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  5.24.6mm Datasheet PDF File

For 5.24.6mm Found Datasheets File :: 7401    Search Time::1.953ms    
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    IRF9530N

IRF[International Rectifier]
Part No. IRF9530N
OCR Text ...0 -56 79 0.53 20 250 -8.4 7.9 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Res...24 0) -B 4.69 ( .18 5 ) 4.20 ( .16 5 ) 1 .32 (.05 2) 1 .22 (.04 8) 2.87 (.11 3) 2.62 (.10 3) 4...
Description Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

File Size 109.25K  /  8 Page

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    IRF9540N IRF9540 IRF9540NPBF

IRF[International Rectifier]
Part No. IRF9540N IRF9540 IRF9540NPBF
OCR Text ...16 -76 140 0.91 20 430 -11 14 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Res...24 0) -B 4.69 ( .18 5 ) 4.20 ( .16 5 ) 1 .32 (.05 2) 1 .22 (.04 8) 2.87 (.11 3) 2.62 (.10 3) 4...
Description -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)

File Size 121.23K  /  8 Page

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    IRF9620 FN2283

INTERSIL[Intersil Corporation]
Part No. IRF9620 FN2283
OCR Text ... Specified IRF9620 -200 -200 -3.5 -2 -14 20 40 0.32 290 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Breakdow...24 IRF9620 Typical Performance Curves 1.25 ID = 250A NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAG...
Description 3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET
3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET
3.5A 200V 1.500 Ohm P-Channel Power MOSFET
From old datasheet system

File Size 57.96K  /  7 Page

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    IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR
OCR Text ...3.7 43 0.29 20 140 -6.7 4.3 -4.5 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter ...24 --- RD = 4.0, See Fig. 10 Between lead, nH 7.5 --- and center of die contact 270 --- VGS = 0V 17...
Description Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET(减振钢板基本\u003d- 60V的,的Rds(on)\u003d 0.50ohm,身份证\u003d- 6.7A
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
HEXFET? Power MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 357.87K  /  10 Page

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    IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL

IRF[International Rectifier]
Part No. IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL
OCR Text ... 3.7 60 0.40 20 240 -11 6.0 -4.5 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter ...24 .40 (.9 61 ) 3 3 0.4 0 (1 .19 7) MA X . 4 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, C...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A)
Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)

File Size 307.08K  /  10 Page

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    IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text ... for 10 seconds Max. -12 -8.5 -48 3.8 45 0.30 20 96 -7.2 4.5 -5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/n...24 --- RD = 3.7, See Fig. 10 Between lead, nH 7.5 and center of die contact 350 --- VGS = 0V 170 --...
Description -60V Single P-Channel HEXFET Power MOSFET in a TO-262 package
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.175ohm,身份证\u003d- 12A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)

File Size 167.05K  /  10 Page

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    IRF9Z24N IRF9Z24NPBF

IRF[International Rectifier]
Part No. IRF9Z24N IRF9Z24NPBF
OCR Text ...-32 or M3 screw Max. -12 -8.5 -48 45 0.30 20 96 -7.2 4.5 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C ...24 --- RD = 3.7, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of di...
Description -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

File Size 105.16K  /  8 Page

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    IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR

IRF[International Rectifier]
Part No. IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR
OCR Text ... 3.7 88 0.59 20 370 -18 8.8 -4.5 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter ...24 .40 (.9 61 ) 3 3 0.4 0 (1 .19 7) MA X . 4 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, C...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A)
Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)

File Size 330.76K  /  10 Page

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    MAX1020 MAX1020BETX MAX1021 MAX1021BETX MAX1022 MAX1022BETX MAX1023 MAX1023BETX MAX1057 MAX1057BETM MAX1058 MAX1058BETM

MAXIM[Maxim Integrated Products]
Part No. MAX1020 MAX1020BETX MAX1021 MAX1021BETX MAX1022 MAX1022BETX MAX1023 MAX1023BETX MAX1057 MAX1057BETM MAX1058 MAX1058BETM
OCR Text ...23/MAX1057) and from +4.75V to +5.25V (MAX1020/MAX1022/ MAX1058). The devices consume 2.5mA at 300ksps throughput, only 22A at 1ksps through...24 VREF VREF / 2 1 V A pF fCLK SYMBOL tACQ tCONV (Note 5) Internally clocked Externally clocked Inte...
Description 10-Bit Multichannel ADCs/DACs with FIFO Temperature Sensing and GPIO Ports
10-Bit, Multichannel ADCs/DACs with FIFO, Temperature Sensing, and GPIO Ports

File Size 1,321.21K  /  47 Page

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    MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Part No. MAX2320 MAX2320EUP MAX2321 MAX2321EUP MAX2322 MAX2322EUP MAX2324 MAX2324EUP MAX2325 MAX2326 MAX2326EUP MAX2327 MAX2327EUP MAX2329 MAX2323
OCR Text ...6.3mm RLNA 3 LNAINH 4 LNAINL 5 BAND 6 LIN 7 GAIN 8 LOLIN 9 LOHIN 10 MAX2320 MAX2321 MAX2326 16 CDMA15 BUFFEN 14 VCC 13 FMOUT 12 LOL...24/26/27 ABSOLUTE MAXIMUM RATINGS VCC to GND ........................................................
Description Adjustable, High-Linearity, SiGe, Dual-Band, LNA/Mixer ICs
Adjustable / High-Linearity / SiGe Dual-Band LNA/Mixer ICs
Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs

File Size 521.05K  /  28 Page

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