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  423.0mhz Datasheet PDF File

For 423.0mhz Found Datasheets File :: 42    Search Time::2.953ms    
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    SamHop Microelectronics...
Part No. STP06N20 STF06N20
OCR Text ...v gs(th) 1v g fs 4 s v sd c iss 423 pf c oss 24 pf c rss 16 pf 9.6 nc 8.7 nc q gs 22.2 nc q gd 4.9 t d(on) ns t r 0.94 ns t d(off) 2 ns t f ...0mhz b v ds =100v,i d =1a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0...
Description Super high dense cell design for low RDS(ON).
N-Channel Enhancement Mode Field Effect Transistor

File Size 205.36K  /  11 Page

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    Taiwan Semiconductor Co...
Part No. TSM600N25E
OCR Text ...= 0v, f = 1.0mhz c iss -- 423 -- pf output capacitance c oss -- 74 -- reverse transfer capacitance c rss -- 12 -- switching turn-on delay time (note 4,5) v dd = 125v, i d = 8a, r gen =25 ? t d(on) -- 14...
Description 250V N-Channel Power MOSFET

File Size 444.13K  /  7 Page

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    IRG4PSC71KD

International Rectifier
Part No. IRG4PSC71KD
OCR Text ...d(off) turn-off delay time 282 423 i c = 60a, v cc = 480v t f fall time 97 146 v ge = 15v, r g = 5.0 w e on turn-on switching loss 3....0mhz t rr diode reverse recovery time 82 120 ns t j = 25c see fig. 140 210 t j = 125c ...
Description 600V UltraFast 8-25 kHz Copack IGBT in a TO-274AA package

File Size 203.78K  /  10 Page

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    UTC606P-H UTC606PG-AG6-R

Unisonic Technologies
Part No. UTC606P-H UTC606PG-AG6-R
OCR Text ...e transfer capacitance c rss 423 pf switching parameters (note) total gate charge q g v gs =-4.5v, v ds =-6v, i d =-6a 18 25 nc gate to source charge q gs 3 nc gate to drain charge q gd 4.2 nc turn-on delay time t d ( on...
Description P-CHANNEL 1.8V TRENCH MOSFET

File Size 164.58K  /  3 Page

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    IRG4PSC71KD

IRF[International Rectifier]
Part No. IRG4PSC71KD
OCR Text ...5V 82 -- 107 -- TJ = 25C ns 282 423 IC = 60A, VCC = 480V 97 146 VGE = 15V, RG = 5.0 3.95 -- Energy losses include "tail" 2.33 -- mJ and diod...0MHz 82 120 ns TJ = 25C See Fig. 140 210 TJ = 125C 14 IF = 60A 8.2 12 A TJ = 25C See Fig. 13 20 TJ =...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.83V, @Vge=15V, Ic=60A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V Vce(on)typ.=1.83V @Vge=15V Ic=60A)

File Size 192.31K  /  10 Page

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    2SC4570

Inchange Semiconductor Company Limited
Part No. 2SC4570
OCR Text ...0.453 0.448 0.445 0.439 0.429 0.423 0.417 0.413 0.406 0.401 0.397 0.393 0.394 0.395 0.396 S22 ANG -13.3 -22.8 -28.2 -31.4 -33.4 -35.0 -36.3 -37.6 -38.8 -40.1 -41.5 -42.9 -44.4 -45.7 -47.1 -48.4 -49.8 -51.3 -52.7 -54.9 -56.7 -58.9 -61.1 ...
Description isc Silicon NPN RF Transistor

File Size 135.24K  /  9 Page

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    IRF[International Rectifier]
Part No. IRLR3714ZPBF IRLU3714ZPBF IRLU3714Z IRLR3714Z
OCR Text ... 1 2 Ri (C/W) 1.2525 2.423 0.6041 i (sec) 0.00015 0.00098 0.00984 0.01 Ci= i/Ri Ci= i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0...
Description HEXFET Power MOSFET

File Size 256.88K  /  11 Page

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