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  256k-word Datasheet PDF File

For 256k-word Found Datasheets File :: 1820    Search Time::1.359ms    
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    CY7C1265KV18 CY7C1276KV18 CY7C1265KV18-550BZC CY7C1265KV18-400BZC CY7C1265KV18-400BZXC CY7C1265KV18-450BZXC CY7C1263KV18

Cypress Semiconductor
Part No. CY7C1265KV18 CY7C1276KV18 CY7C1265KV18-550BZC CY7C1265KV18-400BZC CY7C1265KV18-400BZXC CY7C1265KV18-450BZXC CY7C1263KV18-400BZC CY7C1263KV18-400BZI CY7C1263KV18-500BZXC CY7C1263KV18-550BZI CY7C1261KV18 CY7C1263KV18-550BZXC CY7C1265KV18-550BZXC
OCR Text ...ss Register 18 A(17:0) 256K x 36 Array 256K x 36 Array 256K x 36 Array 256K x 36 Array K K CLK Gen. Control Logic ...word of data is driven onto the Q[17:0] using K as the output timing reference. On the subsequent ri...
Description 36-Mbit QDR? II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)

File Size 658.28K  /  28 Page

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    24C256 24C128

List of Unclassifed Man...
ETC[ETC]
List of Unclassifed Manufacturers
Part No. 24C256 24C128
OCR Text 256K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 16K/32K X 8 BIT EEPROM FEATURES : * Extended Power Supply Voltage Single Vcc for Read and Progr...WORD n ACK tWC STOP CONDITION START CONDITION Note: The write cycle time tWC is the tim...
Description    CMOS I2C 2-WIRE BUS 128K/256K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 16K/32K X 8 BIT EEPROM

File Size 36.22K  /  8 Page

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    CY7C1415KV18 CY7C1415KV18-250BZC CY7C1415KV18-250BZI CY7C1415KV18-250BZXI CY7C1415KV18-250BZXC CY7C1413KV18 CY7C1413KV18

Cypress Semiconductor
Part No. CY7C1415KV18 CY7C1415KV18-250BZC CY7C1415KV18-250BZI CY7C1415KV18-250BZXI CY7C1415KV18-250BZXC CY7C1413KV18 CY7C1413KV18-250BZC CY7C1413KV18-250BZXC CY7C1413KV18-250BZXI CY7C1413KV18-300BZC CY7C1413KV18-300BZXC CY7C1413KV18-333BZC CY7C1413KV18-250BZI
OCR Text ...ss Register 18 A(17:0) 256K x 36 Array 256K x 36 Array 256K x 36 Array 256K x 36 Array K K CLK Gen. Control Logic ...word of data is driven onto the Q[17:0] using C as the output timing reference. On the subsequent ri...
Description 36-Mbit QDR? II SRAM 4-Word Burst Architecture

File Size 642.79K  /  33 Page

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    CY7C11651KV18 CY7C11651KV18-400BZXC CY7C11611KV18 CY7C11631KV18 CY7C11761KV18

Cypress Semiconductor
Part No. CY7C11651KV18 CY7C11651KV18-400BZXC CY7C11611KV18 CY7C11631KV18 CY7C11761KV18
OCR Text ...ss Register 18 A(17:0) 256K x 18 Array 256K x 18 Array 256K x 18 Array 256K x 18 Array K K CLK Gen. Control Logic ...word of data is driven onto the Q[17:0] using K as the output timing reference. On the subsequent ri...
Description 18-Mbit QDR? II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

File Size 621.38K  /  29 Page

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    AT52BR3224AT AT52BR3224AT-70CI AT52BR3228AT-70CI AT52BR3224A AT52BR3224A-70CI AT52BR3228A AT52BR3228A-70CI AT52BR3228AT

ATMEL[ATMEL Corporation]
Part No. AT52BR3224AT AT52BR3224AT-70CI AT52BR3228AT-70CI AT52BR3224A AT52BR3224A-70CI AT52BR3228A AT52BR3228A-70CI AT52BR3228AT
OCR Text ... SRAM * * * * * * 4-megabit (256K x 16)/8-megabit (512K x 16) 2.7V to 3.3V VCC 70 ns Access Time Fully Static Operation and Tri-state Out...Word Program) is exited by powering down the device, or by pulsing the RESET pin low for a minimum o...
Description 32 Mbit Single-plane Flash combined with a 8M bit SRAM
32 Mbit Single-plane Flash combined with a 4M bit SRAM
32-megabit Flash 4-megabit/ 8-megabit SRAM Stack Memory

File Size 350.23K  /  46 Page

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    SHARP[Sharp Electrionic Components]
Part No. LH28F400SU-LC
OCR Text 256K x 16) Flash Memory 56-PIN TSOP TOP VIEW * 5 V Write/Erase Operation (5 V VPP, 3.3 V VCC) - No Requirement for DC/DC Converter to W...WORD-SELECT ADDRESSES: Select a word within one 16K block. These addresses are latched during Data W...
Description 4M (512K 】 8, 256K 】 16) Flash Memory

File Size 296.28K  /  37 Page

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    SHARP[Sharp Electrionic Components]
Part No. LH28F400SUB-Z0 LH28F400SUB
OCR Text 256K x 16) Flash Memory TOP VIEW * User-Configurable x8 or x16 Operation * 5 V Write/Erase Operation (5 V VPP, 3.3 V VCC) - No Requirem...WORD-SELECT ADDRESSES: Select a word within one 16K block. These addresses are latched during Data W...
Description 4M (512K 】 8, 256K 】 16) Flash Memory

File Size 274.05K  /  34 Page

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M66287FP
OCR Text ...by 3-system individual input of 256k-word x 8-bit FIFO Mode2 : Simultaneous output of 1 to 3-line delay data by 1-system input of 256k-word x 8-bit FIFO Mode3 : Simultaneous output of 1 to 2-line delay data by 1-system input of 256k-word x ...
Description 262144-word x 8-bit x 3-FIELD MEMORY

File Size 184.38K  /  21 Page

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    A418316V-35U A418316V-25 A418316V-25U A418316S-25

http://
AMIC Technology
Part No. A418316V-35U A418316V-25 A418316V-25U A418316S-25
OCR Text 256k x 16 cmos dynamic ram with fast page mode preliminary (july, 2003,version 0.0) amic technology, inc. document title 2...word by 16 - bit configuration. this product can execute byte write and byte read operation via two...
Description 256K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
   256K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE

File Size 266.67K  /  25 Page

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    HN58X24128FPI HN58X24128I HN58X24128TI HN58X24256FPI HN58X24256TI HN58X24128I/HN58X24256I

HITACHI[Hitachi Semiconductor]
Part No. HN58X24128FPI HN58X24128I HN58X24128TI HN58X24256FPI HN58X24256TI HN58X24128I/HN58X24256I
OCR Text 256k EEPROM (32-kword x 8-bit) ADE-203-1029B (Z) Rev. 2.0 Nov. 26, 1999 Description HN58X24xxx series are two-wire serial interface EEPR...word. This happens during ninth clock cycle. The transmitter keeps bus open to receive acknowledgmen...
Description Two-wire serial interface, 128k EEPROM (16-kword x 8-bit), 256k EEPROM (32-kword x 8-bit)
Two-wire serial interface/ 128k EEPROM (16-kword x 8-bit)/ 256k EEPROM (32-kword x 8-bit)
Serial EEPROMs

File Size 66.68K  /  22 Page

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