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  25w channel Datasheet PDF File

For 25w channel Found Datasheets File :: 885    Search Time::1ms    
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    APT5018BFLL APT5018SFLL

ADPOW[Advanced Power Technology]
Part No. APT5018BFLL APT5018SFLL
OCR Text ...rting T = +25C, L = 3.32mH, R = 25w, Peak I = 27A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS

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    APT5018BLL APT5018SLL

ADPOW[Advanced Power Technology]
Part No. APT5018BLL APT5018SLL
OCR Text ...arting T = +25C, L =3.32mH, R = 25w, Peak I = 27A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS.

File Size 51.49K  /  2 Page

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    APT5020BLC APT5020SLC

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5020BLC APT5020SLC
OCR Text ...arting T = +25C, L =3.85mH, R = 25w, Peak I = 26A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, ...
Description POWER MOS VI 500V 26A 0.200 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-channel enhancement mode power MOSFETs.
Power MOS VITM is a new generation of low gate charge/ high voltage N-channel enhancement mode power MOSFETs.

File Size 34.78K  /  2 Page

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    APT5024BFLL APT5024SFLL APT10078BFLL APT10078SFLL

ADPOW[Advanced Power Technology]
Part No. APT5024BFLL APT5024SFLL APT10078BFLL APT10078SFLL
OCR Text ...rting T = +25C, L = 3.97mH, R = 25w, Peak I = 22A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID[Cont.] di/dt 700A/s VR VDSS TJ 150C 1 Repetitive Rating: Pulse width limited b...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS.

File Size 58.44K  /  2 Page

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    APT50M38JFLL

ADPOW[Advanced Power Technology]
Part No. APT50M38JFLL
OCR Text ...h < 380 S, Duty Cycle < 2% = 25w, Peak IL = 91A APT Reserves the right to change, without notice, the specifications and information contained herein. SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (....
Description Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS.

File Size 53.39K  /  2 Page

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    APT50M38JLL

Advanced Power Technology
Part No. APT50M38JLL
OCR Text ...rting T = +25C, L = 0.87mH, R = 25w, Peak I = 91A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS.

File Size 51.38K  /  2 Page

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    APT50M50JFLL APT5014 APT5014BFLL APT5014SFLL

ADPOW[Advanced Power Technology]
Part No. APT50M50JFLL APT5014 APT5014BFLL APT5014SFLL
OCR Text ...rting T = +25C, L = 1.27mH, R = 25w, Peak I = 71A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID Cont. di/dt 700A/s VR VDSS TJ 150C [ ] APT Reserves the right to change, without ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS.

File Size 58.44K  /  2 Page

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    APT50M50JLC APT5010JLC

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT50M50JLC APT5010JLC
OCR Text ...rting T = +25C, L = 1.21mH, R = 25w, Peak I = 77A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, ...
Description POWER MOS VI 500V 77A 0.050 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-channel enhancement mode power MOSFETs.
Power MOS VITM is a new generation of low gate charge/ high voltage N-channel enhancement mode power MOSFETs.

File Size 34.93K  /  2 Page

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    APT50M50L2FLL

ADPOW[Advanced Power Technology]
Part No. APT50M50L2FLL
OCR Text ...rting T = +25C, L = 0.81mH, R = 25w, Peak I = 89A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID Cont. di/dt 700A/s VR VDSS TJ 150C [ ] 1 Repetitive Rating: Pulse width limite...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS.

File Size 52.74K  /  2 Page

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    APT50M50L2LL

ADPOW[Advanced Power Technology]
Part No. APT50M50L2LL
OCR Text ...rting T = +25C, L = 0.85mH, R = 25w, Peak I = 87A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS.

File Size 50.41K  /  2 Page

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