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12124 AD149IV 4C4M4E8 235007 THN6201S HAT3015R 53C256 VSC7124
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  4.125v Datasheet PDF File

For 4.125v Found Datasheets File :: 3069    Search Time::2.203ms    
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    RCX511N25

ROHM
Part No. RCX511N25
OCR Text ...) drive circuits can be simple. 4) parallel use is easy. 5) pb-free lead plating ; rohs compliant 6) 100% avalanche tested ? packaging speci...125v, i d = 51a -6 . 5 nc 204 a forward voltage v sd *4 v gs = 0v, i s = 51a --1 . 5v 175 - ns ...
Description 10V Drive Nch MOSFET

File Size 472.10K  /  14 Page

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    RCX220N25

ROHM
Part No. RCX220N25
OCR Text ...) drive circuits can be simple. 4) parallel use is easy. 5) pb-free lead plating ; rohs compliant ? outline v dss 250v to-220fm r ds(on) (...125v - - ? gate charge characteristics (t a = 25c) parameter symbol conditions values unit min. typ...
Description 10V Drive Nch MOSFET

File Size 447.11K  /  14 Page

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    RCX100N25

ROHM
Part No. RCX100N25
OCR Text ...) drive circuits can be simple. 4) parallel use is easy. 5) pb-free lead plating ; rohs compliant 6) 100% avalanche tested l packaging speci...125v, i d = 10a - 7.3 nc 40 a forward voltage v sd *4 v gs = 0v, i s = 10a - - 1.5 v 100 - ns t...
Description 10V Drive Nch MOSFET

File Size 418.32K  /  13 Page

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    IRF[International Rectifier]
Part No. IRHNB7264SE IRHNB7264SE-15
OCR Text ...diation Units 34 21 136 300 2.4 20 500 34 30 2.5 -55 to 150 300 (for 5 sec.) 3.3 (Typical) A W W/C V mJ A mJ V/ns o C g ...125V VDD =125V, ID =34A, VGS =12V, RG = 2.35 BVDSS Drain-to-Source Breakdown Voltage BV DSS /TJ T...
Description Simple Drive Requirements
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3)
250V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-3 package

File Size 237.36K  /  8 Page

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    IRF[International Rectifier]
Part No. IRHNA67264 IRHNA63264
OCR Text ...0 31.5 200 250 2.0 20 240 50 25 4.1 -55 to 150 300 (for 5s) 3.3 (Typical) Pre-Irradiation Units A W W/C V mJ A mJ V/ns o C g ...125V VDD = 125V, ID = 50A, VGS = 12V, RG = 2.35 ns nH Measured from the center of drain pad...
Description RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2)

File Size 185.26K  /  8 Page

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    IRF[International Rectifier]
Part No. IRHMS67264 IRHMS63264
OCR Text ...8.5 180 208 1.67 20 251 45 20.8 4.4 -55 to 150 Pre-Irradiation Units A W W/C V mJ A mJ V/ns o C g 300 (0.063 in. /1.6 mm fr...125V VDD = 125V, ID = 45A VGS =12V, RG = 2.35 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

File Size 170.73K  /  8 Page

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    IRF[International Rectifier]
Part No. IRHF57214SE
OCR Text ...es refer to the last page 2.2 1.4 8.8 15 0.12 20 19 2.2 1.5 13.8 -55 to 150 Pre-Irradiation Units A W W/C V mJ A mJ V/ns C 300 (...125V VDD = 125V, ID = 2.2A VGS =12V, RG = 7.5 BV DSS /T J Temperature Coefficient of Breakdown --...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

File Size 210.07K  /  8 Page

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    FDPF2710T

Fairchild Semiconductor Corporation
Part No. FDPF2710T
OCR Text ...atings 250 30 25 18.8 100 145 4.5 62.5 0.5 -55 to +150 300 Unit V V A A A mJ V/ns W W/C C C Single Pulsed Avalanche Energy Peak Dio...125V, ID = 50A VGS = 10V (Note 4, 5) (Note 4, 5) VDD = 125V, ID = 50A VGS = 10V, RGEN = 25 --...
Description Zener Diode; Application: General; Pd (mW): 400; Vz (V): 2.7 to 2.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
250V N-Channel PowerTrench MOSFET

File Size 490.74K  /  8 Page

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    MJE13005G-X-TMS2-T MJE13005G-X-TMS4-T MJE13005L-X-TMS4-T

Unisonic Technologies
Part No. MJE13005G-X-TMS2-T MJE13005G-X-TMS4-T MJE13005L-X-TMS4-T
OCR Text ...inductive switching matrix 2 to 4 amp, 25 and 100 t c @ 3a, 100 is 180 ns (typ) * 700v blocking capability * soa and switching appli...125v, i c =2a, i b1 =i b2 =0.4a, t p =25 s, duty cycle 1% 0.025 0.1 s rise time t r 0.3 0....
Description NPN SILICON POWER TRANSISTOR

File Size 478.19K  /  10 Page

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