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  221a-09 Datasheet PDF File

For 221a-09 Found Datasheets File :: 410    Search Time::1.016ms    
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    IRF530_D ON0283 IRF530-D IRF530/D

Motorola, Inc.
ON Semiconductor
Part No. IRF530_D ON0283 IRF530-D IRF530/D
OCR Text ...= 0.140 W (R) G S CASE 221a-09 TO-220AB MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 1.0 M) Gate-to-Source Voltage -- Continuous Gate-to-Source Voltage -- Single ...
Description 100V4A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管(N沟道增强型硅门))
TMOS POWER FET 14 AMPERES
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate

File Size 162.84K  /  8 Page

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    IRF540_D ON0285 IRF540/D IRF540-D IRF540

Motorola, Inc.
ON Semiconductor
Part No. IRF540_D ON0285 IRF540/D IRF540-D IRF540
OCR Text ....070 OHMS (R) G S CASE 221a-09 TO-220AB MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 1.0 M) Gate-to-Source Voltage -- Continuous Gate-to-Source Voltage -- Non-rep...
Description 27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管(N沟道增强型硅门))
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate

File Size 139.23K  /  6 Page

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    ONSEMI[ON Semiconductor]
Part No. MGP14N60E_D ON1853 MGP14N60E ON1852
OCR Text ...GE C G C G E E CASE 221a-09 STYLE 9 TO-220AB MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Gate Voltage (RGE = 1.0 M) Gate-Emitter Voltage -- Continuous Collector Current -- Con...
Description IGBT IN TO-220 14 A @ 90 18 A @ 25 600 VOLTS
From old datasheet system
SHORT CIRCUIT RATED LOW ON-VOLTAGE

File Size 117.90K  /  5 Page

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    MGP4N60ED_D MGP4N60ED ON1873 ON1872

ON Semiconductor
Part No. MGP4N60ED_D MGP4N60ED ON1873 ON1872
OCR Text ...N-VOLTAGE G C E E CASE 221a-09 STYLE 9 TO-220AB MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Gate Voltage (RGE = 1.0 M) Gate-Emitter Voltage -- Continuous Collector Current -- Con...
Description IGBT & DIODE IN TO-220 4.0 A @ 90 6.0 A @ 25 600 VOLTS
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
From old datasheet system

File Size 142.07K  /  6 Page

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    MGP4N60E_D ON1874 MGP4N60E ON1871

ON Semiconductor
Part No. MGP4N60E_D ON1874 MGP4N60E ON1871
OCR Text ...GE C G C G E E CASE 221a-09 STYLE 9 TO-220AB MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Gate Voltage (RGE = 1.0 M) Gate-Emitter Voltage -- Continuous Collector Current -- Con...
Description Insulated Gate Bipolar Transistor
From old datasheet system
IGBT IN TO-220 4.0 A @ 90 6.0 A @ 25 600 VOLTS

File Size 117.09K  /  5 Page

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    ON Semi
Part No. MAC16D_D ON0348
OCR Text ... 800 VOLTS MT1 MT2 G CASE 221a-09 (TO-220AB) Style 4 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Symbol VDRM Parameter Peak Repetitive Off-State Voltage (1) (- 40 to 125C, Sine Wave, 50 to 60 Hz, Gate Open) MAC16D MAC16M MAC...
Description 15 AMPERES RMS 400 thru 800 VOLTS
From old datasheet system

File Size 128.22K  /  8 Page

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    ON Semi
Part No. MAC16D ON0349
OCR Text ...Watt C C 2 3 4 TO-220AB CASE 221A STYLE 4 PIN ASSIGNMENT Main Terminal 1 Main Terminal 2 Gate Main Terminal 2 ORDERING INFORMATION...09 ISSUE Z -T- C T 4 SEATING PLANE S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y1...
Description 15 AMPERES RMS 400 thru 800 VOLTS
From old datasheet system

File Size 134.61K  /  8 Page

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    ONSEMI[ON Semiconductor]
Part No. MGP15N60U_D ON1858 MGP15N60U ON1857
OCR Text ...GE C G G C E E CASE 221a-09 STYLE 9 TO-220AB MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Gate Voltage (RGE = 1.0 M) Gate-Emitter Voltage -- Continuous Collector Current -- Con...
Description IGBT IN TO-220 15 A @ 90 26 A @ 25 600 VOLTS
From old datasheet system
Insulated Gate Bipolar Transistor

File Size 116.67K  /  5 Page

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    ONSEMI
Part No. MBR40250
OCR Text ...ficiency 1 3 4 TO-220AB CASE 221A T SUFFIX PLASTIC 1 3 1 2 3 TO-220 FULLPACK CASE 221D T SUFFIX PLASTIC 1 3 1 2 3 B40250x = Device Code x...09 ISSUE AA SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLL...
Description 40A 250V Schottky Rectifier

File Size 64.70K  /  6 Page

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    ONSEMI[ON Semiconductor]
Part No. MGP7N60E_D ON1878 MGP7N60E ON1875
OCR Text ...GE C G C G E E CASE 221a-09 STYLE 9 TO-220AB MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Gate Voltage (RGE = 1.0 M) Gate-Emitter Voltage -- Continuous Collector Current -- Con...
Description IGBT & DIODE IN TO-220 7.0 A @ 90 10 A @ 25 600 VOLTS
From old datasheet system
Insulated Gate Bipolar Transistor

File Size 114.34K  /  5 Page

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For 221a-09 Found Datasheets File :: 410    Search Time::1.016ms    
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