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  3.900v Datasheet PDF File

For 3.900v Found Datasheets File :: 1835    Search Time::0.781ms    
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    2SK1942-01

Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
Part No. 2SK1942-01
OCR Text ...GS PD T ch T stg Rating 900 900 3 12 30 80 150 -55 ~ +150 Unit V V A A V W C C > Equivalent Circuit - Electrical Characteristics (TC=2...900V Tch=25C VGS=0V Tch=125C VGS=30V VDS=0V ID=1,5A VGS=10V ID=1,5A VDS=25V VDS=25V VGS=0V f=1MHz VC...
Description N-channel MOS-FET 3 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 196.93K  /  2 Page

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    Microsemi
Part No. APT43GA90S APT43GA90B
OCR Text ... i c = 25a t j = 25c 2.5 3.1 t j = 125c 2.2 v ge(th) gate emitter threshold voltage v ge =v ce , i c = 1ma 3 4.5 6 i ces zero gate voltage collector current v ce = 900v, v ge = 0v t j = 25c 250 a t j = 125c 1000 i...
Description IGBT w/o anti-parallel diode

File Size 187.52K  /  6 Page

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    Microsemi
Part No. APT35GA90B APT35GA90S
OCR Text ... i c = 18a t j = 25c 2.5 3.1 t j = 125c 2.2 v ge(th) gate emitter threshold voltage v ge =v ce , i c = 1ma 3 4.5 6 i ces zero gate voltage collector current v ce = 900v, v ge = 0v t j = 25c 250 a t j = 125c 1000 i...
Description IGBT w/o anti-parallel diode

File Size 199.34K  /  6 Page

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    APTGT75DA170D1G

Microsemi Corporation
Part No. APTGT75DA170D1G
OCR Text 3 VCES = 1700V IC = 75A @ Tc = 80C Application * * * AC and DC motor control Switched Mode Power Supplies Power Factor Correction Q2 ...900V Inductive Switching (25C) VGE = 15V VBus = 900V IC = 75A RG = 18 Inductive Switching (125C) VGE...
Description Boost chopper Trench Field Stop IGBT Power Module

File Size 178.53K  /  4 Page

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    Microsemi
Part No. APTGT100H170G
OCR Text ...= 0v v ce = 25v f = 1mhz 0.3 nf t d(on) turn-on delay time 370 t r rise time 40 t d(off) turn-off delay time 65...900v i c = 100a r g = 4.7 ? 180 ns t d(on) turn-on delay time 400 t r rise tim...
Description Full Bridge

File Size 335.60K  /  6 Page

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    Microsemi
Part No. APTGT100DH170G
OCR Text ...= 0v v ce = 25v f = 1mhz 0.3 nf t d(on) turn-on delay time 370 t r rise time 40 t d(off) turn-off delay time 65...900v i c = 100a r g = 4.7 ? 180 ns t d(on) turn-on delay time 400 t r rise tim...
Description Asymmetrical Bridge

File Size 331.12K  /  6 Page

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    Microsemi
Part No. APT64GA90LD30 APT64GA90B2D30
OCR Text ... i c = 38a t j = 25c 2.5 3.1 t j = 125c 2.2 v ge(th) gate emitter threshold voltage v ge =v ce , i c = 1ma 3 4.5 6 i ces zero gate voltage collector current v ce = 900v, v ge = 0v t j = 25c 350 a t j = 125c 1500 i...
Description IGBT w/ anti-parallel diode

File Size 216.88K  /  9 Page

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    STB3NC90Z-1 STP3NC90ZFP STP3NC90Z

STMICROELECTRONICS[STMicroelectronics]
Part No. STB3NC90Z-1 STP3NC90ZFP STP3NC90Z
OCR Text 3.2 - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESHTMIII MOSFET TYPE STP3NC90Z/FP STB3NC90Z-1 s s VDSS 900V 900V RDS(on) < 3.5 < 3.5 ID 3.5 A 3.5 A 3 1 2 s s s TYPICAL RDS(on) = 3.2 EXTREMELY HIGH dv/dt AND CAPABILI...
Description N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH?III MOSFET
N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESHIII MOSFET
N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH⑩III MOSFET

File Size 333.77K  /  11 Page

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    APTGT75DA170T1G

Microsemi Corporation
Part No. APTGT75DA170T1G
OCR Text ...on CR1 Q2 CR2 9 10 1 2 3 4 Features NTC * 12 * * * Benefits * * * * * * Trench + Field Stop IGBT(R) Technology - Lo...900V IC = 75A RG = 10 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 75A RG = 6.8 VGE = 15V T...
Description Boost chopper Trench Field Stop IGBT? Power Module
Boost chopper Trench Field Stop IGBT垄莽 Power Module

File Size 277.31K  /  5 Page

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