APT15GN120BDQ1 APT15GN120BDQ1G
Description Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: TO-247 [B]; BV(CES) (V): 1200; IC (A): 22; 45 A, 1200 V, N-CHANNEL IGBT, TO-247AD
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

File Size 224.50K  /  9 Page

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    BKC International Electronics
ETC[ETC]
Part No. 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N541 1N636 1N277 1N278 1N281 1N287 1N288 1N289 1N290 1N291 1N294A 1N297 1N297A 1N298 1N298A 1N314 1N355 1N367 1N417 1N418 1N419 1N447 1N448 1N449 1N451 1N452 1N453 1N454 1N455 1N477 1N478 1N479 1N480 1N490 1N497 1N498 1N501 1N502 1N527 1N542 1N568 1N571 1N616 1N618 1N631 1N632 1N633 1N634 1N635 1N617
Description 165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode

File Size 2,015.49K  /  59 Page

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