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4.9-5.9ghz Datasheet PDF File

For 4.9-5.9ghz Found Datasheets File :: 872 Search Time::6.234ms
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				SIEMENS[Siemens Semiconductor Group]
Part No.	BFP196W Q62702-F1576
OCR Text	...6W RIs Q62702-F1576 1=E 2=C 3=E 4=B Package SOT-343 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Coll...9 8 7 12 11 10 0.7V 9 8 0 20 40 60 80 mA IC 120 4 0 20 40 60 80 5 1V 6 1V 0.7V mA IC 120...
Description	From old datasheet system NPN Silicon RF Transistor(For low noise low distortion broadband amplifiers in antenna and telecommunications) NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications)
File Size	60.65K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFR181W Q62702-F1491
OCR Text	...CE = 61 101 175 fF fF fF 0.57 0.4 0.43 0.5 0 nH nH nH nH nH Valid up to 6 GHz For examples and ready to use parameters please contact you...9 8 0 2 4 6 8 10 12 14 mA IC 18 1V 2V 3V G 11 10 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 1V ...
Description	NPN Silicon RF Transistor )For low noise/ high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) From old datasheet system
File Size	56.17K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFR181 Q62702-F1314
OCR Text	...5.htm Semiconductor Group 4 Dec-11-1996 BFR 181 Total power dissipation Ptot = f (TA, TS) Package mounted on epoxy 200 mW Ptot 160 TS 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 C 150 TA ,TS TA Perm...
Description	From old datasheet system NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
File Size	57.16K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFS480 Q62702-F1531
OCR Text	...tion BFS 480 REs Q62702-F1531 1/4 = B 2/5 = E 3/6 = C Package SOT-363 data below is of a single transistor Maximum Ratings Paramete...9.5 18 14 - IC = 3 mA, VCE = 5 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 1) Gms = \|S21/S12\| Semi...
Description	NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems) NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) From old datasheet system
File Size	52.38K / 6 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	HA22033
OCR Text	...(2.7V, 1.7mA typ.) Low noise (1.4 dB typ. @1.5GHz) High power gain (14 dB typ. @1.5GHz) Built-in matching circuits (50) Small surface mount ...9 0.2 1.9 0.95 0.95 0.4 0.1 0.4 0.1 0.6 + 0.2 1.1- 0.1 0.16 - 0.06 + 0.1 0.2 1.6 + 0...
Description	GaAs MMIC Low Noise Amplifier for Micro Wave Application
File Size	43.33K / 12 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
Part No.	MRFIC1801
OCR Text	...stems (PCS) applications, and 2.4 GHz ISM band applications. The MRFIC1801 is a single pole, double throw reflective antenna switch featurin...9 GHz) Characteristic Antenna to Receive Insertion Loss (RX Mode, PIN = 0 dBm) Transmit to Antenna ...
Description	1.8 GHz TRANSMIT/RECEIVE ANTENNA SWITCH GaAs MONOLITHIC INTEGRATED CIRCUIT
File Size	66.75K / 4 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRFIC1803
OCR Text	...GND GND RF OUT GND VDD 1 2 3 4 5 6 7 8 ACTIVE BALANCED MIXER EXCITER LO BUFFER AND SWITCH 16 15 RX EN GND 14 LO IN 13 GND 12 GND 11 10 9 IF IN GND TX EN Pin Connections and Functional Block Diagram REV 3 (c)MOTOROLA RF ...
Description	1.8 GHz UPMIXER, EXCITER AND LO AMP GaAs MONOLITHIC INTEGRATED CIRCUIT
File Size	117.40K / 6 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFP193W Q62702-F1577
OCR Text	...3W RCs Q62702-F1577 1=E 2=C 3=E 4=B Package SOT-343 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Coll...9 dB 1.3 2.1 - IC = 50 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VC...
Description	NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) From old datasheet system
File Size	60.05K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BFP193 Q62702-F1282 BFP193Q62702-F1282
OCR Text	...93 RCs Q62702-F1282 1=C 2=E 3=B 4=E Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Coll...9 dB 1.3 2.1 - IC = 50 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VC...
Description	NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) From old datasheet system
File Size	60.37K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1492 BFR182W
OCR Text	...ion Symbol Values 12 20 20 2 35 4 mW 250 150 - 65 ... + 150 - 65 ... + 150 240 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1)...9 - IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f...
Description	NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA) NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) From old datasheet system
File Size	55.96K / 7 Page	View it Online	Download Datasheet

For 4.9-5.9ghz Found Datasheets File :: 872 Search Time::6.234ms
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