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  2-175mhz Datasheet PDF File

For 2-175mhz Found Datasheets File :: 408    Search Time::1.922ms    
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    M68702H 68702H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. M68702H 68702H
OCR Text ...sions in mm BLOCK DIAGRAM 2 3 1 4 5 2-R20.5 1 2 3 4 5 0.820.15 121 16.51 43.51 55.51 PIN: 1 Pin : RF INPUT 2 VCC1: 1...175MHz, ZG=ZL=50, VCC112.5V Ditto Ditto Ratings 17 20 600 75 -30 to +110 -40 to +110 Unit V...
Description 150-175MHz / 12.5V / 60W / FM MOBILE RADIO
From old datasheet system
RF POWER MODULE 150-175MHz, 12.5V, 60W, FM MOBILE RADIO

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    RA07M1317M RA07M1317M-01 RA07M1317M-E01

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. RA07M1317M RA07M1317M-01 RA07M1317M-E01
OCR Text 2 3 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly ...
Description 135-175MHz 6.5W 7.2V 2 Stage Amp. For PORTABLE RADIO
135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO
135-175MHz 6.5W 7.2V/ 2 Stage Amp. For PORTABLE RADIO
GIGATRUE 550 CAT6 PATCH 6 FT, NON BOOT, PURPLE

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    RA08H1317 RA08H1317M RA08H1317M-01 RA08H1317M-E01

Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric Sem...
Part No. RA08H1317 RA08H1317M RA08H1317M-01 RA08H1317M-E01
OCR Text ...BLE/MOBILE RADIO BLOCK DIAGRAM 2 3 DESCRIPTION The RA08H1317M is a 8-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radi...175MHz * Low-Power Control Current IGG=1mA (typ) at VGG=3.5V * Module Size: 30 x 10 x 5.4 mm * Linea...
Description TV 2C 2#16 SKT RECP 135 - 175MHz瓦特12.5V便携移动通信
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; Number of Contacts:2; Connector Shell Size:11; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO

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    RD07MVS2 RD07MVS211

Mitsubishi Electric Semiconductor
Part No. RD07MVS2 RD07MVS211
OCR Text 2 rohs compliance, silicon mosfet power transistor,175mhz,520mhz,7w description rd07mvs2 is a mos fet type transistor specifically designed for v hf /uhf rf po wer amplifiers applications. this device has a n internal monolithic zener diode...
Description RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W

File Size 443.38K  /  10 Page

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    RD07MVS1 RD07MVS111

Mitsubishi Electric Semiconductor
Part No. RD07MVS1 RD07MVS111
OCR Text 2+/-0.05 0 . 2 + / - 0 . 0 5 0 . 9 + / - 0 . 1 index mark (gate) 6.0+/-0.15 4 . 9 + / - 0 . 1 5 terminal no. 1.drain (output) 2.source (gnd)...175mhz,520mhz,7w description rd07mvs1 is a mos fet type transistor specifically designed for v hf /u...
Description RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W

File Size 422.30K  /  10 Page

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    RD07MVS1B RD07MVS1B10

Mitsubishi Electric Semiconductor
Part No. RD07MVS1B RD07MVS1B10
OCR Text ...precautions outline drawing 0.2+/-0.05 0.2+/-0.05 0.9+/-0.1 index mark (gate) 6.0+/-0.15 4.9+/-0.15 terminal no. 1.drain (output) 2...175mhz) high efficiency: 55%typ. (520mhz) application for output stage of high power amplifi...
Description RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W

File Size 205.51K  /  9 Page

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    RD07MVS1B11

Mitsubishi Electric Semiconductor
Part No. RD07MVS1B11
OCR Text 2+/-0.05 0 . 2 + / - 0 . 0 5 0 . 9 + / - 0 . 1 index mark (gate) 6.0+/-0.15 4 . 9 + / - 0 . 1 5 terminal no. 1.drain (output) 2.source (gnd)...175mhz,520mhz,7w description rd07mvs1b is a mos fet type transistor specifically designed for v hf /...
Description RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W

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    RD07MVS110

Mitsubishi Electric Semiconductor
Part No. RD07MVS110
OCR Text ...precautions outline drawing 0.2+/-0.05 0.2+/-0.05 0.9+/-0.1 index mark (gate) 6.0+/-0.15 4.9+/-0.15 terminal no. 1.drain (output) 2...175mhz) high efficiency: 55%typ. (520mhz) application for output stage of high power amplifi...
Description Silicon MOSFET Power Transistor,175MHz,520MHz,7W

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    ICST[Integrated Circuit Systems]
Part No. ICS843002I-40 ICS43002A40 ICS843002AKI-40 ICS843002AKI-40T
OCR Text ...JITTER ATTENUATOR FEATURES * (2) Differential LVPECL outputs * Selectable CLKx, nCLKx differential input pairs * CLKx, nCLKx pairs can acc...175MHz * FemtoClock VCO frequency range: 560MHz - 700MHz * RMS phase jitter @ 155.52MHz, using a 19....
Description 175MHZ, FEMTOCLOCKS-TM VCXO BASED SONET/SDH JITTER ATTENUATOR
175MHz, FemtoClock? VCXO Based SONET/SDH Jitter Attenuator

File Size 262.31K  /  21 Page

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    RA60H1317M RA60H1317M-101 RA60H1317M11

Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
Part No. RA60H1317M RA60H1317M-101 RA60H1317M11
OCR Text ...parts, and fluorescent tubes. 2.lead in electronic ceramic parts. ordering information: order number supply form ra60h1317m-101 ...175mhz 60w 12.5v, 3 stage amp. for mobile radio publication da te : oct.2011 2 maximum r...
Description RoHS Compliance , 135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO
Broadband Frequency Range

File Size 233.12K  /  9 Page

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For 2-175mhz Found Datasheets File :: 408    Search Time::1.922ms    
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